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  • 1
    Electronic Resource
    Electronic Resource
    Influence of Al-poly Si interactions on electrical properties of MOS capacitors
    Amsterdam : Elsevier
    Physica B+C 129 (1985), S. 255-259 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(85)90580-7
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature ultrasonic attenuation in glassy metals
    Amsterdam : Elsevier
    Physics Letters A 50 (1974), S. 221-223 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(74)90798-1
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of very thin Si oxynitride films produced by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2408-2410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of thin films of SiO2 can be improved by nitridation and reoxidation. They are very sensitive to the nitrogen profile, as well as to other impurities, such as hydrogen or water, for example, which makes it necessary to carefully adjust processing parameters. The purpose of this work is to characterize very thin oxynitride films produced by rapid thermal processing (RTP) and to optimize their electrical properties in view of applying them in electrically erasable programmable read-only memories (EEPROMs). We propose a novel etch-back and test oxidation technique that is very sensitive to traces of nitrogen at the oxynitride/Si interface. We show a strong correlation between the oxidation resistance of the interface and the electrical properties of metal-oxide-silicon (MOS) capacitors fabricated with these films. Nitridation conditions that give a maximal resistance to oxidation (for example, 4 s at 1100 °C) also provide the lowest values of interface charges and traps after reoxidation. Using these processing parameters, we achieve a significant increase in charge to breakdown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101535
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of nitrogen profile on electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7114-7122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacitors. Differences between the two nitridation processes were observed and explained. In lightly nitrided films, nitrogen occupies two configurations. Nitrogen is bound to three silicon atoms with at least one in the substrate or all three in the oxide. In RTP-nitrided films, both of these species are confined to within 1.5 nm of the Si/SiO2 interface. In furnace-nitrided films, the first species is also located close to the interface whereas the second one fills most of the regrown oxide thickness. In furnace-grown films, which are more heavily nitrided, a third structure due to Si2=N–O is observed throughout the layer. The electrical characteristics are well correlated with the amount of nitrogen at the interface that is bound to Si atoms in the substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361481
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  • 5
    Electronic Resource
    Electronic Resource
    Spatially localized energy shifts in the photoemission spectroscopy of insulators (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3710-3713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core-level photoemission peaks taken on several insulators with spatial resolution of 30–300 μm rigidly shift in energy from place to place, most likely because of local charging effects. Such phenomena can affect the linewidth and the general lineshape of conventional, spatially integrated spectra even when a flood gun is used, which is one of the standard remedies against charging. This may require a critical revision of photoemission linewidths and lineshapes for many past experiments on insulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357440
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  • 6
    Electronic Resource
    Electronic Resource
    Clear cell syringofibroadenoma (of Mascaro) of the nail (2001)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 144 (2001), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Eccrine syringofibroadenoma (ESFA) is a rare disorder. We report the first case of ESFA of the nail apparatus, which presented as a yellow longitudinal onycholytic band of the left fourth finger over an intermittently painful subungual filamentous tumour. Histological examination showed features of ESFA with a digitate pattern of papillomatosis due to the specialized physiological longitudinal arrangement of the ridges in the nail bed. In addition, we describe a new feature of colloidal iron-positive clear cells. In our case, the presence of two types of cells with a central ductal differentiation and a significant amount of mucopolysaccharides in clear cells could suggest differentiation towards both the ductal and the secretory portion of the eccrine gland.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2001.04099.x
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  • 7
    Electronic Resource
    Electronic Resource
    Intersubband absorption in Si/Si1−x−yGexCy quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1734-1736 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband absorption in the valence band of Si–Si1−x−yGexCy multiquantum wells is reported. The quantum wells with x≈17% and y≈1% and thicknesses around 3 nm are grown pseudomorphically by rapid thermal chemical vapor deposition on Si(001). The carbon is incorporated in substitutional site using methylsilane as the gas precursor. The quantum wells exhibit near-band-edge photoluminescence with no-phonon and phonon-assisted replica. The energy position of the no-phonon and phonon-assisted replica are shifted to high energy with respect to bulk alloys due to the quantum confinement of the first heavy hole subband. The intersubband absorption between confined subbands is measured in a multipass waveguide geometry under optical pumping. Absorptions for light with an electric field polarized either parallel or perpendicular to the growth axis are observed in both SiGe and SiGeC quantum wells. The absorptions peak at 100 and 130 meV and involve bound-to-bound and bound-to-continuum transitions. The spectral positions of the intersubband absorptions are discussed from numerical calculations accounting for the band gap variation induced by carbon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118013
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of electron heating on electron capture cross section in very small metal-oxide-semiconductor transistors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2233-2235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron heating on random telegraph signals due to oxide traps in deep-submicron n-channel MOSFETs is shown. A simple theoretical model gives a good description of the observed results. The mean capture time depends on the local velocity and temperature of channel electrons near the trap. The difference between the forward and reverse mode (source and drain exchanged) provides an estimate of the trap location along the channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109426
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  • 9
    Electronic Resource
    Electronic Resource
    High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 259-261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced epitaxial Si1−x−yGexCy/Si heterostructures by rapid thermal chemical vapor deposition using methylsilane SiCH6). These layers were grown in the SiH4/GeH4/SiCH6/H2 system between 550 and 600 °C at 1.5 Torr. Suitable process conditions were found that allow very efficient substitutional carbon incorporation. No carbon cross contamination was observed. Crystal quality, chemical composition, and lattice strain were deduced from Nomarski microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and x-ray diffraction. Defect-free alloy layers with compositions of up to 20 at.% Ge and 2.2 at. % C were produced. The lattice parameter was tailored so that the strain in these layers gradually moved from compressive to tensile. A tensile strain of up to 0.35% was achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114686
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  • 10
    Electronic Resource
    Electronic Resource
    Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2120-2122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of silicon oxide and oxynitride were prepared by rapid thermal processing. Under optimum conditions (e.g., nitridation at 1100 °C for 4 s followed by reoxidation at 1150 °C for 60 s), their electrical properties (charge trapping, low-field leakage, and charge to breakdown) were significantly improved over those of the starting oxide. Values of Qbd as high as 260 C/cm2 for a positive current density of 200 mA/cm2 were obtained. Yet, the improvement was much smaller for negative than positive stress. This difference is ascribed to the asymmetrical role of nitridation on the prevention of interface trap generation at high fields and is consistent with models of the generation of interface traps described in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103234
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