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  • 1
    Electronic Resource
    Electronic Resource
    Extraction and spectrophotometric determination of Nd(III), Th(IV) and U(VI) in synthetic brine using Chlorophosphonazo III
    Amsterdam : Elsevier
    Analytica Chimica Acta 284 (1994), S. 593-597 
    Details
    ISSN: 0003-2670
    Keywords: Brines ; Chlorophosphonazo III ; Extraction ; Neodymium ; Spectrophotometry ; Thorium ; Uranium
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0003-2670(94)85064-X
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  • 2
    Electronic Resource
    Electronic Resource
    Interband tunneling between valence-band and conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 960-963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351772
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  • 3
    Electronic Resource
    Electronic Resource
    Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1081-1083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaAs sample under study is a n-low temperature-i-p structure grown by molecular beam epitaxy with a low-temperature (LT) layer grown at 300 °C and annealed at 620 °C for 1 h. Admittance measurements on this sample reveal a negative capacitance at low frequency. This work analyzes the origin of the negative capacitance and its corresponding frequency-dependent conductance by combining two current components: charging–discharging current and the inertial conducting current. Analysis results indicate that the activation energies and time constants of both current components closely resemble each other and should correspond to the same trap. Based on the results presented herein, we can conclude that the negative capacitance at low frequency provides evidence of a generation-recombination center with an activation energy of 0.77 eV in the LT layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120971
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  • 4
    Electronic Resource
    Electronic Resource
    Interband tunneling through a heavy hole state (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6443-6445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated interband tunneling transport through a hole well in five GaSb/AlSb/GaSb/AlSb/InAs type II tunnel devices in which the effect of the variation of barrier and well widths is systematically studied. Low temperature measurements were performed using high magnetic fields applied perpendicular to the current and hydrostatic pressures as external perturbations. A resonant current through the ground heavy hole subband in the GaSb well could be identified for the first time. This examination points out (i) the role of in-plane momentum conservation in determining the resonance onset voltage, and (ii) the occurrence of a shoulder in the current when a maximum of states conducts through a resonant subband.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355128
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  • 5
    Electronic Resource
    Electronic Resource
    Adenosine A2A receptors and metabotropic glutamate 5 receptors are co-localized and functionally interact in the hippocampus: a possible key mechanism in the modulation of N-methyl-d-aspartate effects (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 95 (2005), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Hippocampal metabotropic glutamate 5 receptors (mGlu5Rs) regulate both physiological and pathological responses to glutamate. Because mGlu5R activation enhances NMDA-mediated effects, and given the role played by NMDA receptors in synaptic plasticity and excitotoxicity, modulating mGlu5R may influence both the physiological and the pathological effects elicited by NMDA receptor stimulation. We evaluated whether adenosine A2A receptors (A2ARs) modulated mGlu5R-dependent effects in the hippocampus, as they do in the striatum. Co-application of the A2AR agonist CGS 21680 with the mGlu5R agonist (RS)-2-chloro-s-hydroxyphenylglycine(CHPG) synergistically reduced field excitatory postsynaptic potentials in the CA1 area of rat hippocampal slices. Endogenous tone at A2ARs seemed to be required to enable mGlu5R-mediated effects, as the ability of CHPG to potentiate NMDA effects was antagonized by the selective A2AR antagonist ZM 241385 in rat hippocampal slices and cultured hippocampal neurons, and abolished in the hippocampus of A2AR knockout mice. Evidence for the interaction between A2ARs and mGlu5Rs was further strengthened by demonstrating their co-localization in hippocampal synapses. This is the first evidence showing that hippocampal A2ARs and mGlu5Rs are co-located and act synergistically, and that A2ARs play a permissive role in mGlu5R receptor-mediated potentiation of NMDA effects in the hippocampus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.2005.03455.x
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  • 6
    Electronic Resource
    Electronic Resource
    The double-RNA-specific adenosine deaminase (DSRAD) gene in dyschromatosis symmetrica hereditaria patients: two novel mutations and one previously described (2005)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 153 (2005), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background  Dyschromatosis symmetrica hereditaria (DSH, MIM 127400) is an autosomal dominant pigmentary genodermatosis. Pathogenic mutations in the double-RNA-specific adenosine deaminase (DSRAD) gene encoding an RNA editing enzyme have recently been identified.Objectives  To identify gene mutations of DSRAD in Chinese patients with DSH.Methods  Three unrelated Chinese patients with DSH were subjected to mutation detection in DSRAD. Two had family histories of DSH. All the coding exons and their flanking sequences were amplified and sequenced.Results  All three patients had heterozygous mutations including one non-sense, one frameshift and one missense mutation in DSRAD.Conclusions  Two novel mutations, c.3169delC (p.L1057fs) and c.3247C→T (p.R1083C), and one recurrent mutation c.1420C→T (p.R474X), were found in this series of Chinese patients with DSH.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2133.2005.06572.x
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  • 7
    Electronic Resource
    Electronic Resource
    Assessment of genetic relationships among Cucumis spp. by SSR and RAPD marker analysis (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 123 (2004), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The first successful production of a sterile interspecific hybrid obtained from a cross between Cucumis hystrix Chakr. (2n = 2x = 24) and Cucumis sativus var. sativus L. (2n =2x = 14), and its subsequent fertility restoration through chromosome doubling provide an effective means for investigating genetic relationships among Cucumis spp. In this study, random amplified polymorphic DNA (RAPD) and simple sequence repeat (SSR) markers were used to investigate relationships among C. s. var. sativus L., C. s. var. hardwickii (R.) Alef., C hystrix, C. hytivus Chen & Kirkbride (the amphidiploid species from chromosome doubling of the C. sativus x C. hystrix interspecific hybrid, 2n = 38), C. melo (2n =2x = 24) and C. metuliferus Meyer and Naudin (2n =2x= 24). A total of 109 SSR bands and 398 RAPD primed sites were used to calculate Jaccard's distance coefficients for cluster analysis using a unweighted pair-group method using an arithmetic averaging (UPGMA) algorithm. The genetic relationships identified using SSR and RAPDmarkers were highly concordant, such that the correlation between SSR and RAPDgenetic distance (GD) estimates was r = 0.94. SSR and RAPDanalysis of 22 accessions allowed for their grouping into two distinct groups designated as CS and CM. While group CS consisted of 11 C. sativus genotypes, and the C. hytivus and C. hystrix accessions, group CM included six C. melo genotypes and C. metuliferus. The GD values between C. hystrix and C. sativus ascribed by SSR and RAPD matrices were 0.59 and 0.57, respectively. These GDs were smaller than those detected between C. hystrix and C melo (0.87 and 0.70 derived from SSR and RAPD markers, respectively).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2003.00889.x
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  • 8
    Electronic Resource
    Electronic Resource
    Meiotic chromosome behaviour in an allotriploid derived from an amphidiploid × diploid mating in Cucumis (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 124 (2005), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: A synthetic amphidiploid species Cucumis hyriviis Chen & Kirkbride (2n = 4x = 38; genome designated as HHCC) has recently been created from an interspecific mating between C. sativus L. (2n = 2x = 14: genome designated as CC) and C. hystrx. Chakr. (2n = 2x = 24; genome designated as HH). This amphidiploid is resistant to root knot nematode, tolerant to low irradiance, and has higher nutritional value than standard processing cucumber cultivars. An allotriploid (2n = 3x = 26; HCC) was derived from a cross between C. sativus L. and C. hytivus Chen & Kirkbride. Diploid meiotic behaviour in C. sativus and C. hystrix involves the development of seven and 12 metaphase bivalents respectively. In the derived allotriploid. univalents. bivalents, and trivalents (at relatively low frequency) were observed at metaphase I indicating that some homeologues from the C and H genomes can synapse. Based on a comparative karyotype analysis of cucumber (i.e. chromosome size and pairing behaviour) and aliotriploid plants, the seven bivalents observed at metaphase I were ascertained to be cucumber homologues, while the 12 univalents were of C. hystrix origin thus confirming the allotriploid karyotypic constitution to be HCC. On average, the frequency of trivalents was 0.24 at diakinesis and 0.22 in 100 meiocytes at metaphase I. indicating the possibility of genetic exchange due to the homoeology between the C and H genomes. After simultaneous cytokinesis, only polyads were observed in pollen mother cells (PMCs) at telophase II, which led to the production of sterile pollen grains. Multi-polarization of chromosomes was dominant at anaphase II. However. in about 20% PMCs. chromosomes separated to form a 7C + 1-2H complement, suggesting a possible method for the production of alien addition cucumber-C hystrix lines through further backcrossing of the allotriploid to diploid cucumber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.2005.01066.x
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical and microstructural characteristics of Ti contacts on (001)Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2590-2597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of the electrical and microstructural characteristics of the Ti contact on silicon has been carried out. The presence of As in Ti/n+-Si samples was found to retard the formation of polycrystalline silicide (p-silicide) compared with that in Ti/p+-Si samples with BF2+ implantation. Amorphous interlayers (a-interlayers) were found to be present in both Ti/n-Si and Ti/p-Si samples annealed at temperatures of and lower than 450 °C. Although the Schottky barrier heights (SBH's) vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBH's at the a-interlayer/n-Si and a-interlayer/p-Si were measured to be about 0.52–0.54 and 0.59–0.57 eV, respectively. The specific contact resistance (ρc) in the Ti/n+-Si system was measured to be the lowest with a value of 1.4×10−7 Ω cm2 when the a interlayer is present. In Ti/p+-Si system, the minimum ρc is about 3×10−7 Ω cm2. The variation in contact resistance with annealing temperature for both Ti/n+-Si and Ti/p+-Si samples is correlated to the change in dopant concentration beneath the contacts as well as microstructures. In the temperature regime where the a interlayer is in contact with the silicon substrate, the junction diode leakage current densities (Jleak's) are considerably lower than those in samples annealed at higher temperatures. The Jleak at −6 V reverse bias is lower than 1 nA/cm2. The breakdown voltage is about 14 V (16 V) for the n+/p (p+/n) junction. The thickness of consumed Si is less in samples annealed at low temperature, and the a-interlayer/Si or p-silicide/Si interface is accordingly farther away from the junction as well as the end-of-range defects. The interface of p-silicide/Si is rougher than that of a-interlayer/Si. In addition, the roughness of the p-silicide/Si interface increases with annealing temperature. For both p+/n and n+/p junctions annealed at 900 °C, rough p-silicide/Si interfaces are thought to lead to spiking and increase the leakage currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354672
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  • 10
    Electronic Resource
    Electronic Resource
    The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4432-4435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and study a new GaSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling diode by varying the thicknesses of the InAs layer. A twice-higher peak current density and a three-times-higher peak-to-valley current ratio in the proposed structure with a 30-A(ring)-thick InAs layer were observed relative to the structure with no InAs layer. This result indicates that the characteristic of the negative differential resistance can be improved simply by placing a thin effective InAs barrier on the GaSb side of the GaSb/AlSb/InAs single-barrier structure. The increase of the peak current is interpreted as the result of forming a quasi-bound state in the GaSb well. This interpretation is supported by the observation that the current-voltage characteristic of the proposed structure is similar to that of a conventional GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350783
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