Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2250-2252
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the first microwave AlAs/GaAs tunnel emitter bipolar transistor utilizing nonequilibrium electron transport in the base. At an emitter current density of 1×105 A cm−2, current gain of greater than unity is measured up to a frequency of 40 GHz. dc current gains of 82 and 53 are measured for devices with emitter stripe widths of 9 and 1.5 μm, respectively. Enhanced device scaling is made possible with the extremely high velocity in the thin base region.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101139
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