ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) athigh temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipmentconsists of an infrared annealing unit and a RF induction annealing unit in order to uniformly annealover 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature iselevated from RT to peak temperature (~1800°C) for less than 1 min, remain stable at annealingtemperature for 30s and falls from peak temperature to 1000°C within less than 20s. Thetemperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C,1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples areused to evaluate the performance of the HS-RTA equipment. The five implanted samples placed onthe 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheetresistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/??, 82.6Ω/?? and75.5Ω/??, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The averageroughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra valuesof the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm,respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.803.pdf
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