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  • 1
    Electronic Resource
    Electronic Resource
    Acid Hydrolysis of .kappa.-Carrageenan in a Batch Reactor: Stochastic Simulation of Change of Molecular Weight Distribution with Time (1994)
    s.l. : American Chemical Society
    Biotechnology progress 10 (1994), S. 389-397 
    Details
    ISSN: 1520-6033
    Source: ACS Legacy Archives
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bp00028a008
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of extracellular glutathione in rat brain by microdialysis and high-performance liquid chromatography with fluorescence detection
    Amsterdam : Elsevier
    Journal of Chromatography B: Biomedical Sciences and Applications 661 (1994), S. 231-235 
    Details
    ISSN: 0378-4347
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0378-4347(94)80050-2
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  • 3
    Electronic Resource
    Electronic Resource
    GaxIn1−xAs quantum wire heterostructures formed by strain-induced lateral-layer ordering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6270-6275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaxIn1−xAs quantum wire (QWR) arrays were grown on (100) on-axis InP substrates by single-step molecular-beam epitaxy. The QWRs were formed in situ in (GaAs)2/(InAs)2.2 short-period-superlattice (SPS) layers by the strain-induced lateral-layer ordering (SILO) process. An analysis of the cross-sectional and plan-view transmission electron microscopy images, photoluminescence peak energies, and polarization anisotropy has confirmed the QWR nature of these heterostructures. The SILO process occurs over a wide growth temperature range near 500 °C. However, both high and low growth temperatures result in a weaker lateral composition modulation. The strength of the lateral composition modulation is proportional to the total thickness of the SPS quantum-well layers, regardless of the thickness of the individual quantum well. In other words, the magnitude of composition modulation accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model has been proven to be part of the driving force of the SILO process, in addition to a dynamic surface diffusion during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360507
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  • 4
    Electronic Resource
    Electronic Resource
    The reduction and enhancement of spontaneous ordering in (InP)2/(GaP)2 quantum wells grown by solid source molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6274-6278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied methods for reducing and enhancing the intensity of the spontaneous ordering in the growth of (InP)2/(GaP)2 short-period superlattice (SPS) quantum wells using solid source molecular beam epitaxy. The intensity of the ordering effect can be greatly reduced by using substrates with larger tilt angles or greater height and density of steps on the surface. We believe that the competition between bonding preference and the surface migration ability of group III adatoms plays an important role in this growth mechanism. By using a long growth interruption, we have also demonstrated that the intensity of the spontaneous ordering can be enhanced which gives us the capability to vary the emission energy of (InP)2/(GaP)2 SPS quantum wells and its dependence on temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368948
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  • 5
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 722-724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step bunching and terrace widening are observed with scanning tunneling microscopy on GaAs(100), tilted 2° toward [1¯10] and [110], after annealing in ultrahigh vacuum at 600 °C. The resulting surface consists of two separate phases, c(8×2) reconstructed terraces and a bunched step region that is either amorphous or (2×6) reconstructed. Average terrace widths increase to 2 or 4 times the nominal average terrace width for a 2° miscut and steps are correspondingly compressed by 40% or 75% depending on the misorientation direction. The observed step bunching is explained by a thermodynamic instability against facetting resulting from a high step energy on c(8×2) reconstructed surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112236
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  • 6
    Electronic Resource
    Electronic Resource
    The directionality of quantum confinement on strain-induced quantum-wire lasers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3469-3472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of Ga0.47−xIn0.53+xAs (x∼0.14) multiple-quantum-wire (MQWR) lasers prepared by the strain-induced lateral-layer ordering process were studied. A typical ratio of threshold current density, ∼10, was observed from the GaInAs MQWR lasers with contact stripes aligned to the [110] ([110] MQWR laser) and the [1¯10] ([1¯10] MQWR laser) directions. The threshold current density of the [110] MQWR laser is ∼30% lower than that of a Ga0.47In0.53As multiple-quantum-well (MQW) reference laser. The 77 K lasing wavelengths were 1.46, 1.57, and 1.69 μm for the MQW laser, the [1¯10] and [110] MQWR lasers, respectively. This strong anisotropy of threshold current densities and lasing wavelengths is the first direct evidence of the directionality of two-dimensional quantum confinement in the MQWR structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366558
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  • 7
    Electronic Resource
    Electronic Resource
    High quality In0.52Al0.48As grown by modulated arsenic molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modulated arsenic molecular beam epitaxy method has been developed for growing high quality In0.52Al0.48As under a condition compatible to the optimal growth condition of In0.53Ga0.47As without using a buffer layer or growth interruption. In this method, the As shutter is periodically opened and closed while the Al and In shutters are held constantly open. By adjusting the As shutter modulation rate, a layer-by-layer growth mode can be maintained throughout the growth as evident from the persistent strong reflection high-energy electron diffraction intensity oscillations. Without an In0.53Ga0.47As buffer layer, the unintentionally doped In0.52Al0.48As samples grown at 500 °C show very strong photoluminescence intensity and n-type conductivity with a background carrier concentration of ∼5×1015 cm−3 and electron mobilities of 1900 and 3900 cm2/V s at 300 and 77 K, respectively. Very narrow 77 K photoluminescence spectra have been observed from In0.53Ga0.47As/In0.52Al0.48As quantum well stack structures grown by this new method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110296
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  • 8
    Electronic Resource
    Electronic Resource
    GaxIn1−xAs multiple-quantum-wire lasers grown by the strain-induced lateral-layer ordering process (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long wavelength (∼1.55 μm) GaxIn1−xAs multiple-quantum-wire (MQWR) lasers have been grown by a single-step molecular beam epitaxy technique. The MQWR heterostructure was fabricated in situ using the strain-induced lateral-layer ordering process. The wire formation was confirmed by cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. The 77 K threshold current densities for the MQWR laser diodes with laser cavities along [110] and [1¯10] directions show an anisotropy ratio of ∼10. Lasers with contact stripes aligned perpendicular to the quantum wire direction consistently show a lower threshold current density than those with stripes aligned parallel. The typical threshold current density for the MQWR laser with a stripe perpendicular to the quantum wires is ∼1 kA/cm2 at 300 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114148
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  • 9
    Electronic Resource
    Electronic Resource
    The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2571-2573 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, a barrier height of ∼0.7 eV is constantly observed from the In0.53Ga0.47As Schottky diodes, regardless of the utilization of different metals as Schottky contacts. By the addition of Pr2O3 and In2O3 in the liquid phase epitaxy, a very low background impurity concentration is also obtained. The low background concentration is credited to the gettering effect from the addition of Pr and oxygen in the growth melt. The high Schottky barrier is attributed to the formation of a stable oxide layer on the surface of the epilayer, which in turn forms a metal-insulator-semiconductor structure in our Schottky diodes. The high Schottky barrier is very stable even at a high measuring temperature and was repeatedly obtained after four months of exposure to the environment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118922
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2386-2388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the photoluminescence (PL) properties of GaxIn1−xAs strained multiple-quantum-wire (MQWR) heterostructures formed in situ by the strain-induced lateral-layer ordering (SILO) process. Samples with moderately strained MQWR active regions demonstrate a negligible variance in emitted PL spectra with respect to temperature. The net temperature dependence of PL wavelength for these samples is less than 0.1 A(ring)/°C between 77 and 300 K. For MQWR samples with stronger lateral composition modulation, the PL peak wavelength blue shifts with increasing temperature. The SILO process induced multiaxial strain in the (GaAs)2/(InAs)2.2 short-period-superlattice active region is responsible for this temperature insensitivity and blueshift of PL wavelength with temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116142
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