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  • 1
    Electronic Resource
    Electronic Resource
    Fluorometric determination of citric and aconitic acids with dicyclohexylcarbodiimide (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 2587-2590 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00251a040
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  • 2
    Electronic Resource
    Electronic Resource
    Dicyclohexylcarbodiimide as a cleaving agent for colorimetric determination of pyridyl and pyrimidinyl compounds (1985)
    s.l. : American Chemical Society
    Analytical chemistry 57 (1985), S. 1461-1464 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00284a063
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  • 3
    Electronic Resource
    Electronic Resource
    Improvement of selectivity during diamond growth utilizing a new process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 940-942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new process, which employs the photoresist or SiO2 as a mask, the CH4-CO2 gas mixtures as the gas source of diamond deposition, and the HF:HNO3:H2O (1:1.1:10) solution as etching solution after the first step deposition, has been developed to improve the selective growth of diamond films. The longer etching time would result in increasing the selectivity during the following step of diamond film growth. The diamond nuclei growth on the undesired region would be removed and a thin SiO2 layer would be formed using the above solution, therefore, increasing the selectivity. Scanning electron microscopy and electron spectroscopy for chemical analysis were used to examine the selective loss and morphological change for the as-grown diamond films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359023
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1634-1636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon doping of GaAs grown by metalorganic chemical vapor deposition using a silane source has been investigated. The amphoteric property of the Si dopant is demonstrated for the first time. It is found that the doping characteristics are strongly temperature dependent. At the growth temperature higher than 600 °C and the arsine to trimethylgallium mole ratio (AsH3/TMG) around 217, the conduction is n type and the carrier concentration increases as the temperature increases. On the other hand, when the growth temperature is lower than 600 °C, the carrier concentration increases as the temperature decreases and the conduction becomes p type at 400–450 °C. In addition, when the AsH3/TMG mole ratio is below 50, the Si-doped GaAs layers also become p type. The GaAs light-emitting diode is thus successfully fabricated using a single silicon dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98579
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  • 5
    Electronic Resource
    Electronic Resource
    Optical emission spectroscopy studies of the effects of nitrogen addition on diamond synthesis in a CH4–CO2 gas mixture (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2149-2151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of nitrogen on the growth of diamond using the gas mixtures of CH4–CO2 by microwave plasma chemical vapor deposition was investigated. A clear improvement in the surface morphology and quality of the diamond films indicates the beneficial effect of adding nitrogen to CH4–CO gas mixtures. Analysis using Auger electron spectroscopy and secondary ion mass spectroscopy shows very low and uniform levels of nitrogen in the diamond films. Atomic nitrogen plays a dominant role in C/H/O/N plasma chemical vapor deposition processes because of the amount of oxygen atoms increased via the titration reaction of nitrogen atoms (a high-rate reaction): N+NO→N2+O. This produces a significant influence on diamond synthesis in a CH4–CO2–N2 gas mixture. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114749
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  • 6
    Electronic Resource
    Electronic Resource
    Role of hydrogen and oxygen in diamond synthesis using carbon-dioxide–methane-gas mixtures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4483-4489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A negative effect on the quality of diamond film because of the addition of hydrogen to carbon-dioxide–hydrocarbon gases was investigated. To elucidate the role of hydrogen and oxygen in diamond synthesis using microwave plasma chemical-vapor deposition, diamond films were deposited by adding hydrogen and oxygen to carbon-dioxide–methane-gas mixtures. Improvements in the quality of diamond film and extensions of the diamond-forming region were obtained, due to the addition of oxygen to the carbon-dioxide–methane-gas mixtures. The nucleation density of deposits increased when the amount of hydrogen was increased but decreased when the amount of oxygen was increased. The results of optical emission spectroscopy indicate that the amount of atomic hydrogen in the ground state remained nearly the same, respectively, with increasing amounts of hydrogen and oxygen. However, the amount of electronically excited atomic hydrogen and C2 emissions increased with an increase in the amount of added hydrogen; this means that the electronically excited atomic hydrogen did not benefit diamond growth and the C2 radicals facilitated the formation of amorphous or graphitic carbon. In contrast to the addition of hydrogen, when oxygen was added, the electronically excited atomic hydrogen and C2 radicals decreased, and a larger amount of oxygen-containing species such as atomic oxygen and OH radicals was in the plasma, so the quality of the diamond film improved. In summary, adding hydrogen to the carbon-dioxide–methane-gas mixtures had a negative effect on diamond growth, whereas adding oxygen had a beneficial effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354364
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  • 7
    Electronic Resource
    Electronic Resource
    A Fluorometric Assay of trans-Cinnamaldehyde in Cinnamon (1984)
    s.l. : American Chemical Society
    Journal of natural products 47 (1984), S. 536-538 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50033a025
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  • 8
    Electronic Resource
    Electronic Resource
    N-Nitrosoatrazine: synthesis, kinetics of formation, and nuclear magnetic resonance spectra and other properties (1991)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 39 (1991), S. 1205-1210 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf00007a002
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  • 9
    Electronic Resource
    Electronic Resource
    Vacuoles and vesicles in the rat junctional epithelium: A study with serial ultrathin sections (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of periodontal research 26 (1991), S. 0 
    Details
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To investigate whether the electron-lucent structures resembling vesicles and vacuoles in the rat molar junctional epithelium (JE) are in fact intracellular or extracellular, a study using serial ultrathin sections was carried out. In one series of experiments, the animals were not treated before the tissues were conventionally fixed; in another, anesthetized animals were administered horseradish peroxidase 20 min before the tissues were fixed. A large number of electron-lucent structures resembling vesicles and vacuoles were detected in both the peripheral and central cytoplasm of the JE localized at enamel and connective tissue sites. These were 70 to 800 nm in diameter and had a lucency similar to that of the extracellular space in untreated specimens fixed with conventional fixative. Serial ultrathin sectioning revealed that the electron-lucent structures gradually became part of the extracellular space in the following sections. These were also found in the middle portion of the cytoplasm in specimens pretreated with horseradish peroxidase. Numerous vacuole-like structures containing peroxidase-positive materials were found to be contiguous with the extracellular space. A small number of vesicles, also containing peroxidasepositive materials, did not appear in the previous or following sections. These results indicate that almost all electron-lucent structures resembling vesicles and vacuoles in the JE are located at the end of a long infolding, and are still in contact with the extracellular space.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0765.1991.tb01630.x
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  • 10
    Electronic Resource
    Electronic Resource
    The Wealth Effect of Domestic Joint Ventures: Evidence from Taiwan (2002)
    Oxford, UK and Boston, USA : Blackwell Publishers Ltd
    Journal of business finance & accounting 29 (2002), S. 0 
    Details
    ISSN: 1468-5957
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: This study presents important international evidence by examining the wealth effect of domestic joint ventures by Taiwanese firms. In opposite to United States evidence, we find that announcements of domestic joint ventures by Taiwanese firms are, on average, associated with significantly negative abnormal stock returns. We also find that the stock market response to announced domestic joint ventures is significantly positively related to the announcing firms’ investment opportunities, size of investment and debt ratio, and is significantly negatively related to the business relatedness variable. In contrast, free cash flow, firm size, relative firm size and managerial ownership are found to have no significant power in explaining the market response. Our results support the investment opportunities, synergy and complementarity hypotheses as well as a broad interpretation of the free cash flow hypothesis, but reject the absolute size, relative size and alignment-of-interests hypotheses. This study makes valuable contributions to the literature by providing the first direct evidence on the role of investment opportunities, synergy and alignment-of-interests in explaining the wealth effect of domestic joint ventures
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/1468-5957.00429
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