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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 517-517 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 503-504 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The vortex state, characterized by a curling magnetization, is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of micrometre size and below. The interplay between the magnetostatic and the exchange energy ...
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 362-367 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of electrons in Co/Cu multilayered thin films are of special interest for the giant magnetoresistance (GMR) of this system. The magnitude of this effect depends on the mean free paths and on the strength of the interface scattering which in turn are strongly related to film structure. In this article, we discuss the results of resistance and magnetoresistance measurements carried out during film growth. We characterize the electronic transport parameters of these films and the growth mechanism of the layers. The new technique of the in situ measurement of the magnetoresistance furthermore provides a tool to find correlations of the growth mechanism with the dependence of the GMR on the Co thickness.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 523-525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, the application of scanning tunneling microscopy (STM) for a quantitative evaluation of roughnesses and mean island sizes of polycrystalline thin films is discussed. Provided strong conditions concerning the resolution are satisfied, the results are in good agreement with standard techniques as, for example, transmission electron microscopy. Owing to its high resolution, STM can supply a better characterization of surfaces than established methods, especially concerning the roughness. Microscopic interpretations of surface dependent physical properties thus can be considerably improved by a quantitative analysis of STM images.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 586-589 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and dielectric stability of magnetic tunnel junctions are important requirements for magnetic memory devices and their integration in the semiconductor process technology. We have investigated the changes of the tunneling magnetoresistance (TMR), the barrier properties (height, thickness, and asymmetry) and the dielectric stability upon isochronal annealing up to 410 °C in Co/Al2O3/Co junctions with an artificial antiferromagnet as a pinning layer. Besides a small decrease of the TMR signal after annealing up to 230 °C, a strong decrease between 300 and 350 °C is found. According to Auger and transmission electron microscopy investigations, this decrease is mainly due to interdiffusion of the metallic layers. The dielectric breakdown is characterized by voltage ramp experiments. The size-averaged breakdown voltage improves from 1.35 V for the as prepared junctions to 1.55 V by annealing at 300 °C. At higher temperatures the breakdown voltage decreases strongly to 0.8 V (at 380 °C). Simultaneously, the typical breakdown process changes from few sudden current jumps to a large number of small steps. The breakdown properties are discussed within a statistical model and related to structural changes of the barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5191-5193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature stability of magnetic tunnel junctions is an important requirement for the fabrication of magnetic memory devices and the integration in the semiconductor process technology. We have investigated the temperature evolution of the tunneling magnetoresistance (TMR) and the structural properties by isochronal annealing experiments up to 750 K. The magnetically hard electrode of the junction consists of an artificial antiferromagnet Co/Cu/Co, the soft electrode of a Co/Fe bilayer. The tunnel barriers are formed by plasma oxidized Al. The tunnel junctions have TMR signals up to 22% at room temperature. Besides a small increase of the TMR signal after annealing up to 480 K, a first decrease at 530 K and a breakdown beyond 600 K are found. This behavior can be attributed to structural changes of the junctions. Auger depth profiles show an unaltered Al2O3 barrier up to 600 K, but the beginning of interdiffusion processes within the magnetic electrodes already at 540 K and above. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3456-3458 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Avoiding fatigue in the switching of magnetic tunnel junctions is crucial for their long-term use in nonvolatile magnetic memories. We compare the switching stability of two types of junctions with different soft layers: Fe or Ni81Fe19, both with Co dusting at the barrier interface. The magnetically hard electrode is a Co/Cu/Co artificial antiferromagnet. While the tunneling magnetoresistance (TMR) remains unchanged after 104 cycles in a 4 kA/m rotating field, it decreases by more than 45% due to uniaxial switching. Fringing fields of domain walls in the soft layer and an intrinsic instability of Co/Cu/Co are identified as the main reasons. Magnetization reversal by two perpendicular switching pulses avoids this magnetic degradation and maintains a full TMR signal. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1113-1115 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic tunnel junctions usually consist of different layer stacks at the two sides of the tunneling barrier. The exposure of these junctions to high temperatures thus can induce large asymmetries in the electronic potential with respect to the barrier. Using the example of Co/Cu/Co/Al2O3/Co tunnel junctions, we show that the measured current/voltage characteristics develop a large asymmetry upon annealing at a temperature larger than 230 °C. This is accompanied by a Cu enrichment at one side of the barrier and cannot be explained by simply using the work function differences between the electrode materials. Thus, a Cu–Al2O3 intermixing zone at the barrier interface must be taken into account, which leads to an asymmetric step-like barrier shape. The interpretation is supported by numerical evaluation of model barriers which reproduce the experimental asymmetries if an intermixing zone of only 0.2 nm thickness is assumed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5255-5258 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resist patterning by scanning probe microscopy is a promising method to create structures in the nanometer range beyond the resolution of conventional electron beam or photo lithography. In conventional resist processing one has to remove either the exposed or unexposed resist in a solvent by an additional step. In this article we demonstrate the possibility of directly writing nano-scaled patterns in a thin amorphous carbon layer, which can be used as an etching mask, by a scanning force microscope. Above a threshold voltage between tip and sample small trenches can be created, whereby the carbon is completely removed from the exposed areas. Evidence is given that the mechanism responsible for the trench formation is a local field-induced oxidation of the carbon layer underneath the tip. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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