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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1516-1518 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Is silicon dioxide a viscous liquid or an elastic solid at silicon processing temperatures? Simple calculations using either assumption lead to gross discrepancies with experimental observations. This letter shows that a plastic flow model resolves these discrepancies. Flow develops much sooner than predicted by a linear viscoelastic model. Large deformations (〈5%) are accommodated almost entirely by plastic flow. Small deformations are accommodated either elastically or by plastic flow depending on temperature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 34-36 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A defect generation mechanism, namely, the grain-boundary Frenkel pair model, and corresponding diffusion mechanisms during electromigration are developed using atomic simulation techniques in Al and Al–Cu. We contend that large numbers of interstitials and vacancies exist at grain boundaries and both contribute to mass transport. Cu preferentially segregates to the interstitial sites at grain boundaries via a Frenkel pair generation process and reduces the overall grain-boundary diffusivity due to the stronger Al–Cu binding. Predictions from our models are in excellent agreement with available experimental data and observations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 885-887 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ab initio calculations were performed to investigate adsorption and diffusion of C on the Si(001) surface at different surface and subsurface sites. Incorporation mechanisms of both substitutional and interstitial C during film deposition and growth were proposed. A surface diffusion process resulting in interstitial C incorporation was identified and the calculated energy barrier of ∼1.0 eV is consistent with the experimental value of 0.94±0.04 eV. The results support experimental observations of several groups: higher growth rates and lower temperatures favor the substitutional C incorporation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1434-601X
    Keywords: 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Nuclear resonant reaction analysis techniques for hydrogen depth profiling in solid materials typically have used15N ion beams at 6.40 MeV and19F ion beams at 6.42 MeV, which require a tandem accelerator. We report a new technique using an18O ion beam at a resonance energy of 2.70 MeV, which requires only a single stage accelerator. Improved values of the nuclear parameters for the 2.70 MeV (18O) and 6.40 MeV (15N) resonances are reported. The beam energy spread was investigated for different ions and ion charge states and found to scale with the charge state. Data obtained using atomic and molecular gas targets reveal the research potential of Doppler spectroscopy. Examples of hydrogen depth profiling in solid materials using15N and18O ion beams are presented.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: An excitation function of the 19F(p, αγ)16O reaction has been measured over the proton beam energy range Ep= 200–800 keV using a 4 π NaI summing spectrometer. A new resonance was found at ER= 237 keV and its properties ΓR, σR and ωγ have been extracted. The strengths of all resonances at Ep= 200–800 keV have been also extracted. The importance of the 1+ resonance at ER= 11 keV is discussed and its width has been estimated taking into account interference effects with the strong 1+ resonance at ER= 340 keV. The reaction rates have been calculated over a wide range of temperatures and compared with the rates of the (p, α0) and (p, απ) branches of the 19F(p, α)16O reaction.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 5 (1999), S. 327-336 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The energy spread of atomic and molecular ion beams from the 4 MV Dynamitron tandem accelerator at the Ruhr-Universität Bochum has been studied and in part minimized. Using the ER= 6.40 MeV narrow resonance in 1H(15N,αγ)12C with an 15N energy spread of 4.55 keV, the Doppler broadening for several hydrogen-bearing gases was found to be in good agreement with expectation: e.g. for NH3 gas a rotational-vibrational Doppler width of 10.41 ± 0.25 keV was observed (theory = 10.4 keV). Studies of the vibrational Doppler widths of H-bonds on a Si 〈100〉 surface were performed using a 4πγ-ray detection system together with UHV-chambers for sample preparation, transport, and analysis. The results showed that further improvements in the experimental set-ups are needed for such investigations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 456-463 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Depth profiling has been performed by using X-ray photoelectron spectrometry (XPS) in combination with Ar-ion sputtering, Rutherford backscattering spectrometry (RBS) and glow discharge optical emission spectrometry (GDOES). The data obtained by XPS have been subjected to factor analysis in order to determine the compositional layering of the copper oxides. This leads to two or three relevant components within the oxide layers consisting of Cu2O or CuO dependent on the sample preparation. GDOES measurements show sputtering profiles which are seriously influenced by a varying sputter rate. To ensure the results obtained so far, RBS measurements of the oxide layers have been carried out in order to discover artefacts of the other methods used and to demonstrate the excellent suitability of RBS for quantitative analysis of these layers. Chemical analysis consisting of (1) carrier-gas fusion analysis (CGFA) and (2) selective dissolution of Cu2O/CuO allows the determination of the total amount of oxygen and copper, respectively, and can serve as a cornerstone of quantitative analysis.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 456-463 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Depth profiling has been performed by using X-ray photoelectron spectrometry (XPS) in combination with Ar-ion sputtering, Rutherford backscattering spectrometry (RBS) and glow discharge optical emission spectrometry (GDOES). The data obtained by XPS have been subjected to factor analysis in order to determine the compositional layering of the copper oxides. This leads to two or three relevant components within the oxide layers consisting of Cu2O or CuO dependent on the sample preparation. GDOES measurements show sputtering profiles which are seriously influenced by a varying sputter rate. To ensure the results obtained so far, RBS measurements of the oxide layers have been carried out in order to discover artefacts of the other methods used and to demonstrate the excellent suitability of RBS for quantitative analysis of these layers. Chemical analysis consisting of (1) carrier-gas fusion analysis (CGFA) and (2) selective dissolution of Cu2O/CuO allows the determination of the total amount of oxygen and copper, respectively, and can serve as a cornerstone of quantitative analysis.
    Type of Medium: Electronic Resource
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