ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A variety of 4H-SiC samples from undoped crystals grown by the physical vaportransport technique have been studied by temperature dependent Hall effect, optical and thermaladmittance spectroscopy and thermally stimulated current. In most samples studied the activationenergies were in the range 0.9 - 1.6 eV expected for commercial grade HPSI 4H-SiC. However, inseveral samples from developmental crystals a previously unreported deep level at EC-0.55 ± 0.01eV was observed. Thermal admittance spectroscopy detected one level with an energy of about0.53 eV while optical admittance spectroscopy measurements resolved two levels at 0.56 and 0.64eV. Thermally stimulated current measurements made to study compensated levels in the materialdetected several peaks at energies in the range 0.2 to 0.6 eV
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.505.pdf
Permalink