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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Technology 12 (1981), S. 327-339 
    ISSN: 0376-4583
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Technology 24 (1985), S. 173-190 
    ISSN: 0376-4583
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3229-3232 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3967-3970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently we reported that phosphorescent light emission was observed upon irradiation of WF6/H2/noble gas (Ar, Kr, Ne, Xe) mixtures by ArF excimer laser [P. Heszler, P. Mogyorósi, and J.-O. Carlsson, J. Appl. Phys. 78, 5277 1995], originating from tungsten nanoparticles. In this work results of additional measurements on the same system are presented, and we conclude that the reported phosphorescence is a blackbody-like radiation. Taking into account the emissivity of the particles calculated on the base of the Mie theory, it was possible to determine the dependence of the temperature of the tungsten nanoparticles on time after the laser pulse by means of time-resolved spectroscopy. It is shown that surface reactions on the hot nanoparticles contribute significantly to the growth. The size distribution was found lognormal by transmission electron microscopy measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2476-2478 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown for the first time that the superconducting YBa2Cu3O7−x phase can be deposited by chemical vapor deposition using the halide precursors YCl3, BaI2, and CuCl as metal sources and an O2/H2O gas mixture. Sintered calcium stabilized zirconia plates were used as substrates. The superconductor was obtained upon deposition without the need for post-annealing. An ideal (001) texture was always found to prevail.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7248-7255 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stages of diamond growth on nickel have been studied by in situ electron-excited soft x-ray emission spectroscopy. The study has been able to clarify that the codeposition of ordered graphite at the substrate/film interface is due to carbon precipitation during the cooling-down period after the deposition. The possibility to follow a deposition process from the initial stages to the end with soft x-ray emission spectroscopy is also demonstrated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 12781-12785 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 5019-5023 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 10440-10445 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Continuous, black-body-type light emission is observed upon irradiation of gas phase C60 and C70 by 193 nm ArF excimer laser at fluences from 3 to 80 mJ/cm2 in Ar and He ambient. Cluster temperatures are estimated by calibrating the detection system against a tungsten filament and applying Wien's displacement law. Time-resolved spectroscopic measurements show that the initial internal temperature of the irradiated fullerenes (around 2800 K) decreases linearly, while the emitted light intensity decreases exponentially with time, respectively. Excited C60 and C70 molecules are predominantly cooled via inelastic collisions with noble gas atoms above ∼0.5 mbar ambient pressure and below ∼2800 K temperature. The quenching rates are ∼7.1 bar−1 s−1 for C60, and ∼6.4 bar−1 s−1 for C70 in Ar, and 81 bar−1 s−1 for C60 in He ambient, respectively, determined from Stern–Vollmer type relations. The inelastic quenching cross section for He gas (∼4.4×10−23 cm2) is ∼3.7 times higher than for Ar. This observation may provide further insight on the mechanisms of fullerene synthesis by coalescence of hot carbon vapor in a noble gas atmosphere. At laser fluence above 30–40 mJ/cm2 the fullerene temperature saturates at ∼2800 K, indicating a kind of phase-transition—"boiling" of the excited fullerenes. The cluster temperature stabilizes by other cooling mechanisms like electron and/or C2 "evaporation" (i.e., ionization and/or fragmentation). The unperturbed (i.e., extrapolated to zero ambient pressure) lifetime of the temperature-stabilized species is 100±25 μs for C60 and 44±4 μs for C70, respectively, at high (80 mJ/cm2) laser fluences. The measured two- and three-photon multiplicities of the excitation at low laser fluences (〈15 mJ/cm2) are in good agreement with the observed cluster temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5277-5282 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorescent light emission was investigated upon irradiation of WF6/H2/noble gas (Ar, Kr, Ne, Xe) mixtures by ArF excimer laser. The continuous, broadband phosphorescence emission originates from excited tungsten clusters. The phosphorescence ceased with increased Xe and H2 concentrations. Xe inhibits the formation of tungsten clusters and H2 quenches the phosphorescence. The H2 quenching rate and the unperturbed phosphorescence lifetime were determined to be 2.8×104 mbar−1 s−1 and 23 μs, respectively. The intensity dependence of phosphorescence on the WF6 partial pressure shows a rising part, then a declining part, and finally an increasing part again. It was shown that the declining part can be interpreted by scattering of the emitted phosphorescence. The phosphorescence intensity was dependent on the noble gas/H2 concentration ratio. This effect was explained in terms of the thermal conductivity of the WF6/H2/noble gas mixture, which influences the lifetime of the activated subfluorides and, thus, the cluster formation and growth rate. The intensity of the laser beam had a nonlinear effect on the phosphorescent light intensity due to the nonlinearly coupled photolytical steps of WF6 and of the subfluorides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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