Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 3396-3398
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Our present work provides a method to control the diameters of the silicon nanowires. As a dominant experimental parameter, the ambient pressure was controlled between 150 and 600 Torr. It is found that the average size of the silicon nanowires increases with increasing ambient pressure. The mean diameter of the silicon nanowires in our study is proportional to the 0.4 power of ambient pressure. Catalytic nanoparticles and the periodic instability of the nanowires suggest a vapor-liquid-solid growth mechanism. For the growth of nanowires, an explanation of the relationship between the mean diameter of the silicon nanowires and the ambient pressure has been proposed. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122778
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