ISSN:
1432-0630
Keywords:
7755 + F
;
7750 + P
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Rapid Thermal oxidation (RTO) of silicon has been investigated in the temperature range 1000° to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energyE a of 1.4 eV. Rapid thermal nitridation of SiO2 (96 Å) has been performed at three different temperatures: 1150°, 1200°, and 1250°C for a nitridation time up to 150 s. The characteristics of both materials have been investigated by capacitance-voltage, current-voltage, high resolution transmission electron microscopy and Auger spectroscopy. The results will be discussed with special emphasis on breakdown field statistics. The influence of Rapid Thermal Annealing (RTA) on the characteristics of both oxide and nitrided oxide will also be presented. A simulation model of a rapid thermal processing machine is presented with particular attention to the formation of slip lines. The theoretical results are in good agreement with those obtained experimentally.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615929
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