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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1601-1604 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity of undoped low-pressure chemically vapor deposited polycrystalline silicon films has been investigated in the temperature range 77–300 K as a function of the deposition conditions of the film. At low temperatures hopping conductivity has been identified. Decrease of the deposition pressure of the polysilicon film shifts the hopping region to lower temperatures and reduces the density of localized trap states and, also, the degree of disorder.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4431-4437 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the grain-boundary barrier height of undoped polycrystalline silicon thin-film transistors is developed based on a rodlike structure of the grains with a square cross section and a Gaussian energy distribution of the trapping states at the grain boundaries. An analytical expression for the threshold voltage is derived in terms of the distribution parameters of the grain-boundary trapping states, the grain size, and the gate oxide thickness. Comparison between the developed model and the experimental drain current versus gate voltage data has been made and excellent agreement was obtained. The key parameters affecting the threshold voltage and the channel conductance of the transistor were investigated by computer stimulation. The threshold voltage is mainly affected by the grain size and the gate oxide thickness. For the improvement of the channel conductance, besides the passivation of the grain-boundary trapping states, the increase of the grain size and mainly the scaling down of the gate oxide thickness are the key factors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 620-622 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of thin-film transistors (TFTs) fabricated from undoped low-pressure chemical vapor deposited polycrystalline silicon under stress conditions (dc voltage and temperature) is investigated. It is demonstrated that the Si-SiO2 interface morphology is critical for the TFT device performance. Device degradation and threshold voltage instabilities are mainly attributed to the roughened Si-SiO2 interface.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 713-715 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise of β-FeSi2/n-Si heterojunctions has been systematically studied with the silicide layer formed by conventional furnace and rapid thermal annealing processes. The noise was found to exhibit 1/f behavior attributed to fluctuations of the generation-recombination current at the interface states. It is shown that noise measurements provide a means of calculating the density and energy distribution of the interface states. The results show that the interface state density is significantly reduced when the silicide is formed by rapid thermal annealing process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2919-2924 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-effect conductance activation energy Ea as a function of the gate voltage Vg is investigated for polycrystalline silicon thin-film transistors. An analytical expression for Ea is obtained for various models of the bulk and interface states. Using a computer minimization program to fit the experimental Ea vs Vg data with the theory, the energy distribution of the bulk states and the interface states are separated for nonhydrogenated and hydrogenated polycrystalline silicon thin-film transistors. In both cases, the bulk states have exponential band tails and a wide peak near the midgap and the interface states have an exponential distribution from the band edge.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4086-4088 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The grain boundary trap state density is evaluated in polysilicon thin-film transistors by a method based on the dependence of the grain boundary potential barrier height on the gate voltage. Assuming a Gaussian energy distribution of the grain boundary trap states, the distribution parameters are determined by fitting the grain boundary barrier height experimental data with the theory. In low-pressure chemical vapor deposited polysilicon films, the influence of deposition pressure on the grain boundary trap distribution is examined by using this method. A large number of traps exist at the grain boundaries near the midgap of the material deposited at lower pressure due probably to an increased impurity contamination.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2177-2183 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model for the turn-on current-voltage characteristics of polycrystalline silicon thin-film transistors is presented. The model is based on the drift diffusion-thermionic emission conduction mechanisms and on a continuous distribution in the energy gap of the traps localized at the grain boundaries. The trap distribution and the device parameters involved in the model are determined by fitting the calculated on-state current versus gate voltage curve to the measured one in the linear region. At large drain voltage, the barrier height at the grain boundary becomes asymmetric and the injection of carriers from the lowered barrier side of the boundary is increased resulting in an exponential increase of the drain current with the drain voltage. Using the parameters obtained from the data in the linear region, the output characteristics are calculated. The good agreement between calculated results and experimental data at room temperature and at higher temperatures demonstrates the validity of the proposed current-voltage model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology of polycrystalline films grown by low-pressure chemical-vapor deposition (LPCVD) is investigated by transmission electron microscopy (TEM) as a function of the film thickness, the deposition pressure, and the level of contamination. An orientation filtering mechanism, due to the growth-velocity competition in the early stage of growth, is responsible for the preferred orientation of the films. The size of the crystallites, the surface roughness, and the type of the structural defects are investigated by combined cross-sectional and plane-view TEM analysis. In polycrystalline silicon thin-film transistors (TFTs), the influence of surface roughness scattering on the mobility is investigated by measuring the effective electron mobility under high effective normal field at 295 and 77 K. Although the surface curvature is increased when the deposition pressure is decreased, the surface roughness scattering is constant in the deposition pressure range from 40 to 0.5 mTorr. By decreasing the deposition pressure from 40 to 10 mTorr, although the grain size increases, the TFT performance degrades due to the following factors: (a) the increase of the grain-boundary trap density which is related to the change of the mode of growth at 10 mTorr; and (b) the increase of impurity contamination in the environment of the LPCVD system with constant silane flow rate at all pressures. At a deposition pressure of 0.5 mTorr the TFT performance is improved indicating that the grain size is the prevailing key factor.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1726-1734 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline iron disilicide thin films are prepared by furnace annealing of electron-beam deposited iron layers. As substrates we use single-crystal silicon wafers, epitaxial silicon thin films on sapphire substrates, and low-pressure chemical vapor deposited polycrystalline silicon thin films on oxidized silicon wafers. X-ray diffraction indicates that orthorhombic β-FeSi2 is obtained for growth temperatures in the range 800–900 °C. Photothermal deflection spectroscopy reveals a direct band-gap of 0.85 eV. Optical transitions at energies above 1.4 eV are investigated by spectroscopic ellipsometry. Measurements of the subgap defect absorption, photoluminescence, conductivity, and of the Hall mobility suggest that lower growth temperatures yield material of better quality.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 862-864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rise in temperature due to Joule-induced heating within undoped polycrystalline silicon resistors is estimated quantitatively when a moderately high electric field is applied. From the experimental results, a phenomenological expression of the rise in temperature in terms of the applied electric field, the geometrical dimensions of the resistor bar, and the resistivity of the polycrystalline silicon thin film is obtained.
    Type of Medium: Electronic Resource
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