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  • 1
    Electronic Resource
    Electronic Resource
    First dose and steady-state pharmacokinetics of oxcarbazepine and its 10-hydroxy metabolite (1989)
    Springer
    European journal of clinical pharmacology 37 (1989), S. 69-74 
    Details
    ISSN: 1432-1041
    Keywords: oxcarbazepine ; pharmacokinetics ; drug metabolism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The pharmacokinetics of oxcarbazepine (a new anticonvulsant which is a congener of carbamazepine) and of its 10-hydroxy metabolite were studied at the outset of therapy in 8 adult epileptics comedicated with other anticonvulsants. The pharmacokinetic study was repeated under steady-state conditions after 3 months of drug intake in 6 of these subjects. The plasma elimination half-life of oxcarbazepine appeared to lie in the range 1.0–2.5 h, and that of its 10-hydroxy metabolite averaged 8.4 h. The apparent oral clearance of the parent drug (averaging 2.51·kg−1·h−1) was high enough to suggest substantial presystemic elimination. The oral clearance fell after 3 months of drug intake, but the half-lives of the drug and metabolite showed no statistically significant change over this time. Steady-state plasma levels of both drug and metabolite were linearly related to drug dose, metabolite levels averaging 9 times those of the parent substance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00609428
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  • 2
    Electronic Resource
    Electronic Resource
    The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5636-5641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) has been used to study the structural formation of silicon overlayers deposited at room temperature on GaAs(110). In addition spectroscopic measurements were obtained simultaneously to reveal electrical properties associated with the interface and overlayer formation. The Si coverage varied in thickness from submonolayer growth up to ∼16 monolayers. The height variations of the STM images indicate that silicon islands did not exceed ∼3 Å at either submonolayer growth or thicker coverages. The lack of atomic resolution of the adsorbed silicon suggests that the silicon overlayers are amorphous in nature, confirming soft x-ray photoelectron spectroscopy (SXPS) measurements. The scanning tunneling spectroscopy measurements clearly indicate a Fermi shift of 0.8 eV when silicon was deposited on the clean cleaved surface of p+ GaAs(110). This shift is also observed on regions of the substrate which remained exposed after the silicon deposition. The Fermi shifts and resultant band bending are attributed to the formation of the Si–GaAs heterojunction and correlation with earlier SXPS measurements prove favorable. The possibilities of measuring the band offsets are also considered. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371573
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  • 3
    Electronic Resource
    Electronic Resource
    The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2590-2592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy and spectroscopy (STS) have been used to investigate submonolayer Si depositions on clean cleaved GaAs(110). These studies focus on the effect of cleaving-induced step defects on GaAs(110), the resultant Si overlayer formation, and the electrical properties of the substrate/overlayer system formed at 280 °C. STS measurements at a clean step edge on GaAs(110) show that the Fermi level shifts towards midgap for both n and p type, while measurements performed on Si nanoislands at step edges show that the Fermi level reverts back towards its "ideal" position. Results indicate the passivation properties of Si on GaAs(110) when deposited under these conditions. Implications for use in laser facets are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125087
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  • 4
    Electronic Resource
    Electronic Resource
    Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2707-2709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(111)-c(2×8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by ∼0.57 eV, as compared to a negligible valence band offset for the Si/Ge(111) junction. This dramatic modification is interpreted in terms of the charge transfer at the interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121106
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