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  • 1
    ISSN: 0375-9474
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3727-3730 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the classical oscillator model, the optical dielectric functions for amorphous alumina (a-Al2O3) and gamma alumina (γ-Al2O3) thin films prepared by ion implantation and subsequent annealing of sapphire (α-Al2O3) substrates were determined for the first time from analysis of infrared reflection spectra. Two transverse optical modes at 422 and 721 cm−1 were obtained for the a-Al2O3 film while four modes at 357, 536, 744, and 807 cm−1 were identified for the γ-Al2O3 film. Also, the problems involving the analysis of modes with large damping are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Annals of biomedical engineering 20 (1992), S. 349-362 
    ISSN: 1573-9686
    Keywords: Electrode-electrolyte interface ; Impedance ; Simulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract The impedance of the junction between a solid or aqueous electrolyte and a metal electrode at which no charge transfer processes occur (blocking contacts) follows closely the constant phase angle form, Z=A(jω)-n, over a wide frequency range, where A is a constant, and the frequency exponent n is typically in the range of 0.7 to 0.95. Several models have been proposed in which the magnitude of the frequency exponent n is related by a simple expression to the fractal dimension $$\bar d$$ of the rough electrode surface. But experiments with aqueous H2SO4 and roughened platinum and silicon electrodes show that there is no simple relationship, if any at all, between n and $$\bar d$$ when $$\bar d$$ is determined from the analysis of one dimensional surface profiles. Moreover, n is not a simple function of the average roughness of the electrode. In order to gain some insight into the effect of electrode topography and the interface impedance, a model for the response of the interface to a constant voltage pulse was constructed. This model is based on the idea that, following a pulse, locally concentrated regions of ions accumulate rapidly at the tips of large protrusions on the electrode surface which screens deeper regions of the electrode from the field driven flux of mobile ions. After this rapid charging, ions are able to reach the deeper, screened regions of the electrode by diffusion, and it is this diffusive process that gives rise to the observed t1−n dependence of the charge collected. Computer simulations, similar to the diffusion limited aggregation model, using measured profiles as fixed (non-growing) clusters, gave exponents n in good agreement with experiment.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 12 (1993), S. 1080-1082 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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