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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 560-562 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm3+-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm3+ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm3+-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 124 (1992), S. 470-474 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 622 (1996), S. 573-578 
    ISSN: 0044-2313
    Keywords: Alkylimido-methylgallanes ; synthesis ; NMR vibrational spectra X-Ray structure ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Two New Alkylimido-Methylgallanes with Cage StructureThe tetrameric alkylimido-methylgallanes (MeGa—NR)4 (R = CH(CH3)2 ( iPr), C(CH3)3 ( tBu) and Me = CH3) have been prepared by pyrolyses of the dimeric amido compounds (Me2Ga—N(H)R)2 at 250-260°C. The mass, NMR and vibrational spectra are discussed, they prove almost identical structures of the skeletons. The X-Ray structure determination of (MeGa—NtBu)4 shows four heterocubane molecules in the trigonal unit cell (space group P3c1, a = b = 1061.7(1), c = 3191.8(5) pm) and two disordered benzene solvate molecules. The Ga—N bonds range between 198.4 to 199.9 pm, the Ga—N—Ga and N—Ga—N bond angles lie between 90.6 to 91.4 and 88.6 to 89.2°, respectively. The structure was refined to an R1(R2)-value of 0.049 (0.057).
    Notes: Die tetrameren Alkylimido-methylgallane (MeGa—NR)4 (R = CH(CH3)2 ( iPr), C(CH3)3 ( tBu) und Me = CH3) sind durch Pyrolyse der dimeren Amidoverbindungen (Me2Ga—N(H)R)2 bei 250-260°C dargestellt worden. Die Massen-, Kernresonanz- und Schwingungsspektren werden diskutiert; sie bestätigen weitgehend übereinstimmende Gerüststrukturen. Die Röntgenstrukturanalyse von (MeGa—NtBu)4 zeigt vier Heterocubanmoleküle in der trigonalen Einheitszelle (Raumgruppe P3c1, a = b = 1061,7(1), c = 3191,8(5) pm) sowie zwei fehlgeordnete Benzol-Solvatmoleküle. Die Ga—N-Bindungslängen liegen zwischen 198,4 und 199,9 pm, die Ga—N—Ga bzw. N—Ga—N-Valenzwinkel zwischen 90,6 und 91,4° bzw. 88,6 und 89,2°. Die Struktur wurde bis zu einem R1(R2)-Wert von 0,049 (0,057) verfeinert.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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