ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper is devoted to the results of a diffusion welding technique applied to solve theproblem of packaging for large area SiC Schottky diodes. To supply low defect density substratesfor fabrication of 0.3 cm2 Schottky diodes TDI defect-reducing technology was used. Diodes werefabricated on CVD grown low-doped 4H-SiC single epitaxial layer without edge termination.Double layer Ni-Au and triple layer Ti-Ni-Au sputter metallization were used for Schottky contactsfabrication. Non-rectifying backside contacts were provided by Ni-Au metallization. Diodes weretested on-wafer and delivered for dicing, and packaging. To decrease the parasitic spreadingresistance the thickness of initial sputter metallization was increased by diffusion welded 30 μmmetal foil. Combined thick and plane metal layers make it possible to perform the clamp modepackage used in power electronics. This scheme of packaging ensures current takeoff from thewhole contact area and allows operating temperatures up to 600°C. The forward current-voltagecharacteristics measured at 75 A measured for packaged diodes yields 250 A/cm2 (70A) at 1.9 Vforward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.919.pdf
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