ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract MBE-grown multilayer structures with InAs quantum dots embedded in a crystalline silicon matrix were studied by high resolution transmission electron microscopy. The properties of the grown structures depend critically on the substrate temperature, growth cycle sequence, and layer thicknesses. It is shown that the silicon matrix can “accommodate” only a limited volume of InAs in the form of coherent clusters about 3 nm in size. With an increasing amount of deposited InAs, large dislocated InAs clusters are formed during Si overgrowth, accumulating excess InAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188079
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