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  • 1
    Electronic Resource
    Electronic Resource
    Device characterization for amorphous diamond-like carbon–silicon heterojunctions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4634-4636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here on the electrical characterization of Al/a-C:H/n-Si devices, where the a-C:H films were ion implanted with boron. The current–voltage characteristics versus temperature demonstrated the creation of p-n heterojunctions and Schottky diodes. Maximum current outputs were reached faster for higher temperatures. Lower doses of boron implants produced Schottky diode characteristics, with a current saturation in the forward region due to the existing barrier. The values of the output currents increased with temperature and implanted dose. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368690
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of the layered structure on the electronic properties of amorphous carbon films on n-Si (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4446-4451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C) films rich in sp3 bonds were grown onto n-type (100) silicon substrates by rf magnetron sputtering. The electrical defects created in the bulk of the carbon films as well as those at the a-C/Si interface during the deposition of the films were characterized electrically. Devices having the metal–insulator–semiconductor structure were fabricated and investigated by means of current–voltage (I–V) and capacitance–voltage (C–V) profiling and admittance spectroscopy. The construction of the films and in particular the presence of layered and bilayer structures was shown to affect the device characteristics. This behavior was attributed to Ar+ ions trapped inside the carbon bulk as well as to charge deficiencies due to the specific growth conditions of the amorphous carbon layers. The density of the interface states was found to depend considerably on the film construction, ranging from 1011 to 1013 eV−1 cm−2. The dynamic behavior of the states was expressed by the relevant time constant, which was calculated to vary from 10−3 to 10−6 s. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371384
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7192-7196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride (TiN) thin films were deposited by dc magnetron sputtering on SiO2/n-Si substrates in order to study their use as gate electrodes in metal–oxide–semiconductor (MOS) devices. Rutherford backscattering spectroscopy was used to determine the composition of the films and the results were correlated to those obtained by electrical measurements of the constructed MOS devices. Oxygen contamination of the TiN layers was observed, with percentage and spatial variations depending on the various deposition parameters such as the deposition temperature and the substrate bias. The best electrical performance was achieved for devices where the exposed TiN surface had low oxygen contamination. From these samples, the TiNx–Si barrier height was calculated to be equal to 0.52 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322068
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  • 4
    Electronic Resource
    Electronic Resource
    Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3109-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron microscopic studies and the electrical properties of Pt contacts on n-type Si annealed by conventional furnace and rapid thermal annealing (RTA) were investigated with scanning electron microscopy, transmission electron microscopy, x-ray analysis, capacitance-voltage, and deep-level transient spectroscopy measurements. An incomplete reaction between Pt and Si is observed after furnace annealing at 550 °C due to the presence of oxygen in the ambient. An almost complete reaction between Pt and Si is achieved after silicidation by RTA at 550 °C. An acceptorlike level located 0.11 eV below the conduction-band edge with a concentration of 2×1013 cm−3 is detected only after furnace annealing at 550 °C. Silicidation by RTA at 550 °C does not introduce traps in the Si band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349289
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  • 5
    Electronic Resource
    Electronic Resource
    Charge carrier response time in sputtered a-C/n-Si heterojunctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2381-2383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C)/n-Si heterojunctions were developed by rf magnetron sputtering from a carbon target on Si(100) n-type substrates kept at room temperature. Subsequent metallization by the deposition of sputtered TiN on top of the carbon films resulted in the creation of effective heterojunction devices as shown by electrical characterization. The electrical performance of the devices was further investigated by admittance spectroscopy, allowing the calculation of the charge carrier response time which was found to be of the order of 10−6 s at room temperature, the lower value reported so far when compared to similar values reported for chemically vapor deposited films. These results showed that the devices were suitable for use in fast electronics working in hard environments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404403
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1682-1684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (α-C) films were deposited on Si substrates by magnetron sputtering at room temperature, followed by a deposition of TiN on top of the carbon films to form heterojunction devices. The electrical properties of the TiN/α–C/Si devices were characterized by capacitance–voltage, conductance–voltage, and current–voltage measurements as a function of temperature. The results showed that the devices behaved like metal–insulator–semiconductor devices at low temperatures, while at higher temperatures, the carbon films exhibited a high internal conductivity and the overall performance was similar to that of heterojunction devices. The conductivity was adequately modeled and found to follow the thermionic field emission model. The TiN exhibited an excellent behavior as a metallic electrode of the devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352658
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  • 7
    Electronic Resource
    Electronic Resource
    Modeling the fluorescent lifetime of Y2O3:Eu (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2663-2664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphor thermography, relying on the temperature dependence of the decay time of photoluminescence from suitable phosphors, provides remote measurement of the temperature of components. Such a phosphor is yttrium oxide doped with europium (Y2O3:Eu). Associated with this phosphor is also a rise time. Demonstrated is that the rise time is also temperature dependent, as a result of known electronic transitions within the Eu ions. For the phosphor Y2O3:Eu (3.4 at.%), the rise time is an activated process in the temperature region between 25 and 850 °C. Faster than the decay time, the rise time offers the opportunity for measurement of higher velocity components. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121091
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  • 8
    Electronic Resource
    Electronic Resource
    On the interface traps in GaAs Au-refractory barriers
    Amsterdam : Elsevier
    Solid State Communications 73 (1990), S. 29-30 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(90)90008-Y
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  • 9
    Electronic Resource
    Electronic Resource
    Chernobyl fallout on Ioannina, Greece (1986)
    [s.l.] : Nature Publishing Group
    Nature 322 (1986), S. 779-779 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SIR-We have measured the y-ray spectrum of the fallout from the Chernobyl nuclear reactor accident at loannina, located in northwestern Greece, nearly 1,500 km south-west of Chernobyl. We have examined air filters collected every 24 h since 29 April to monitor the y-radiation activity, using an ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/322779a0
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