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1

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Cd-H pairs in GaAs: Identification and stability (1991)

Pfeiffer, W. ; Deicher, M. ; Keller, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1751-1753

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The Cd-H complex in 111mCd-doped GaAs implanted with low-energy (150–400 eV) hydrogen atoms is identified and studied by perturbed angular correlation spectroscopy using radioactive 111mCd as a probe. By measuring the fraction of Cd-H pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED=1.35(10) eV. After 111mCd implantation but preceding the H loading, the GaAs samples have to be annealed at temperatures exceeding 900 K in order to form Cd-H pairs. These temperatures are in agreement with the temperature range required for electrical activation of Cd implants, suggesting that a Coulombic interaction is responsible for the formation of Cd-H pairs in GaAs.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105079

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2

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Investigation of cadmium-donor pairs in silicon (1989)

Achtziger, N. ; Deubler, S. ; Forkel, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 766-768

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The formation of indium-donor pairs (donors: P, As, Sb) in silicon is identified by perturbed angular correlation spectroscopy. After the electron capture decay of the 111 In probe atoms to 111 Cd, the electric field gradient (EFG) is measured at the corresponding cadmium-donor pairs. For all three complexes a similar temperature dependence of the EFG is observed which can be explained quantitatively by a model based on the charge state of the cadmium-donor acceptors. The corresponding energy levels are given.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102265

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3

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Acceptor-defect complexes in GaAs studied by perturbed angular correlation spectroscopy (1989)

Baurichter, A. ; Deicher, M. ; Deubler, S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 2301-2303

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Acceptor-defect and acceptor-impurity complexes in GaAs have been studied by perturbed angular correlation spectroscopy. In n-type GaAs close Cd-S pairs were formed; the temperature dependence of the related electric field gradient indicates an electrically inactive Cd-S complex. After a hydrogen plasma exposure of GaAs a distinct Cd-defect complex has been observed. Similarly, plasma-induced configurations were also formed in InP and GaP.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102044

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4

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Investigation of cadmium-hydrogen complexes in silicon

Gebhard, M. ; Achtziger, N. ; Baurichter, A. ; [et al.]

Amsterdam : Elsevier

Physica B: Physics of Condensed Matter 170 (1991), S. 320-324

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ISSN: 0921-4526

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(91)90143-3

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5

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Temperature dependence of vacancy-induced electric field gradients in metals

Witthuhn, W. ; Fottinger, H. ; Forkel, D. ; [et al.]

Amsterdam : Elsevier

Physics Letters A 119 (1986), S. 304-308

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ISSN: 0375-9601

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(86)90153-2

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6

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Measurements of spectroscopic quadrupole moments of neutron-deficient Au isotopes with quadrupole-interaction-resolved NMR-ON

Hinfurtner, B. ; Konig, C. ; Hagn, E. ; [et al.]

Amsterdam : Elsevier

Nuclear Physics, Section A 562 (1993), S. 205-217

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ISSN: 0375-9474

Keywords: RADIOACTIVITY

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9474(93)90196-5

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7

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Detection of electronic perturbations in silicon after EC decay of ^1^1^1In observed by PAC

Deicher, M. ; Grubel, G. ; Recknagel, E. ; [et al.]

Amsterdam : Elsevier

Nuclear Inst. and Methods in Physics Research, B 13 (1986), S. 499-502

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ISSN: 0168-583X

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(86)90555-0

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8

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Acceptor-donor pairs in germanium

Forkel, D. ; Achtziger, N. ; Baurichter, A. ; [et al.]

Amsterdam : Elsevier

Nuclear Inst. and Methods in Physics Research, B 63 (1992), S. 217-220

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ISSN: 0168-583X

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(92)95198-Z

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9

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In-beam studies of defect cascades in metals

Iwatschenko-Borho, M. ; Engel, W. ; Foettinger, H. ; [et al.]

Amsterdam : Elsevier

Nuclear Inst. and Methods in Physics Research, B 7-8 (1985), S. 128-134

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ISSN: 0168-583X

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(85)90542-7

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10

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Theg-factor of the Iπ=5/2+ isomer in77Br (1991)

Grawe, H. ; Bertschat, H. H. ; Kowallik, R. ; [et al.]

Springer

The European physical journal 340 (1991), S. 349-350

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ISSN: 1434-601X

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract The g-factor of the t1/2=9.3 ns, Iπ=5/2 + state at Ex=130 keV in77Br has been measured by observation of the time differential perturbed angular correlation (PAC) in a Co single crystal. The experimental value g=1.32(1) gives evidence for large deformation, which is discussed in the framework of triaxial-rotor-plus-particle models.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01294688

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