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  • 1
    Electronic Resource
    Electronic Resource
    Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 553-558 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The effect of phonon confinement and impurity doping in silicon nanowires (SiNWs)synthesized by laser ablation were investigated. The diameter of SiNWs was controlled by thesynthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidationincreases the thickness of the SiNWs’ surface oxide layer, resulting in a decrease in their crystallineSi core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phononpeak due to phonon confinement. Boron doping was also performed during the growth of SiNWs.Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablationwere observed at about 618 and 640 cm–1 by Raman scattering measurements. Fano broadening dueto coupling between discrete optical phonons and the continuum of interband hole excitations wasalso observed in the Si optical phonon peak. These results prove that B atoms were doped in theSiNWs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.553.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 449-454 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics ofmetal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-inducedcurrent (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots underappropriate reverse bias condition when the electron beam energy is high enough to generatecarriers in the silicon substrate. Most of the leakage sites were observed in the peripheries ofshallow trench isolation. These results suggest that some process induced defects are the cause ofleakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterizationfor failure analysis of high-k MOSFETs
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.449.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8361-8367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra and the annealing behavior of hydrogen (H)-point defect complexes in carbon (C)-doped Si after hydrogenation were investigated. Specimens of C-doped Si (C concentration: 1.7×1017 cm−3) were sealed in quartz capsules together with H2 gas and were annealed at a high temperature for 1 h followed by quenching in water. We measured the optical absorption spectra at about 7 K with a Fourier-transform infrared spectrometer. The VH4 (V: monovacancy) defect was almost annealed out at 600 °C. The formation energy of the VH4 defect in C-doped Si was estimated to be about 3.2 eV from the quenching temperature dependence of the 2223 cm−1 peak. The observed 2192 and 2203 cm−1 peaks are probably due to the VH3 defect, which captures one H atom during annealing and become the VH4 defect. After annealing at 700 °C, we observed two absorption peaks at 2093 and 2086 cm−1, which are probably due to Si–H stretching vibration of H on internal surfaces of voids. From these assignments, it was found that V is introduced into C-doped Si at high temperatures, although it is known that C introduces I into Si at high temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373548
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  • 4
    Electronic Resource
    Electronic Resource
    Formation and annihilation of H-point defect complexes in quenched Si doped with C (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4525-4530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the formation and annihilation of H-point defect complexes formed in C-doped Si by heating at high temperatures followed by quenching in hydrogen gas. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, at pressure 0.8–1.5 atm at high temperature, and were heated at high temperature for 1 h followed by quenching in water. We measured their optical absorption spectra at about 7 K with an Fourier transform infrared spectrometer. We observed several optical absorption peaks due to H-point defect complexes. The optical absorption peaks observed at 2192 and 2203 cm−1 were assigned to the Si–H stretching mode of three hydrogen atoms bound to a vacancy (VH3 defect). The formation of the VH4 defect is due to the reaction between H and the VH3 defect. From isothermal annealing experiments, the activation energy for the dissociation of the VH4 defect was determined to be about 2.5 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312841
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  • 5
    Electronic Resource
    Electronic Resource
    Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1848-1853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined the formation energy of self-interstitials in carbon (C)-doped Si from measurements of optical absorption due to hydrogen (H) bound to isolated self-interstitials. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, with pressure being 1 atm at high temperature, and were annealed at high temperature for 1 h followed by quenching in water. We measured their optical absorption spectra at about 7 K with an FT-IR spectrometer. Several peaks coincided with those observed in proton-implanted Si. Hence, we conclude that complexes of simple point defects such as vacancies and self-interstitials with hydrogen atoms existed in those specimens. From the quenching temperature dependence of the peaks identified to be H bound to self-interstitials, the formation energy of self-interstitials in C-doped Si was estimated to be about 3 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370978
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