ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which arecompositionally ordered by one or concurrently two sets of {111} planes was carried out for the firsttime under non-equilibrium conditions induced by 1.25 MeV electron irradiation at Tc ≥ 200 oC inthe high voltage electron microscope (JEM-ARM1300S). This microscope installed in the KBSI ischaracterized by an excellent point-to-point resolution of 0.12 nm allowing obtaining detailedinformation on chemical ordering at specific parameters of defocus (-800 Å) and crystal thickness(200~250 Å) determined by extensive HRTEM image simulation for the ordered dots
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.26-28.1195.pdf
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