Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1432-1084
    Keywords: Key words: Lung cancer ; Bronchioloalveolar carcinoma ; Radiolucencies ; Computed tomography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. Bronchioloalveolar carcinoma (BAC) is a polymorphic lung cancer the incidence of which is rising. The presence of intratumoral radiolucencies is an important feature of bronchioloalveolar carcinoma.The aim of this study was to present pictorially the spectrum of intratumoral radiolucencies visible in BAC. In 57 BACs studied with thin-slice CT, we identified six types of radiolucencies: (a) patent intratumoral bronchioles (air bronchiologram); (b) pseudocavitations; (c) cavitation; (d) serpentine radiolucencies; (e) internal alveologram; and (f) multiple cystic lesions.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Acta neurochirurgica 54 (1980), S. 271-281 
    ISSN: 0942-0940
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The AA report their experience of 8 cases of epidermoids of the cerebellopontine angle (cpa). In analyzing the various clinical, radiological and operating aspects and the results they emphasize the diagnostic pre-operative value of CT scan.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Acta neurochirurgica 132 (1995), S. 75-78 
    ISSN: 0942-0940
    Keywords: Arachnoid cyst ; fenestration ; surgical treatment ; outcome
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The authors report 46 cases of primary supratentorial arachnoid cysts. Thirty-two patients presented with symptomatic arachnoid cysts, which act as space-occupying lesions and were surgically treated by fenestration. 14 patients presented with a scarsity of symptoms; for this reason they were kept under control by periodical neuroradiological examination. After a long follow-up period (median 11 years), 97% of the operated patients presented neurological improvement and a decrease in the size of the cyst; none of the patients who were not operated on showed any variation in either neurological status or size of the cyst. The authors discuss their findings in the light of the published papers.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Acta neurochirurgica 55 (1981), S. 329-341 
    ISSN: 0942-0940
    Keywords: Spinal neurinomas and meningiomas ; children ; review of the literature
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The literature on spinal neurinomas (N) and meningiomas (M) in children is reviewed, and five personal cases of N are added (one in the context of Recklinghausen's disease). The cases of N totalled 151, and of M 69, accounting respectively for 10.9% and 4.3% of childhood spinal tumours and 2.6% and 1.3% of spinal N and M of all ages. Sixty-one cases of N (16 in the context of Recklinghausen's disease) and 26 cases of M (5 in the context of Recklinghausen's disease) are analyzed in detail. N occurs chiefly between ages 9 and 15 years, the sex ratio is 3 ∶ 2, all levels of the spinal canal are equally affected, and extradural N or conditions with an extradural component (48%) are more frequent than in adults (26.9%). M occurs chiefly between 12 and 15 years, the sex ratio is 3 ∶ 2, the prevalence of the thoracic segment (47.8%) is less marked than in adults (81%), and the frequency of the extradural site (10.6%) is close to the sum of the extradural and dumb-bell lesions in adults (11.1%). In children vertebral signs,i.e., spinal rigidity and tenderness, and spasm of paravertebral muscles, are more intense, earlier, and more frequent than in adults, and the clinical history is shorter. The chances of recovery from neurological deficits are greater, as are those of malignant degeneration.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 0942-0940
    Keywords: Posterior fossa surgery ; sitting position ; tension pneumocephalus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Thirty patients subjected to posterior fossa surgery in the sitting position were evaluated postoperatively by CT scans in order to assess the true incidence of pneumocephalus and subsequent development, if any, of tension pneumocephalus. This prospective survey shows that the postoperative incidence of intracranial air was 100%, while no progression towards tension pneumocephalus producing severe neurological deterioration was observed. It can thus be claimed that, although the sitting position may favour the development of tension pneumocephalus also other factors contribute to its pathogenesis. Finally, neither nitrous oxide nor temperature play any significant role in the development of this complication.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 33 (1972), S. 689-695 
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    ISSN: 0888-7543
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1750-1752 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent advances in heterostructure bipolar transistor technology have created a need for p-type doping at levels ≥1020 cm−3. Furthermore, such levels may eliminate the need for alloying during ohmic contact formation. We have achieved p-type doping levels as high as 5×1020 cm−3 using an unconventional dopant, C, derived from the gaseous source chemical, trimethylgallium (TMG), during metalorganic molecular beam epitaxial (MOMBE) growth of GaAs. We have controllably achieved doping levels between 1019 and 5×1020 cm−3 by diluting the TMG flow with another metalorganic, triethylgallium (TEG). By utilizing the so-called δ-doping or atomic planar doping method we have also been able to grow C-doped spikes with hole concentrations as high as 7×1019 cm−3, with a full width at half maximum of ∼50 A(ring) at 300 K. This doping level is the highest yet reported for planar doping, and the narrow width indicates that the C atoms are restricted to one or two atomic planes. By switching out the TMG, and switching in the TEG to continue the growth of C-free GaAs we have grown sandwich-type structures with C levels of 1020 cm−3, which fall off within 210 A(ring) to C levels of 〈1017 cm−3. High-temperature annealing of such structures reveals a C diffusion coefficient of ≤10−16 cm2 s−1 at 950 °C, in agreement with other reports. This is at least three orders of magnitude less than for the other conventional p-type dopants, Be and Zn. Finally, we report the presence of strain in the highly C-doped layers, detected by x-ray diffraction. The lattice constant obtained corresponds roughly to that calculated by assuming a Vegard's law mixture of GaAs and 0.7% GaC. This distortion of the GaAs lattice has not been previously measured.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogenation on the low-temperature (5 K) photoluminescence properties of GaAs grown on InP substrate by metalorganic chemical vapor deposition are investigated. An emission band at ∼1.4 eV originating from the GaAs/InP interfacial region shows a 30-fold increase in intensity relative to the GaAs band-edge emission after exposure to hydrogen plasma for 30 min at 250 °C. This improvement in intensity is attributed to hydrogen passivation of defects at the heterointerface caused by the large (≈4%) lattice mismatch between GaAs and InP. Annealing the hydrogenated sample at 350 °C nullifies the passivation effect. Further, the 1.4-eV band shifts to higher energy on annealing the sample in the temperature range 150–450 °C with the hydrogenated sample exhibiting a larger shift than the untreated sample. It is suggested that the annealing-induced peak shift arises due to modification of the interface and that it is greater in the hydrogenated sample compared to the untreated sample.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 663-665 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing of GaAs within an enclosed, SiC-coated graphite susceptor is shown to eliminate slip formation during implant activation treatments (900 °C, 10 s) and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. The peak carrier concentration obtained in Si-implanted (3×1012 cm−2, 60 keV) GaAs by both methods is comparable, but the wafers annealed in the susceptor have tighter carrier profile width distributions measured over the whole wafer area.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...