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  • 1
    Electronic Resource
    Electronic Resource
    High-precision band-gap determination of Al0.48In0.52As with optical and structural methods (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 140-141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap of Al0.48In0.52As lattice matched to InP is determined with high precision at 1.5 and 300 K as 1.511 and 1.439 eV, respectively. This determination, which resolves a long lasting dispute on the most fundamental material parameter of this semiconductor, is based on a comparative study of temperature-dependent photoluminescence, wavelength-dispersive x-ray analysis, and triple-crystal x-ray diffractometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102125
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 50-52 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simultaneous reduction of interface roughness and of impurity and trap incorporation in GaAs/AlGaAs quantum wells is observed for a decrease of the molecular beam epitaxy growth rate below its standard value 1 μm/h, down to 0.1 μm/h, at a substrate temperature of 620 °C. Thus, layer quality is drastically improved at low, nonstandard growth rates. Incorporation of impurities from the background is observed to induce a transition from two- to three-dimensional growth. The conclusions are based on a detailed study and line shape analysis of quantum well luminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101751
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Cap and capless annealing of Fe-implanted InGaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4825-4830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution of Fe implanted at medium (1–4×1014 cm−2) and low (2×1012 cm−2) doses into InGaAs and annealed with or without a cap is investigated and the degree of compensation of such implanted regions is assessed. Secondary ion mass spectrometry profiles of low dose implanted Fe reveal a substantial role of the capping layer. Fe concentrations below as well as above the estimated metal vacancy concentration produced by implantation are observed. The effect of the cap strongly depends on the wet chemical surface preparation before insulator deposition. A correlation of the magnitude of the Fe accumulation at the InGaAs surface with defect related photoluminescence intensity is established. On the basis of the substitutional-interstitial diffusion model the barrier effects of the various caps for host and dopant atoms are analyzed. The best semi-insulating properties were obtained for plasma enhanced chemical vapor deposition SiO2 caped samples using a H2SO4:H2O2:H2O=1:1:125 surface preparation before deposition resulting in a 53% incorporation of Fe. A high electrical activation is proved directly by capacity-voltage profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353797
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Study of radiative recombination efficiency in 28–180-Å-wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4152-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (ηi) on the GaAs quantum well width (Lz) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of ηi(approximately-greater-than)60% at room temperature have been obtained for quantum wells with Lz≥40 A(ring). It is shown that structures with Lz〈40 A(ring) exhibit a sharp decrease in ηi associated with nonradiative recombination of the high energy part of nonequilibrium carriers in the confining layers even in the presence of comparatively high potential barriers for Γ electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357002
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  • 5
    Electronic Resource
    Electronic Resource
    Enhancement of nonradiative interface recombination in GaAs coupled quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 434-438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination dynamics of GaAs multiple quantum wells as a function of barrier widths LB are studied in a semiconductor in the range between LB=0.87 nm (superlattice) and LB=18.1 nm (uncoupled wells) by means of cathodo- and photoluminescence. With decreasing LB the nonradiative recombination rate is found to be drastically enhanced, where-as the radiative recombination probability decreases. Thus a pronounced decrease of the quantum efficiency results. The controlled variation of the barrier width is found to be decisive for an unambiguous identification of the origin of the traps which are responsible for the nonradiative processes: Comparison with a theoretical calculation shows that they are localized at the heterointerfaces and not in the barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345220
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  • 6
    Electronic Resource
    Electronic Resource
    Correlation of time-resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier widths (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5561-5569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of a comparative study of the time-dependent luminescence properties of multiple quantum well structures with varying barrier widths which are embedded in the active area of a light-emitting device. The carrier kinetics is investigated by different experimental approaches: Cathodoluminescence and electroluminescence experiments where excitation is on/off-modulated for the purpose of time-resolved measurements and time-resolved electroluminescence experiments in the small signal regime which allow for observation of the carrier kinetics under flatband conditions. Due to the exact determination of the excess carrier density the latter technique provides a sensitive tool for a precise estimation of the mono- and bimolecular recombination coefficients. Comparison with light output data yields radiative and nonradiative parts. We find that coupling of quantum wells dramatically favors nonradiative interface recombination as expected from a theoretical model accounting for the superlattice wavefunctions. On the other hand, the bimolecular recombination rate remains unaltered even when the barrier width is lowered from 18 to 0.9 nm. In contrast, on/off modulated experiments reveal that luminescence decay is strongly influenced by carrier drift out of the active area. A barrier width dependent carrier mobility in growth direction accounts for these results if phonon assisted hopping rather than Bloch transport is presumed. Thus, an estimation of device quality of quantum well light emitters by conventional time-resolved cathodo- (or photo-) luminescence experiments is found to be possible if internal field induced carrier drift processes are taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350193
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  • 7
    Electronic Resource
    Electronic Resource
    First observation of a titanium midgap donor level in In0.53Ga0.47As p-n diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 645-647 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of Ti-doped In0.53Ga0.47As using liquid phase epitaxy is reported. The energy position of the Ti4+/Ti3+ deep donor level in In0.53Ga0.47As p-n diodes is precisely identified for the first time by deep level transient spectroscopy. The near midgap location of this level at EC−ET =0.37 eV and the potential of InGaAs:Ti of superior thermal stability make it a promising dopant for growing semi-insulating In0.53Ga0.47As. A recent model suggesting the energy positions of transition metals not to vary across heterojunctions is tested and found to be at least qualitatively valid for this low spin transition metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101810
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    Paper (German National Licenses)
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