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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis, crystal growth and characterisation edited by K. Lal (1984)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 40 (1984), S. 726-726 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767384001549
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  • 2
    Electronic Resource
    Electronic Resource
    Pressure Temperature Projection of the Three-phase Line of the Gallium Antimony System (1963)
    [s.l.] : Nature Publishing Group
    Nature 199 (1963), S. 897-898 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The interest shown in the semiconducting properties of gallium antimonide* makes it desirable to grow stoichio-metric single crystals. Crystals so far produced have, however, contained large numbers of electrically active impurities4. Since most workers grow their crystals with conditions such ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/199897b0
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  • 3
    Electronic Resource
    Electronic Resource
    Indium Mono-Telluride (1959)
    [s.l.] : Nature Publishing Group
    Nature 183 (1959), S. 27-28 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SOME preliminary work has been carried out on the mono-telluride of indium. This revealed some anomalous properties of the compound, which is variously reported as semiconducting1 and metallic2. The compound was prepared by direct fusion of stoichio-metric amounts of the elements in sealed ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/183027a0
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  • 4
    Electronic Resource
    Electronic Resource
    DMILL (Durci Mixte sur Isolant Logico-Lineaire) A mixed analog-digital radiation hard technology for high energy physics electronics
    Amsterdam : Elsevier
    Nuclear Physics B (Proceedings Supplements) 32 (1993), S. 530-534 
    Details
    ISSN: 0920-5632
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0920-5632(93)90067-G
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  • 5
    Electronic Resource
    Electronic Resource
    Fundamentals of crystal growth 1 by F. Rosenberger (1980)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 13 (1980), S. 401-402 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889880012435
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  • 6
    Electronic Resource
    Electronic Resource
    Hysteresis and Grain Size Effects in the Superconducting Phase Transition (1965)
    [s.l.] : Nature Publishing Group
    Nature 205 (1965), S. 1096-1096 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1. The resistance of a superconductor as a function of temperature or magnetic field for various values of grain size w If the change of surface free energy at the cell boundary on converting the cell from normal to superconducting is less than the free energy per unit area of a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/2051096a0
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of Arsenic Pressure on Dislocation Densities in Melt-grown Gallium Arsenide (1966)
    [s.l.] : Nature Publishing Group
    Nature 209 (1966), S. 1346-1346 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1. Dislocation density as a function of arsenic pressure. Each point is the mean of five observations The results obtained are shown in Fig. 1 and suggest that vacancy condensation to form dislocation loops3,4 is probably one mechanism responsible for the introduction of dislocations into ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/2091346a0
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  • 8
    Electronic Resource
    Electronic Resource
    Easy direction coercive force associated with domain wall motion in nickel-iron films (1966)
    Springer
    Journal of materials science 1 (1966), S. 170-185 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The origin of domain coercive force in thin nickel-iron films is of considerable scientific and technological interest. Three principal causes of domain coercive force have been suggested. These are surface roughness, inclusions, and the presence of magnetisation ripple in the films. The current theories of these contributions are outlined, and the results obtained experimentally are compared with those expected theoretically. On the basis of this comparison, it appears that all three contributions can be important. However, it is not clear how the components due to the various causes should be combined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00550105
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  • 9
    Electronic Resource
    Electronic Resource
    The lattice constants of a-quartz (1980)
    Springer
    Journal of materials science 15 (1980), S. 161-167 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Data relating to the lattice constants of quartz are reviewed and it is shown that hydrogen and most other impurities increase the a lattice constant and decrease the axial ratio c/a. The available data can be described by c/a=1.10013−0.20 (a−a 0) where a 0 is the lattice constant of the pure material. The values of a 0 at 25° C are deduced to be 4.9127 and 4.9134 Å, respectively, for natural and synthetic quartz with uncertainties in the last figure of about 1. This difference cannot be attributed to the large hydrogen content of the synthetic quartz since it is shown that this has a negligible effect on a. Neither is it due to differences of growth mechanism since crystals of synthetic quartz grown on different faces behave identically. Thus the differences between natural and synthetic quartz must be attributed to differences in the growth conditions (temperature, pressure and mineralizer). This attribution can account for the spread of natural quartz data. Values of the cell parameters are suggested which allow interplanar and Bragg angles to be calculated with uncertainties of between 0.001 and 0.003°. Thus for decreasingly pure grades of quartz, natural quartz has a rising from 4.9129 to 4.9138 Å associated with a fall of c/a from 1.10012 to 1.10004. Uncertainties in the a values range from 2×10−4 to 5×10−4 Å and uncertainties in the c/a ratio range from 4×10−5 to 12×10−5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00552441
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  • 10
    Electronic Resource
    Electronic Resource
    Mass spectrometric studies of impurities in gallium arsenide crystals (1967)
    Springer
    Journal of materials science 2 (1967), S. 131-138 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Techniques for the investigation of impurities in gallium arsenide crystals using mass spectrometry are described. The results obtained show a fair correlation with electrical measurements. Flat-bottomed etch pits are found which can be correlated with the oxygen content. The use of silica, boron nitride, alumina, and vitreous carbon crucibles is shown to contaminate the crystals. For crystals grown from silica crucibles, the silicon content decreases rapidly with increasing arsenic pressure during growth. From the distribution of impurities along the lengths of crystals, a number of distribution coefficients have been estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00549572
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