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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 9 (1987), S. 393-408 
    ISSN: 0392-6737
    Keywords: Electronic properties of specific thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono stati realizzati film dia-SiC:H mediante glow-discharge in atmosfera Ar-SiH4-CH4 con differenti rapporti CH4/SiH4. La concentrazione di H nei film è stata determinate usando la reazione di risonanza1H(15N, αγ)12C ed il contenuto di carbonio mediante spettrometria Rutherford-backscattering. Da misure di trasmittanza e riflettanza nella zona UV-visibile-vicino IR sono state ricavate le costanti ottiche, l'indice di rifrazione, la costante dielettrica, il coefficiente di assorbimento e il gap ottico. Un esame delle bande degli spettri vibrazionali dei vari legami CH, CSi e SiH ottenuti mediante misure di trasmissione nell'IR ha fornito un'interpretazione sulla struttura dei film. Sono state anche realizzate misure di conduttività di buio e di fotoconduttività sotto illuminamento di 500 W/m2. I risultati indicano che all'aumentare del contenuto di carbonio l'indice di rifrazione diminuisce sistematicamente per tutte le lunghezze d'onda, il gap ottico aumenta, la conduttività di buio diminuisce e nella configurazione strutturale tendono a prevalere le catene contenenti il carbonio.
    Abstract: Резюме Ъыли осаждены две системы пленокa-SiC:H в атмосфере Ar-SiH4-CH4, чтобы исследовать переменного отношения CH4/SiH4 на физические свойства. Состав пленок определяется с помощью резонансных ядерных реакций и измерений обратного резерфордовского рассеяния. Также определяются оптичззкся щеяь и показатель преломления с помщяю иемерений пронисаемости в видимойультрафиолетовой-близкой инфракрасной области, конфигурацуя связи с помощью измерений инфракрасной проницаемости и удельное сопротивление и фотопроводимость с помошью єлектрических измерений в темноте м при освешении 500 Bt/M2. Полученные результаты покасывают, что с увеличением содержания углерода показатель преомления систематически уменьшается для всех длин волн, єнергетическая щель увеличивается, темновое сопротивление увеличивается, конфигурация связи становится доминирующей за счет углерод-содержащих цепочек и структура становится более разориентировнной.
    Notes: Summary Two sets ofa-SiC:H films were deposited by glow discharge in an Ar-SiH4-CH4 atmosphere to investigate the effect of a variable CH4/SiH4 ratio on the physical properties. The composition of the films was determined by resonant nuclear reaction and by Rutherford backscattering measurements, the optical gap and the index of refraction by transmissivity measurements in the visible-UV-NIR range, the bonding configuration by IR transmissivity measurements and the resistivity and the photo-conductivity by electrical measurements in the dark and under a 500 W/m2 illumination. Results indicate that with increasing carbon content the refractive index decreases systematically over all wavelengths, the energy gap increases, the dark resistivity increases, the bonding configuration becomes dominated by carbon-containing chains and the structure more disordered.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 13 (1991), S. 435-453 
    ISSN: 0392-6737
    Keywords: Integrated electronics ; VLSI ; Plasma interactions ; Plasma diagnostic techniques and instrumentation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary To investigate the ion flux escaping from the plasma and the impurity flux released by the wall, collector probes made of graphite, silicon and titanium have been exposed to the deuterium plasma confined in the toroidal device ETA BETA II. The damages on the collector surfaces have been surveyed by a scanning electron microscopy (SEM) apparatus. The deuterium and impurity retention have been measured by elastic recoil detection (ERD) and Rutherford backscattering spectroscopy (RBS) techniques respectively. The implantation build-up has been investigated as a function of the exposure time. The deuterium dose in graphite saturates after a few discharges, whereas the metal impurities exhibit a linear increase in time. The deuterium flux and its radial dependence, inferred from the implanted concentrations, have been compared with those measured by Langmuir probes. Metal impurities have been identified and their relative abundances have been compared with the material wall composition. The impurity flux is found consistent with the global content in the plasma derived by spectroscopic measurements. The deuterium dose measured in different samples has been related to the backscattering coefficient of the materials. Finally, to investigate the damage on sample probes facing the plasma particle flow, erosion probes made of vitreous graphite with silver implanted at a fixed depth have been exposed to the plasma and the thickness change after exposure recovered.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    International Journal of Radiation Applications & Instrumentation. Part D, 12 (1986), S. 847-850 
    ISSN: 1359-0189
    Keywords: Fission tracks ; Glass ; Glass dissolution mechanism ; Nomarski interference microscopy ; Track etching
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 68 (1978), S. 368-370 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 721-726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The a-CSiSn alloy produced by rf magnetron sputtering in SiH4, CH4, and Ar atmosphere was studied as a function of the substrate temperature. The composition of the films was determined by elastic recoil detection analysis and by Rutherford backscattering measurements, and the density was then deduced. Results of a study of optical and electrical properties and of the bonding and structure of the films indicate that with the increase of the substrate temperature, the density and the imaginary part of the dielectric constant increases, the optical gap decreases, and the dark conductivity presents a different conduction mechanism depending on the substrate temperature. A correlation between the results obtained from nuclear measurements and IR spectroscopy is presented.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2643-2649 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports the results of structural analysis of proton-exchanged lithium niobate optical waveguides fabricated in Z-, X-, and Y-cut substrates immersed in pure benzoic acid. Rutherford backscattering spectrometry, nuclear reactions, secondary ion mass spectrometry, scanning electron microscopy, and x-ray diffraction were used to measure atomic composition profiles and the marked lattice distortion induced by the proton exchange process in the waveguiding layer. H and Li concentration measurements indicate an exchange of about 70% of the Li atoms are present in the virgin LiNbO3 crystal.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimented with Rutherford backscattering spectroscopy to measure the amount of cesium on the surface of a GaAs photocathode activated in negative electron affinity (NEA) conditions. The surface analysis was performed both immediately after activation of the source in NEA condition and also some time after its total spoiling. Results showed that cesium did not desorb from the GaAs surface. With any further cesium feeding to reactivate the surface, the cesium accumulated on the surface until a saturation level was reached.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Earth and Planetary Science Letters 93 (1989), S. 292-298 
    ISSN: 0012-821X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Electrochimica Acta 25 (1980), S. 1497-1499 
    ISSN: 0013-4686
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0022-3115
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
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