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  • 1
    Electronic Resource
    Electronic Resource
    Structure and properties of reduced barium niobium oxide single crystals obtained from borate fluxes (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 528-534 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00015a031
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  • 2
    Electronic Resource
    Electronic Resource
    Penetration depths of high Tc films measured by two-coil mutual inductances (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2165-2167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fundamental parameter of sample quality in epitaxial films of high Tc oxides is the effective penetration depth λ(parallel) of the superconducting sheet. A contactless audio-frequency method is described, in which an epitaxial YBa2Cu3O7 film is sandwiched between sets of stacked coils, and the procedure is given for computing the complex sheet impedance and hence λ(parallel) from the change in mutual inductance produced by screening currents in the film. Temperature dependence of the complex impedance is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99757
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical activation kinetics for shallow boron implants in silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2658-2660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon implanted with boron at 1015 cm−2 dose and energies from 500 eV to 1 keV were annealed over wide variations in temperature and time to obtain process kinetics and thermal activation energies for shallow junction formation. Diffusion depths and carrier densities were determined by modeling sheet electrical transport. The thermal activation energy for the mean time to produce electrical activation is found to be 5.1±0.1 eV, while for the mean diffusivity it is found to be 4.1±0.1 eV. The 1 eV difference expresses quantitatively the particular advantage of spike thermal anneals at temperatures above 1000 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123929
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  • 4
    Electronic Resource
    Electronic Resource
    Activation and deactivation of implanted B in Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 662-664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal evolution of the electrically active B fraction has been measured experimentally on B implanted Si, and calculated using atomistic simulation. An implant of 40 keV, 2×1014 cm−2 B was examined during a postimplant anneal at 800 °C. The results show a low B activation (∼25%) for short anneal times (≤10 s) that slowly increases with time (up to 40% at 1000 s), in agreement with the model proposed by Pelaz et al. [Appl. Phys. Lett. 74, 3657 (1999)]. Based on the results, we conclude that B clustering occurs in the presence of a high interstitial concentration, in the very early stages of the anneal. For this reason, B clustering is not avoided by a short or low-temperature anneal. The total dissolution of B clusters involves thermally generated Si interstitials, and therefore, requires long- or high-temperature anneals. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124474
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  • 5
    Electronic Resource
    Electronic Resource
    Boron-enhanced diffusion of boron from ultralow-energy ion implantation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2435-2437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 °C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3×1014 and 1×1015 cm−2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123872
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  • 6
    Electronic Resource
    Electronic Resource
    Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1071-1073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spike thermal annealing is examined for electrical activation of B implants into 100 nm Si films deposited over 1.5 to 2.4 nm thermally grown SiO2. These structures simulate gate stacks in advanced p-type metal–oxide–Si (PMOS) devices. Spike anneals, at minimized thermal budget, are shown to yield higher carrier concentrations in PMOS polycrystalline-silicon (poly-Si), as compared to conventional rapid thermal annealing. The activation energy for B diffusion through SiO2 is found to be 3.71 to 3.83 eV and near that previously reported for furnace anneals. Boron penetration appears unaffected by photoexcitation from heating lamps. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1348307
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation and substrate reactions of superconducting Y-Ba-Cu-O films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple metal-target dc magnetron sputter deposition of a metallic YBa2Cu3 alloy in pure Ar followed by ex situ oxygen annealing was used to prepare superconducting films on various substrates. This work particularly examines film-substrate reactions which are degrading to superconductivity. Better superconductors were obtained using predeposited buffer layers, notably on cubic zirconia and MgO substrates covered with Ag and Nb. Best films have Tc=80 K, metallic resistivities with resistance ratio(approximately-greater-than)2, and critical current density (approximately-less-than)10 kA cm−2 at 4.2 K. Normal-state resistivity measurements were made for O2 furnace temperatures up to 850 °C. Procedures for lithographically patterning these films are also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98819
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  • 8
    Electronic Resource
    Electronic Resource
    Anisotropic critical current density in superconducting Bi2Sr2CaCu2O8 crystals (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 72-74 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities and resistivities were measured in a single crystal of the high Tc superconductor Bi2Sr2CaCu2O8 within the ab basal plane ((parallel)) and along the c direction (⊥). A large anisotropy in critical current density is found, Jc(parallel)/Jc⊥≈103, in quantitative agreement with the large normal-state resistivity anisotropy near Tc. The data provide strong evidence for a two-dimensional layered structure of metallic planes separated by semi-insulating barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101437
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  • 9
    Electronic Resource
    Electronic Resource
    Cation termination at ion-polished and chemically etched (001)YBa2Cu3O7 crystal surfaces: An ion channeling study (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 777-779 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local cation order approaching ideal bulk termination was found for cleaned (001) surfaces of YBa2Cu3O7 crystals by ion-channeling surface-peak analysis. Surfaces etched in dilute CH3OH:Br2 and ultrasonically agitated in CH3OH to dislodge the Br2 appear terminated preferentially by the Cu-O "double-plane'' sequence, containing less than 1/2-cation monolayer of surface disorder. Planar polishing with ion beams incident at a glancing angle on a rotating crystal leaves residual disorder as low as ∼8 A(ring), damage which is readily removed by a light chemical etch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104515
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  • 10
    Electronic Resource
    Electronic Resource
    The depolarization and diffusion of μ+ in chromium (1977)
    Springer
    Hyperfine interactions 3 (1977), S. 287-295 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Precession of polarized positive muons is used to probe internal magnetic fields in a polycrystalline sample of high purity chromium. A depolarization, or damping in time, of the precession oscillation is observed in the antiferromagnetic states between 77 K and 312 K. The results are used to obtain the temperature dependence of the muon diffusion rates, with the assumption that the local fields are of dipolar origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01021560
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