ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Multiple P or S hot ion implantation to diamond substrates was performed at 800°C.Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs.Temperature dependence of resistance demonstrated that a P as-implanted sample using ahomoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, apresence of a weak doping effect was observed in an as-implanted sample, but it was suggested thatthe dopant is not S itself but S and defect complex. However, post-implantation annealing resulted inhigh resistance of the samples and missing of such weak doping effects
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1353.pdf
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