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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 64 (1995), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The 27 amino acid peptide, pituitary adenylate cyclase-activating polypeptide (PACAP-27), and its 38 amino acid analogue, PACAP-38, stimulate serotonin-N-acetyltransferase (NAT) activity and N-acetylserotonin (NAS) and melatonin content of pineal glands from adult rats. Maximal stimulation of rat pineal NAT by PACAP-38 is not increased further significantly by concurrent stimulation with the two related peptides, vasoactive intestinal polypeptide (VIP) and/or peptide N-terminal histidine C-terminal isoleucine (PHI). Isoproterenol was a more potent inducer of NAT activity than any of these peptides alone or in combination. PACAP-38 also stimulates melatonin production by chicken pineal cells in culture as does VIP. Stimulation by both was not greater than after either alone. Prior stimulation of rat pineal NAT activity with VIP, PHI, or PACAP-38 reduces the magnitude of subsequent stimulation with PACAP-38 or forskolin. Concurrent stimulation of α-receptors or treatment with active phorbol ester augments rat pineal response to PACAP-38 stimulation just as it increases the response to VIP, PHI, and β-receptor stimulation. Pineals from newborn rats respond to PACAP-38 with an increase in NAT activity and the increase is augmented by concomitant α1-adrenergic stimulation. The putative PACAP inhibitor PACAP (6–38) and the putative VIP inhibitor (Ac-Tyr,d-Phe)-GRF 1–29 amide, in 100–1,000-fold excess, did not affect the stimulatory activity of any of the peptides. Pineal melatonin concentration parallels changes in pineal NAT activity.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7793-7797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent optical absorption of cerium-doped gadolinium oxyorthosilicate (Gd2SiO5:Ce) has been measured and analyzed for impurity-ion-lattice coupling parameters and oscillator strengths. Although the spectrum consists of overlapping Ce3+ bands and Gd3+ lines, two well-resolved Ce3+ bands with 10 K maxima at 3.32 eV (peak a) and 3.61 eV (peak b) are amenable to spectral analysis. These bands, previously assigned to Ce3+ ions occupying crystallographically inequivalent substitutional sites, are characterized by Gaussian line shapes and temperature-dependent half widths that are well described by the linear model of impurity-ion-lattice coupling. Huang–Rhys [Proc. R. Soc. A 204, 404 (1950)] parameters of peaks a and b are 22.7 and 5.7, respectively, indicating strong ion-lattice coupling, with vibrational frequencies 1.83×1013 s−1 (peak a) and 5.07×1013 s−1 (peak b). Peak b centroid is approximately temperature independent, but peak a centroid shifts to higher energy with increasing temperature. This dependence is adequately described by including higher-order coupling terms in the ion-lattice interaction, although crystal-field contributions cannot be excluded. Absorption band oscillator strengths, f, are calculated from Smakula's [Z. Phys. 59, 603 (1930)] formula and knowledge of cerium concentration for the two inequivalent sites. In the interval 10–300 K, peak a f values range from (9.8 to 26.8)×10−4 and peak b f values vary from (7.8 to 5.8)×10−3. From the known correlation between oscillator strength and metal-ion-ligand separation, we identify peaks a and b as the seven- and nine-oxygen-coordinated sites, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7360-7362 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski growth of cerium-doped Lu1.8Y0.2SiO5 (LYSO) from a 90/10 solution of Lu2SiO5 (LSO) and Y2SiO5 (YSO) is demonstrated. The alloyed scintillator retains the favorable growth properties of YSO and the desirable physical and optical scintillator properties of LSO. Radioluminescence, thermally stimulated luminescence, optical absorption, and lifetime measurements confirm the equivalence of LYSO and LSO optical properties. Advantages of LYSO Czochralski growth relative to LSO include reduced melting point, less propensity for formation of crystalline inclusions, lower cost of starting material, and easier incorporation of cerium into the host lattice. This material offers an attractive alternative to LSO for scintillator applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5308-5310 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Similarity among the thermally stimulated luminescence glow curves of undoped Lu2SiO5 and Ce3+-doped oxyorthosilicates possessing the monoclinic C2/c structure strongly suggests the luminescence traps are intrinsic in origin. They are most likely associated with the configuration of oxygen ions in the vicinity of not only the Ce3+ ion, as suggested in previous work, but also the host lanthanide ion. The optical absorption spectrum of pristine Lu2SiO5 shows the presence of intrinsic absorption centers that are enhanced upon x irradiation as seen in other oxides containing oxygen related point defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of hydrogen loss and luminescence as a function of annealing temperature in porous silicon suggest that luminescence is attributable to electron-hole recombination in SiOx surface layers with an intensity that is dependent upon the surface hydrogen content. The luminescence is composed of three Gaussian bands similar to those found in amorphous SiO2. X-ray photoelectron spectroscopy and scanning electron microscopy show porous silicon has SiOx on the surface, which is comprised of many particles of about 10 nm size. Collectively, the data strongly support the previously proposed quantum confinement/luminescence center model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tl-based superconducting thick films deposited on large-area (11.4 cm2) Ag alloy (Consil 995) substrates have been characterized by surface resistance measurements yielding values of 4 and 14 mΩ at 4 and 77 K, respectively, as measured in an 18 GHz Cu cavity; corresponding Cu values are 8 and 21 mΩ. Utilizing a Nb cavity, the dependence of surface resistance on microwave power was also measured. The surface resistance begins to rise in microwave magnetic fields of 1–10 Oe and saturates in 20–60 Oe, the exact values depending on the degree of c-axis texturing of the polycrystalline films. Enhanced texturing sharpens the high-frequency transition into the superconducting state and also weakens the dependence of surface resistance on microwave magnetic field. These results are significant for high temperature superconductor applications such as microwave cavities.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase by over three orders of magnitude from 0.58 mΩ to 1.17 Ω was observed at 4.0 K in the 3 GHz microwave surface resistance of ceramic YBa2Cu3O7−δ following exposure to neutrons. The transport resistivity of an unirradiated pellet was linear in temperature down to Tc with a room-temperature value of 2.13 mΩ cm and a resistivity extrapolated to 4.0 K of 0.53 mΩ cm. Following irradiation, the resistivity rose with decreasing temperature from a room-temperature value of 1.5 Ω cm to a maximum at around 45 K with little change evident at Tc . These results, in conjunction with eddy current, susceptibility, iodometric titration, and thermally stimulated luminescence measurements on irradiated and unirradiated samples, collectively suggest that the effect of neutron irradiation has been to decrease intergranular coupling without the development of an insulating phase.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3594-3596 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured thermally stimulated luminescence from light-emitting porous silicon that has been x irradiated at room temperature and heated to 400 °C. The glow curve exhibits peaks at 103, 155, 219, and 271 °C, with additional maxima occurring above 400 °C. Each of the peaks emits similar emission spectra characterized by a band with a maximum near 720 nm and 0.39 eV full width at half-maximum. Following x irradiation at room temperature, the sample exhibits well-known photoluminescence, but after heating to 400 °C, the loss of hydrogen renders the sample nonphotoluminescent. However, thermally stimulated luminescence can be repeatedly induced. Observation of thermally stimulated luminescence is unambiguous evidence for the existence of an insulating surface layer on porous silicon. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1338-1340 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed optical scintillations and corresponding electric current pulses when uniformly heating potassium titanyl phosphate (KTP) crystals at 0.1–0.4 K/s over the temperature range 8–300 K. The scintillations correspond to molecular nitrogen emission occurring during the electrical breakdown of air near the crystal surface, and imply the existence of pyroelectrically induced peak electric fields at the crystal surface exceeding 30 kV/cm, which is ten times larger than dc electric fields reported to induce electrochromic (EC) damage in this material. Recent optical damage studies on KTP under high repetition rate, high average-power laser irradiation reveal an EC-like damage, implying the existence of an internal electric field arising during laser irradiation. Our observation of a sizable total pyroelectric response suggests one possible mechanism for the origin of these internal fields in KTP and other nonlinear optical materials. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1572-9605
    Keywords: High-temperature superconductivity ; microwave surface impedance ; Tl-based superconducting films ; metallic substrates ; field dependence of surface resistance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Microwave surface resistance (R s ) measurements on large-area (11.4 cm2) Tl-based films deposited onto Ag (Consil 995) substrates have been made at a frequency of 18 GHz as a function of temperature. Deposition onto unoriented Ag substrates yields unoriented films characterized byR s values of 8.2 and 33.6 mΩ at 10.6 and 77 K, respectively. In contrast, similar deposition onto oriented Ag substrates yields oriented films with values of 12.6 and 14.6 mΩ at 11.2 and 77 K, respectively; corresponding Cu values are 9 and 21 mΩ. Additionally, it is found that the dependence ofR s on microwave surface magnetic fieldH s is weaker for the oriented films. These results suggest that the effect of orienting thec-axis in Tl films is twofold: (1) the high-frequency superconducting transition is made considerably sharper, resulting in a lowerR s value at 77 K, and (2) the rate of increase inR s with appliedH s is reduced. Both effects have significant ramifications for the potential application of these materials to high-frequency accelerating cavities.
    Type of Medium: Electronic Resource
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