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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5263-5272 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth kinetics of epitaxial Ba2YCu3O7−x thin films prepared on (001) SrTiO3 by postdeposition annealing of a chemically derived intermediate layer were investigated in specimens quenched from the growth anneal. The films were produced by spin-on deposition of a metal-organic precursor solution at room temperature and ambient pressure, and subsequent postdeposition annealing to form Ba2YCu3O7−x (BYC). Integrated x-ray intensities of reflections from the majority, c-axis-normal epitaxial BYC in the films were analyzed as a function of time at annealing temperature. Data collected from specimens annealed at 730 and 750 °C were consistent with upward growth of the BYC from nuclei at the substrate surface with a constant growth rate. The linear transformation kinetics suggest the growth process is controlled by molecular processes at the BYC/intermediate interface, and is not rate limited by diffusion. The activation energy for film growth along its [001] axis was estimated to be ∼5 eV. The microstructure of fully annealed films grown on (001) SrTiO3 was, in general, similar to that of films prepared on (001) LaAlO3 using the same metal-organic deposition technique. The volume fraction of the c-axis in-plane epitaxial orientation in films on (001) SrTiO3 was, however, much smaller than in films prepared identically on (001) LaAlO3. Vicinal polishing of the SrTiO3 by as much as 2.5° off [001] in the direction of [101] increased the volume fraction of c-axis in-plane domains in the films somewhat. These domains were preferentially oriented so that their (001) planes were parallel to the steps in the SrTiO3 surface. The fraction of the films on vicinal SrTiO3 occupied by c-axis in-plane domains was, however, still significantly less than that present in BYC films prepared on nominally on-axis (001) LaAlO3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the deposition conditions and the structural and electrical properties of in situ superconducting YBa2Cu3O7−x thin films deposited by off-axis magnetron sputtering has been investigated. High-quality films have been produced with a transition temperature TC (R=0) of 92 K, a critical current density JC (zero field) of 3.3×107 A/cm2 at 4.2 K and 4.8×106 A/cm2 at 77 K, and a microwave surface resistance RS of 2.6×10−6 Ω at 1.5 GHz and 4.2 K which rises to 8.3×10−6 Ω at 77 K. Among the deposition conditions explored, substrate temperature was identified as the most influential in producing these high-quality films. A quantitative relationship was established between substrate temperature and TC, normal-state resistivity ρ, JC, orientation distribution, x-ray-diffraction peak broadening, lattice expansion, RS, and penetration depth λ. Increasing substrate temperature results in an increase in TC, a decrease in ρ, an increase in JC, an increase in grain size, an increase in the ratio of c-axis- to a-axis-oriented grains, and a decrease in λ. The deposition conditions of high substrate temperature and oxygen pressure, used to form films of the highest electrical and structural quality, also promote the formation of CuO precipitates of about 1 μm in dimension, resulting from a slightly copper-rich stoichiometry.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1027-1034 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttria stabilized zirconia films were deposited using ion-assisted, electron beam deposition (IBAD) on pyrex glass substrates heated to 600 °C. Films deposited under these conditions without IBAD exhibit fiber texture such that preferred (100) orientation exists perpendicular to the substrate. The orientation of the films has been studied as a function of ion bombardment angle, deposition rate, ion current density, and ion beam energy. Films deposited with IBAD at bombardment angles of less than 63° display strong (100) preferred orientation perpendicular to the substrate. Films having ion to atom ratios of 0.05 exhibit (220) biaxial alignment in the plane of the film. Best results were achieved for films with deposition rates of 2.4 A(ring)/s, beam energies of 75 eV and ion fluences of 18 μA/cm2. Increasing the beam energy to 300 eV increases the concentration of wire texture in these films. Films deposited at higher ion/atom ratios (0.11 and 0.25) produce films with alignments highly dependent on the angle of ion bombardment. Processing conditions have been shown, therefore, to effect absolute orientation, and not just the quality of the pre-existing orientation. The microstructures of the biaxially aligned films have been studied and this has allowed for a clarification of the growth mechanism of these films. A growth instability of the differing orientations during ion bombardment is shown to cause in-plane alignment rather than preferential etching of misoriented nuclei.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 710-712 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of Ba2YCu3O6.9 films on yttria-stabilized zirconia substrates is shown to proceed by barium depletion from the film and barium zirconate formation. This process is accompanied by a decrease in the temperature of zero resistivity and ultimately produces Y2Cu2O5 and CuO. BaZrO3 is, however, found to be inert to Ba2YCu3O6.9 at 950 °C. Use of a truly chemically inert substrate material may permit extended heat treatment of films without degradation due to substrate interactions.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2282-2287 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The accurate measurement of substrate temperature is important for thin-film deposition processes. In this paper, we report a simple and reproducible method to bond thermocouples directly to a substrate, thus circumventing many difficulties of other temperature measurement techniques. We have ultrasonically bonded 25-μm-diam wires of two different Au-Pt-Pd alloys (14%-31%-55% and 65%-0%-35%), commercially known as Platinel II, to gold bonding pads evaporated onto several surfaces: stainless steel, LaAlO3, Al2O3, and YBa2Cu3O7−x (YBCO) thin films. The ultrasonic bonding process does not change the thermal emf of the thermocouple from the bulk value, and the resultant bond is able to withstand temperature cycling from room temperature to at least 800 °C without detachment of the thermocouple from the surface or change in its thermal emf. We have used these thermocouples to measure the surface temperature of a LaAlO3 substrate and a 2000-A(ring) YBCO film on a LaAlO3 substrate in order to evaluate the effectiveness of silver paste as a thermal contact to anchor substrates to a heater block during the sputter deposition of YBCO thin films. Silver paste is found to provide an excellent contact. At a heater temperature of 750 °C, the temperature difference between the surface of the LaAlO3 substrate and the surface of the heater was 348 °C without silver paste and only 2 °C with silver paste.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 4149-4153 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-flux atomic oxygen source has been developed for the deposition of in situ superconducting high Tc films under conditions that require low chamber pressures (≤10−4 Torr). The source uses a remote microwave plasma to generate the atomic species and is capable of producing an atomic oxygen flux greater than 2×1016 cm−2 s−1. The O2 dissociation efficiency of the atomic oxygen source is measured to be approximately 25%–30% for an O2 flow of 5 sccm. This high efficiency is achieved by the combined effects of a boric acid surface treatment to minimize recombination on the quartz tube and the addition of N2 to the oxygen plasma to increase the atomic oxygen yield. We have developed a treatment for the quartz surface that gives reproducible atomic oxygen flux with no degradation of the surface coating with repeated usage.
    Type of Medium: Electronic Resource
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