ISSN:
0392-6737
Keywords:
Doping and impurity implantation in germanium and silicon
;
Elasticity, elastic constants
;
Crystal morphology and orientation
;
Point defects (vacancies, interstitials, colour centres, etc.) and defect clusters
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary We have shown through Mössbauer spectroscopy that the electric field gradient (EFG), associated with an atomic defect, is sensitive to the bending of ultrathin Si crystals. The changes in the EFG depend on the bending direction. A direct application is the derivation of the orientation of defects that are located in the crystal’s surface region. We have used this observation for determining the configuration of Co dimers in Si. Based on the bending experiments, the pair axis is found to point in the 〈110〉 direction with respect to the host lattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02458907
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