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  • 1
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.40.Hm ; 84.37.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is shown that capacitance spectroscopy can be used to investigate the spin polarization of two-dimensional electronic systems (2DESs). We employed this method to investigate the spin polarization of 2DESs in a GaAs/AlGaAs heterojunction for filling factors of the magneticquantization levels 0.28〈ν〈0.9. It is proved that in the presence of states of the fractional quantum Hall effect with ν f =1/3 and 2/3 the ground state of a 2DES with ν〉2/3 is incompletely spin-polarized.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1090-6487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Experimental investigations of thermally activated dissipative conductivity σxx in the fractional quantum Hall effect at filling factors v=1/3 and near zero were performed with GaAs/AlGaAs heterojunction based field-effect transistors with an electronic channel. To within our accuracy of 10%, the pre-exponential factor measured for v=1/3 is equal to 2e*2/h (e*=e/3 is the charge of the quasiparticles), the value expected for the case when the quasielectrons and quasiholes make the same contribution to the conductivity. The observed change in the temperature dependence of the conductivity when n deviates from 1/3 is associated with the change in the filling of the energy levels of the quasielectrons and quasiholes and indicates that there is no gap in the quasiparticle density of states averaged over the sample.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1090-6487
    Keywords: 85.30.Tv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study is made of the effect of uniaxial mechanical stress on Shubnikov-de Haas oscillations in two-dimensional hole channels of silicon field-effect transistors. It is shown that the main effect of the stress is a shift of the node of the beats of the oscillations. This shift corresponds in the case of compression (tension) to an increase (decrease) of the spin splitting in a zero magnetic field. In the case of two filled size-quantization subbands a mechanical stress of either sign causes a small fraction of the carriers to be transferred from the lower into the upper subband.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    JETP letters 71 (2000), S. 417-421 
    ISSN: 1090-6487
    Keywords: 73.40.Hm ; 85.30.Tv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The formation of regions of compressible and incompressible phases in the quantum Hall effect regime has been considered for a two-dimensional (2D) electron system that is created in a field-effect transistor. This effect arises from long-period fluctuations of the density of ionized donors supplying electrons to the 2D system. It is shown that the motion of these regions caused by variations of the average electron density gives rise to minima in the capacitance of the capacitor formed by the 2D electron system and the transistor gate. When the corrections to the capacitance are small, the shape of the minima reproduces the donor density distribution function. Experimental data are presented that demonstrate good agreement with the predictions of the model.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1090-6487
    Keywords: 73.40.Kp ; 73.50.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The temperature dependences of the zero-magnetic-field resistivity ρ and magnetoresistance of the 2D hole gas in GaAs/(AlGa)As heterostructures are investigated in the temperature interval 0.4–4.2 K. As the temperature T is increased, (i) the resistivity ρ grows with a decreasing derivative dρ/dT, and (ii) the positive magnetoresistance diminishes from about 40% at T=0.4 K to about 1% at T=4.2 K. The results are explained in terms of a temperature-dependent mutual scattering of the holes, accompanied by momentum transfer between two different spin-split subbands.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    JETP letters 68 (1998), S. 732-737 
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.40.Hm ; 75.70.Cn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Self-induced filamentation of the current near the edges of a sample in the Hall geometry has been observed in the quantum-Hall-effect regime in a two-dimensional electronic system arising near a GaAs/AlGaAs heterojunction. If in the case of integer values of the filling factor ν averaged over the sample the currents flowing along opposite edges are approximately the same, then away from such a value within the quantum plateau the current is increasingly concentrated near that edge of the sample where the local value of ν is closer to being an integer. When the direction of the magnetic field or of the current changes, the filament switches to the opposite edge of the sample.
    Type of Medium: Electronic Resource
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