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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 96 (1974), S. 4750-4752 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 96 (1974), S. 3038-3042 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 98 (1976), S. 990-992 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 61 (1939), S. 2283-2284 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0428
    Keywords: Keywords Beta cells ; chemokine ; phospholipase-D ; DDRT-PCR ; interleukin-1 ; monocyte chemoattractant protein-1 ; adenine nucleotide translocator ; CINC-1 ; CINC-3.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Aims/hypothesis. Interleukin-1β is a putative mediator of pancreatic beta-cell dysfunction and damage in Type I (insulin-dependent) diabetes mellitus. To better understand the molecular mechanisms involved in IL-1β effects, we carried out a differential display of mRNA by RT-PCR to identify novel cytokine-regulated genes. Methods. Fluorescence activated cell sorting-purified rat pancreatic beta-cells were exposed for 6 or 24 h to IL-1β. Differentially expressed cDNA bands were cloned and then identified by comparing their sequences with data from the GenBank. Differential gene expression was confirmed by RT-PCR using specific primers. Results. Interleukin-1β increased the expression of adenine nucleotide translocator-1, phospholipase D-1 and cytokine-induced neutrophil chemoattractant-1 and decreased expression of the protein tyrosine phosphatase-like protein IA-2. Interleukin-1β-induced differential expression of these genes in beta cells was confirmed by RT-PCR. In additional studies, IL-1β was shown to induce chemokines other than cytokine-induced neutrophil chemoattractant-1, including cytokine-induced neutrophil chemoattractant-3 and monocyte chemotactic protein-1. Conclusion/interpretation. Our observations indicate that IL-1β modifies the expression of several genes in pancreatic beta cells. These genes may affect both function, viability and beta-cell recognition by the immune system. Functional characterization of the mRNAs which have been identified could facilitate a better understanding of the mechanisms leading to beta-cell destruction in Type I diabetes. [Diabetologia (1999) 42: 1199–1203]
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1116-1122 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-sensitivity high-spatial-resolution eddy-current apparatus has been set up for contactless conductivity measurements on Si and HgCdTe. The inductive sensitivity limit has been demonstrated, on Si slices, to a very low σt (product of conductivity and thickness) of 0.0004 Ω−1 and the spatial resolution was shown to be about 4 mm, both a threefold improvement over past published results. HgCdTe bulk slices and epitaxial films have been measured over a wide range of σt from 0.001 to 1 Ω−1 at 77 K. The conductivity mapping measurements on HgCdTe material were also demonstrated for the first time. The sensitivity of eddy-current probes consisting of miniature commercial rf coils were shown to be not only temperature independent, but also very stable after repeated thermal cyclings between 300 and 77 K. This feature makes the eddy-current method an ideal technique for routine contactless conductivity measurements on HgCdTe material at 77 K. We also show that both the sensitivity and the spatial resolution of eddy-current probes can be explained quantitatively by a simple theory which treats coils as magnetic dipoles.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 75 (1953), S. 2324-2326 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4761-4766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination mechanisms of the minority-carrier lifetime in n-type indium-doped Hg0.78Cd0.22Te liquid-phase-epitaxial films have been studied. Its temperature dependence was measured from 78 to 200 K using standard photoconductivity decay method. The dependence on doping concentration from 1×1014 to 2×1015 cm−3 was measured using a contactless microwave reflection method at 77 K. From best fits to the experimental temperature dependence data, it was found that lifetimes at temperatures higher than 130 K were dominated by Auger recombination with a value of 0.15 for the overlap integral of Bloch functions. For most films with a doping concentration below 1×1015 cm−3, Shockley–Read–Hall recombination via an acceptor-like deep level at about 40 meV below the conduction band affected lifetimes below 120 K. It was also found that the recombination parameters determined from fitting the lifetime versus temperature curves were adequate to analyze and understand the lifetime versus doping concentration curve, which comprised data from over 100 films.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4787-4789 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-color photoconductive detectors in the 3–5 μm wavelength range using multilayer undoped n-type Hg1−xCdxTe heterostructures have been demonstrated at room temperature. These heterostructures, consisting of three or four Hg1−xCdxTe layers separated with CdTe layers, were grown by the metal-organic chemical-vapor-deposition (MOCVD) technique. The quality of MOCVD films was verified by near-theoretical values of the minority-carrier lifetime at 300 K, ranging from 0.8 to 4.7 μs depending on the x value. The Hg1−xCdxTe layers are either detectors or filters, and the CdTe layers serve as insulating separators. The concept of using the exponential absorption tails of two Hg1−xCdxTe layers with different band gaps to form an absorption band was verified by the difference in the photoconductive spectral responses between backside and frontside illumination. Two different multilayer heterostructures with two-color peaks at 3.2/3.8 μm and 3.7/4.6 μm, respectively, were studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2916-2920 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of majority carrier mobility on carrier concentration at 77 K in Hg0.78Cd0.22Te has been studied by Hall measurements on about 190 n-type and 360 p-type liquid phase epitaxial films. The n-type films were indium doped with the carrier concentration varying from 1×1014 to 2×1016 cm−3. The measured electron mobility changed from 2×105 to 8×104 cm2/V s. The p-type films were undoped (Hg vacancy) with the carrier concentration varying from 2×1015 to 3×1017 cm−3. The measured hole mobility changed from 600 to 200 cm2/V s. By comparing calculated mobility curves with the experimental data, we found that the major scattering mechanisms for electron mobility in n-type materials were polar optical phonon, ionized impurity, and alloy disorder scatterings. These three scattering mechanisms also dominate the hole mobility in p-type materials at 77 K. It was also found that a model with Hg vacancy as doubly ionized shallow acceptors fitted very well the hole mobility versus carrier concentration data.
    Type of Medium: Electronic Resource
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