ISSN:
1573-8663
Keywords:
chemical solution processing
;
self-assembled monolayers
;
microcontact printing
;
PZT
;
LiNbO3
;
Ta2O5.
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Integrated electroceramic thin-film devices on semiconducting or insulating substrate materials offer a wide variety of attractive attributes, including high capacitance density, nonvolatile memory, sensor/actuator ability, and other unique electrical, electromechanical, magnetic and optical functions. Thus the ability to pattern such electroceramic thin films is a critical technology for future device realization. Patterned oxide thin-film devices are typically formed by uniform film deposition followed by somewhat complicated post-deposition ion-beam or chemical etching in a controlled environment i.e., a subtractive method. We review here an upset technology, a different way of patterning, by an additive approach, which allows for the selective deposition of electroceramic thin layers without such post-deposition etching. In this method, substrate surfaces are selectively functionalized with hydrophobic self-assembled monolayers to modify the adhesion of subsequently deposited solution-derived electroceramics. The selective functionalization is achieved through microcontact printing (μ-CP) of self-assembled monolayers of the chemical octadecyltrichlorosilane on substrates of current technical interest. Subsequent sol-gel deposition of ceramic oxides on these functionalized substrates, followed by lift-off from the monolayer, yields high quality, patterned oxide thin layers only on the unfunctionalized regions. A variety of micron-scale dielectric oxide devices have been fabricated by this method, with lateral resolution as fine as 0.5 μm. In this paper, we review the monolayer patterning and electrical behavior of several patterned electroceramic thin films, including Pb(Zr,Ti)O3 [PZT], LiNbO3, and Ta2O5. A multilevel example is also given which combines selective MOCVD deposition of metal electrodes and sol-gel patterned PZT for Pt//PZT//Pt//Si(100) ferroelectric memory cells.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009947211056
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