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  • 1
    Electronic Resource
    Electronic Resource
    Growth of giant magnetoresistance spin valves using Pb and Au as surfactants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5183-5191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of Pb and Au as surfactants in an attempt to achieve smoother and sharper interfaces in three types of giant magnetoresistance (GMR) spin valve multilayers: symmetric spin valves, bottom spin valves, and top spin valves. The coupling fields are reduced by a factor of 10 for symmetric and bottom spin valves and by a factor of 3 for top spin valves, presumably by suppressing roughness and interdiffusion at the Co/Cu/Co interfaces, when ∼1 monolayer of Pb is deposited in the early stages of spin valve growth. The Pb has a strong tendency to float out or segregate to the surface during deposition of the spin valve leaving the GMR largely unaltered. Au is almost as effective as Pb, however the Au tends to be left behind in the spin valve, and the GMR is reduced slightly. Attempts to use Hg as a surfactant were unsuccessful. The coupling field increased, and the GMR decreased sharply. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363460
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  • 2
    Electronic Resource
    Electronic Resource
    Optimizing the giant magnetoresistance of symmetric and bottom spin valves (invited) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5277-5281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have attempted to optimize the values of the giant magnetoresistance in symmetric spin valves of the type NiO/Co/Cu/Co/Cu/Co/NiO (achieving 23.4%) and in bottom spin valves of the type Co/Cu/Co/NiO (achieving 17.0%), the largest values ever reported for such structures. The key elements in this achievement are improved vacuum conditions and careful attention to the film thicknesses. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361352
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  • 3
    Electronic Resource
    Electronic Resource
    The trade-off between large magnetoresistance and small coercivity in symmetric spin valves (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8603-8606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of various alloys as substitutes for pure Co in the center film of symmetric spin valves of the type NiO/Co/Cu/Co/Cu/Co/NiO. The aim of this work is to identify magnetic materials that exhibit smaller coercivities than pure Co for the center or "valve'' film but which retain much of the giant magnetoresistance associated with a pure Co film. The materials investigated include Co95Fe5, Co90Fe10, Ni80Fe20, Co86Fe10.5Ni3.5, and Co85B15. It appears that each of these alloys scatters electrons more strongly than does pure Co as they cross the center film. This scattering degrades the dual spin-valve effect, which is the primary advantage of the symmetric spin valve. As a result, a tradeoff exists between large GMR and small coercivity when using these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362457
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of giant magnetoresistance spin valves using indium as a surfactant (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2491-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the use of In as a surfactant to achieve smoother interfaces in spin-valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. The coupling field is reduced from ∼0.8 to ∼0.3 mT, presumably by suppressing roughness at the Co/Cu/Co interfaces, when 0.5–1.0 nm In is deposited on the first Co film just prior to Cu deposition or on the Cu film just prior to deposition of the second Co film. The In has a strong tendency to float-out to the surface during deposition of the spin valve leaving the spin-valve layers largely intact. The exchange bias at the FeMn/Ni80Fe20 interface can be increased from 12 to 25 mT by the use of thicker In (1.4 nm). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362659
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature growth of giant magnetoresistance spin valves (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 282-290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dependence of the giant magnetoresistance (GMR) effect, the coercivity, the coupling field, and the resistivity on film deposition at low-substrate temperatures (150 K) in spin valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. Low substrate temperatures tend to suppress both thermally activated surface diffusion of deposited atoms and interdiffusion at interfaces, which often occur during thin-film deposition at room temperature. We find significant increases in the GMR, significant reductions in the magnetic coupling across the Cu layer, slight reductions in the coercivity of the unpinned film, and slight reductions in the resistivity depending on which parts of the multilayer are deposited at low temperature. When the entire film is deposited at 150 K we obtain a GMR of 8.8% at a coercivity of less than 0.5 mT (5 Oe). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360942
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of Ta-pinned spin valves (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6825-6827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been found that large uniaxial anisotropy fields in excess of 120 kA/m (1500 Oe) can be created in thin (3–5 nm) films of Co by obliquely sputtered Ta underlayers. This anisotropy can be used to pin the bottom film of a spin valve while having only a modest effect on the top "free" film, separated by a 2.5 nm Cu spacer layer. This article describes measurements of thermal stability in these Ta-pinned spin valves. Using room temperature giant magnetoresistance (GMR) as a measure, we find that the structure is stable under cumulative 20 min anneals at 25 °C intervals up to 300 °C; GMR decreases to zero upon further anneals up to 450 °C. Measurements taken at elevated temperatures reveal that GMR decreases linearly with temperature, extrapolating to zero at approximately 425 °C, while the anisotropy field is much less temperature dependent, remaining nearly constant up to 150 °C and gradually decreasing to 50% of its room temperature value at 325 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357147
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  • 7
    Electronic Resource
    Electronic Resource
    Exchange bias relaxation in CoO-biased films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6406-6408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because the memory of the bias direction is carried by the antiferromagnetic order in exchange biased films, the stability of the antiferromagnetic order is critical to the existence of the exchange bias field. Ferromagnetic resonance was used to measure the relaxation behavior of polycrystalline CoO films coupled to films of Ni80Fe20, probing the system on the time scale of the experiment, (approximate)103 s, and the time scale of the magnetic precession, (approximate)10−10 s. Unidirectional anisotropy (exchange biasing) and isotropic resonance field shifts are observed at the lowest temperatures. Above the apparent exchange bias blocking temperature, isotropic resonance field shifts persist. At still higher temperatures, diminishing resonance field shifts are accompanied by peaks in the FMR linewidth. The results highlight the effects of varying relaxation rates in the CoO relative to the two experimental time scales. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373424
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  • 8
    Electronic Resource
    Electronic Resource
    Surface oxidation as a diffusion barrier for Al deposited on ferromagnetic metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5209-5214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray reflectometry has been used to study surface oxidation as a diffusion barrier for Al deposited on ferromagnetic metals (Co, Fe, Ni, and Ni80Fe20). Samples of the form SiO2(backward-slash)10 nm X(backward-slash)4 nm Al with X=(Co, Fe, Ni, and Ni80Fe20) were investigated for X(backward-slash)Al intermixing. Surface oxidation was achieved by exposing the ferromagnetic layer to O2 to oxidize the top two or three atomic layers before depositing the Al layer. Specular x-ray scans were used for the analysis. Samples of the form SiO2(backward-slash)10 nm X(backward-slash)4 nm Au were used to separate topographical roughness from intermixing. Surface oxidation was found to suppress the diffusion of Al into Co, Ni, and Ni80Fe20 but not into Fe. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359151
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  • 9
    Electronic Resource
    Electronic Resource
    Interfacial roughness effects on interlayer coupling in spin valves grown on different seed layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3023-3026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the behavior of interlayer coupling in giant magnetoresistance spin valves as a function of seed layer composition and spacer layer thickness. Using in situ scanning tunneling microscopy, we have measured directly the roughness of the top surface of the lower ferromagnetic layer. We find that the seed layer composition is correlated to the roughnesses of the interfaces inside the spin valve. Interlayer coupling increases with decreasing Cu spacer layer thickness and with increasing interfacial roughness. Results favorably compare to a topographically derived magnetostatic interaction as described by a modified version of Néel's "orange peel" model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372390
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  • 10
    Electronic Resource
    Electronic Resource
    Deuterium transport through device structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2237-2244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use secondary ion mass spectrometry to characterize the hydrogen/deuterium distribution and concentration on complimentary "metal" oxide silicon (CMOS) test structures subjected to molecular deuterium (D2) anneals. We examine the temperature dependence and the influence of doping on the transport of deuterium to the gate oxide interfaces resulting in interface passivation. We find that undoped polycrystalline silicon appears to be an efficient barrier for deuterium transport at typical postmetallization sintering temperatures. We also examine the permeability of device structures that include dielectric encapsulation layers after typical postmetal sintering conditions employed in a conventional CMOS process flow. It is found that typical low temperature deposited oxide dielectrics are quite permeable by molecular deuterium at typical sintering temperatures (435 °C). In contrast, chemical vapor deposited silicon nitride dielectrics appear to form a complete barrier to deuterium diffusion (even for layers as thin as 300 Å). We also find that nitrides which receive a high thermal budget exposure, such as the source/drain anneal, appears to regain permeability to deuterium diffusion/transport. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371036
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