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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1381-1384 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The influence of transverse electric field on the photoluminescence linewidth of excitonic transition in a semiconductor quantum well structure is examined within a theoretical model which ascribes the origin of the linewidth to band-edge discontinuity fluctuations arising from local compositional fluctuations at the interfaces, and to short-ranged alloy disorder scattering. In particular, the model is applied to the AlxGa1−xAs/GaAs system and the dependence of linewidth on the width of the quantum well, the average composition of the alloy, the amplitude of composition fluctuation, and the value of applied field (0–100 kV/cm) is studied.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 578-580 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific types of gradations derived from consideration of typical experimental situations, and comparison is made with the available experimental data.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2243-2248 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Amorphous carbon thin films were prepared at 30, 200, and 450 °C by magnetron sputtering of a graphite target. The surface structure and chemical bonding (sp2/sp3) of the carbon films were characterized by scanning tunneling microscopy (STM) and Raman spectroscopy. STM images show that graphite microcrystallites of 20–40 A(ring) in size are present at the surfaces of all the films and the number of the microcrystallites increases with increasing substrate temperature. The microcrystallites often contain structural defects. Raman measurements show that increasing the substrate temperature results in an increase in the sp2-bonded fraction of carbon atoms and a decrease in the microstructural defects. These results indicate that the microstructural changes are correlated with changes in the chemical bonding ratio (sp3/sp3) and no diamond microcrystallites are present in the amorphous carbon. A three-dimensional atomic structure of the graphite microcrystallites is discussed in terms of turbostratic graphite.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5799-5807 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Multilayers of (Co3 A(ring), Pt15 A(ring))x, x=15 or 30 repeats, with or without a 200 A(ring) silver buffer layer, were grown on GaAs (111) substrates by molecular-beam epitaxy. Vibrating sample magnetometry measurements confirmed that the samples with the Ag buffer layer show strong uniaxial magnetic anisotropy perpendicular to the surface. The perpendicular anisotropy exhibited by these metallic superlattices is discussed in terms of the microstructure of the overall multilayer stack, as well as the structural characteristics of the Co interface layer. Samples grown on the Ag buffer layer show strong (111) texture with 30–40-nm-size twin-related grains. These grains, correspond to the two possible (111) stacking sequence for an fcc lattice, i.e., double positioning. However, direct growth on GaAs (111) results in randomly oriented 10–20 nm grains. All samples exhibit a repeat period of 1.83 nm in both low-angle reflectivity and high-angle aitch-theta–2aitch-theta x-ray scattering measurements. In addition, transverse scans through the low-angle multilayer Bragg peaks show the interfaces to be diffuse in nature indicative of considerable in-plane inhomogeneity and/or compound formation. High-resolution electron microscopy measurements of cross sections compared with image simulations confirm that the interface layer is diffuse and its stoichiometry is such that the Co occupation is less than 40%. Redistribution of Co should then extend over at least four monolayers. The nanostructure of the samples grown with the Ag buffer layer comprises an eight atomic layer repeat with the Co interface layer diffuse over four monolayers. The microstructure is strongly (111) textured with columns of twin related 30-nm-sized grains. It is suggested that the combination of interdiffusion, highly oriented but twin-related columnar growth, small grain size with a possible nanometer-scale second phase may be the key to the understanding of the perpendicular anisotropy observed in these (111) superlattices.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 898-900 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on measurements of fractal dimension for ultrathin cobalt films deposited onto silicon substrates. A new method has been used for the fractal dimension measurements, which involves an image processing of transmission electron microscopy (TEM) bright field image of the ultrathin film structure. The TEM image is digitized by 512×512 pixels with intensity levels from 0 to 255, and topographic contour lines which connect the same intensity levels are obtained from the digitized image. The fractal dimension (D) of the ultrathin film structure is calculated from the contour lines by using a relation (L=AD/2) between the areas (A) and perimeters (L) for each of the closed lines as suggested by Mandelbrot [Fractal Geometry of Nature (Freeman, New York, 1982), Chap. 12]. Results of the measurements indicate that the Co-Si interfacial dimension is increased from 2.0 to near 2.5 as the reaction is progressed. The results are compared with the fluctuating fractal dimension calculated from the noise exponent data.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2037-2039 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report reproducible realization of GaAs/Al0.25 Ga0.75 As(100) inverted heterojunctions with liquid-nitrogen electron mobilities in excess of 105 cm2 /(V s). This is made possible through use of reflection high-energy electron-diffraction (RHEED) intensity dynamics determined optimized growth conditions, but without the use of short-period superlattices as buffers or spacer layers.
    Materialart: Digitale Medien
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  • 7
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1−xAs alloys grown under growth conditions indicated by reflection high-energy electron diffraction intensity dynamics to be near optimal and away from optimal.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1016-1018 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The contributions of the remote ionized impurity scattering, alloy disorder scattering, and scattering due to band-edge discontinuity fluctuation to the low-temperature electron mobility in one-side modulation-doped Al0.33 Ga0.67 As/GaAs/Al0.33Ga0.67As single square quantum well structures are theoretically investigated via the memory function approach. The carrier wave functions and potential distributions used are obtained self-consistently. Dependence of mobility on quantum well width and spacer layer thickness shows that mobilities of the order of 106 cm2 /V s can be achieved in such structures.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2371-2373 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Molecular beam epitaxy was used to grow ultrathin Co-Pt multilayers on GaAs (111) substrates with 200 A(ring) thick Ag layer as a buffer. Magnetic properties (B-H loop) of the multilayers, measured by a vibrating sample magnetometer, confirmed that these samples exhibit strong anisotropy perpendicular to the film surface. Reflection high energy electron diffraction and low-energy electron diffraction showed that twin-related Ag grains nucleated on the substrates. The epitaxial relationship of the multilayers with respect to the substrate was investigated by high-resolution transmission electron microscopy. Twin-related grains, 30–40 nm in diameter, are present in the multilayers. These twins are generated either by propagation of existing twin boundaries in the Ag layer into the multilayers or by nucleation of twin-related Pt grains on the Ag buffer surface.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Histopathology 33 (1998), S. 0 
    ISSN: 1365-2559
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
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