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  • 1
    Electronic Resource
    Electronic Resource
    Production of emulsifying agent during growth of Pseudomonas cepacia with 2,4,5-trichlorophenoxyacetic acid (1983)
    Springer
    Archives of microbiology 135 (1983), S. 110-114 
    Details
    ISSN: 1432-072X
    Keywords: Emulsifying agent ; 2,4,5-Trichlorophenoxy-acetic acid ; Pseudomonas cepacia AC1100
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The culture supernatant of Pseudomonas cepacia (ATCC 39027) grown on 2,4,5-trichlorophenoxyacetic acid (2,4,5-T) was found to contain an agent which can emulsify 2,4,5-T. The emulsion is stable for several hours. The emulsifying agent was produced in response to growth on 2,4,5-T, although some emulsification was observed in culture supernatant of glucose grown cells. The emulsifying agent is most active with 2,4,5-T but has some activity towards other chlorinated compounds such as chlorophenols. In growing culture the emulsifying agent adheres to the cell surface as a slimy layer. The emulsifying agent is believed to have a role in transport of 2,4,5-T into the cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00408018
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  • 2
    Electronic Resource
    Electronic Resource
    Silicon-based visible light-emitting devices integrated into microelectronic circuits (1996)
    [s.l.] : Nature Publishing Group
    Nature 384 (1996), S. 338-341 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] FIG. I/A, Micrograph of an integrated LED/bipolar-transistor structure (A, a) along with the cross-section (A, b) and equivalent circuit (A, c). The LED is in the centre of the structure, and has a 400-jim-diameter active light-emitting area. The micrograph shows (centre) a crosshatched aluminum ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/384338a0
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  • 3
    Electronic Resource
    Electronic Resource
    Nanocrystalline-silicon superlattice produced by controlled recrystallization (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline-silicon superlattices are produced by controlled recrystallization of amorphous-Si/SiO2 multilayers. The recrystallization is performed by a two-step procedure: rapid thermal annealing at 600–1000 °C, and furnace annealing at 1050 °C. Transmission electron microscopy, Raman scattering, x-ray and electron diffraction, and photoluminescence spectroscopy show an ordered structure with Si nanocrystals confined between SiO2 layers. The size of the Si nanocrystals is limited by the thickness of the a-Si layer, the shape is nearly spherical, and the orientation is random. The luminescence from the nc-Si superlattices is demonstrated and studied. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120640
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  • 4
    Electronic Resource
    Electronic Resource
    A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3411-3413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved room-temperature electroluminescence (EL) at 1.1 eV from a light-emitting diode with an active layer prepared by high-temperature partial oxidation of electrochemically etched crystalline silicon. The EL is easily measurable under a forward bias ≥ 1 V and a current density 〈10 mA/cm2 and is only weakly temperature dependent from 12 to 300 K. The luminescence is due to Si band edge radiative recombination and originates from large silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117276
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ∼1.5 μm is intense and narrow (≤15 meV) and decreases by less than 50% from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ∼1.5 μm was demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118693
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  • 6
    Electronic Resource
    Electronic Resource
    Stable and efficient electroluminescence from a porous silicon-based bipolar device (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2058-2060 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A complete process compatible with conventional Si technology has been developed in order to produce a bipolar light-emitting device. This device consists of a layer of light-emitting porous silicon annealed at high temperature (800–900 °C) sandwiched between a p-type Si wafer and a highly doped (n+) polycrystalline Si film. The properties of the electroluminescence (EL) strongly depend on the annealing conditions. Under direct bias, EL is detected at voltages of ∼2 V and current densities J∼1 mA/cm2. The maximum EL intensity is 1 mW/cm2 and the EL can be modulated by a square wave current pulse with frequencies ν≥1 MHz. No degradation has been observed during 1 month of pulsed operation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116302
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  • 7
    Electronic Resource
    Electronic Resource
    The nature and significance of liver cell vacuolation following hepatocellular injury — an analysis based on observations on rats rendered tolerant to hepatotoxic damage (1996)
    Springer
    Virchows Archiv 428 (1996), S. 353-365 
    Details
    ISSN: 1432-2307
    Keywords: Hepatocyte cytoplasmic vacuolation ; Glycogen accumulation ; Tolerance to toxic injury ; Adaptation versus degeneration
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Swelling with nonlipid cytoplasmic vacuolation of diffusely distributed hepatocytes is seen consistently after mild acute and subacute liver injury. Several lines of evidence point to the possibility that this change may reflect a cellular adaptation beneficial to the host, rather than a degenerative change. The nature and significance of this morphological manifestation were tested in batches of albino rats given small doses of a variety of hepatotoxins, some of which were subsequently challenged with a large highly necrogenic dose of carbon tetrachloride (CCl4). Morphological and biochemical investigations showed that cytoplasmic vacuolation of liver cells following low doses of toxins was due to excess accumulation of glycogen, predominantly of the monoparticulate form. These cells lacked features of degeneration or regeneration and were much less susceptible to injury by the large dose CCl4, as assessed by structural and serum enzyme analyses. This tolerance to toxic damage seemed to be associated with excess accumulation of intracellular glycogen. We conclude from these and other observations on animal and human livers that many of the vacuolated hepatocytes seen in liver injury are cells adaptively altered to resist further insult rather than cells undergoing hydropic degeneration, as is commonly believed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00202202
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