Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 903-911
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An off-axis device simulator is developed and used to model the distribution of electrons in a thin off-axis sample of p-type silicon. The results from the simulator are validated by matching with the results from an existing analytical model in the low field limit. At high fields, accumulation of electrons can be observed at both sample surfaces causing surface inversion layers there. The individual electron valley current densities are also calculated. It is found that at low values of applied field, the diffusion components govern the current density trends, whereas at high fields the drift components dominate. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369209
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