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  • 1
    Electronic Resource
    Electronic Resource
    Range distributions of 11B+ in Co, CoSi2, Ti, and TiSi2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 607-609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range distributions of 10–120 keV 11B+ in polycrystalline Co, Ti, CoSi2, and TiSi2 targets have been measured by secondary ion mass spectrometry. The obtained projected ranges Rp and projected range stragglings ΔRp are within 25% and 10%, respectively, of those predicted using the Monte Carlo computer program trim. By comparison the one-dimensional Boltzmann transport calculation in suprem-3 tends to overestimate Rp by as much as 300% at the highest ion energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341949
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The high-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6721-6726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rapid thermal anneal (RTA) in an NH3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 °C in NH3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 °C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi2 phase. In contrast, after a prior 900 °C RTA in NH3, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 °C NH3 anneal. The NH3-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 °C, at which point some increase in contact resistance was measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342003
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Formation and high-temperature stability of CoSix films on an SiO2 substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6265-6268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin α-Co layer with an amorphous Si underlayer has been sputter deposited onto a thermal SiO2 substrate, rapid thermal annealed in N2 at 700–1050 °C, and the phases formed examined using Auger electron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A CoSix film results where x is constant with depth and determined by the relative amounts of Co and Si deposited. With increasing x, phases identified are α- and β-Co containing dissolved Si, Co2Si, CoSi, and CoSi2. At high temperatures, the CoSi2 film agglomerates and thins the underlying oxide probably on account of excess Si in the silicide film. Furthermore, in an N2 atmosphere, the CoSi2 globules are converted into CoSi in accordance with the phase diagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345142
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  • 4
    Electronic Resource
    Electronic Resource
    Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 344-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ti films sputter deposited onto single-crystal Si, thermal SiO2, and low-pressure chemical vapor deposited Si3N4 and SiOxNy (x≈y≈1) substrates have been rapid thermal annealed in N2 or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSix, TiOx, δ-TiN, or TiNxO1−x. The results are discussed in light of published Ti-Si-O and Ti-Si-N phase diagrams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341434
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of post-silicidation annealing on TiSi2/p+-n Si junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1882-1886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-bias leakage of TiSi2/p+-n Si junctions is 〈10 nA/cm2 for 0.1-μm-deep p+-Si with a TiSi2 sheet resistance of 1.7 Ω/sq, and is essentially independent of carrier concentration, and the amount of B consumed during silicidation. Forward-bias current characteristics show that the TiSi2 contacts are ohmic with significant recombination currents and high-level injection at voltages below the series resistance limit. Post-silicidation annealing for 30 min at 920 °C, with or without an overlayer of borophosphosilicate glass, increases the majority-carrier concentration and does not cause B to diffuse out of the Si. Also, minority-carrier lifetimes show a twofold increase after annealing and this results in nearly ideal junctions with leakage that is dominated by diffusion currents. Thus, TiSi2/p+-n Si is thermally stable under conditions that are compatible with glass flow and reflow processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339573
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    Paper (German National Licenses)
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