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  • 1
    Electronic Resource
    Electronic Resource
    Halo structure and soft dipole mode of the ^6He nucleus in the α + n + n cluster model
    Amsterdam : Elsevier
    Nuclear Physics, Section A 575 (1994), S. 93-117 
    Details
    ISSN: 0375-9474
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0375-9474(94)90140-6
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  • 2
    Electronic Resource
    Electronic Resource
    The spin flop of synthetic antiferromagnetic films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5055-5057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin flop of synthetic antiferromagnetic pinned layers (SAF), under a magnetic field has been theoretically predicted and recently reported [J. G. Zhu and Y. Zheng, IEEE Trans. Magn. 34, 1063 (1998); J. G. Zhu, IEEE Trans. Magn. 35, 655 (1999)]. However, no experimental data have yet being reported to confirm the theoretical prediction. This article will provide direct experimental evidence to confirm the spin flop phenomenon in SAF layers. A spin valve, [CoFe/NiFe]/Cu/[CoFe(II)/Ru/CoFe(I)]/IrMn, was used to verify the spin flop in SAF layers. The exchange bias direction of CoFe(I)/IrMn was introduced by a magnetic annealing process at 225 °C with a field strength of Han(10 kOe) and the exchange bias direction was found parallel to the magnetic field. These samples serve as the reference for the remaining experiments. By magnetic annealing the reference samples at 225 °C with lower magnetic fields, we found that the magnetic field threshold for SAF spin flop is about 1 kOe. When the field is further increased, the spins of CoFe(I) and CoFe(II) scissor toward the applied magnetic field axis and the moment of the SAF reaches saturation when the applied field is equal to or greater than 10 kOe. Thus the above experiments demonstrate the flop behavior of the SAF. It also provides direct evidence that the exchange bias direction between a ferro/antiferromagnetic interface is determined by the magnetization of the ferromagnetic layer, not by the magnetic annealing field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373246
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  • 3
    Electronic Resource
    Electronic Resource
    Voltage-induced barrier-layer damage in spin-dependent tunneling junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7362-7364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a dc stress voltage on the junction resistance and magnetoresistance (MR) of spin-dependent tunneling (SDT) junctions with naturally oxidized barriers was investigated. There is a threshold voltage at which irreversible resistance change begins. Beyond this threshold, device resistance decreases gradually over a transition period prior to breakdown of the tunneling barrier. The onset voltage of irreversible resistance change is much higher than the optimum operating voltage of SDT heads having the precursor aluminum thicknesses here investigated (5–11 Å). The MR ratio decreased with increasing stress voltage in a pattern similar to that of the junction resistance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359228
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  • 4
    Electronic Resource
    Electronic Resource
    Spin-valve heads with synthetic antiferromagnet CoFe/Ru/CoFe/IrMn (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5528-5530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-valve (SV) films Si(100)/Ta30/NiFe50/CoFe20/Cu26/CoFe23/Ru7/CoFe20/IrMn50/Ta30 (in Å) exhibit a room temperature (RT) giant magnetoresitance (GMR) ratio of 8.5% with an effective exchange pinning field (Heex) of ∼1.3 kOe and an antiferromagnetic (AF) saturation field (Hs) of ∼6.0 kOe. The synthetic spin valve shows a GMR ratio of 5.0% at 150 °C with Heex〉500 Oe, while a conventional spin valve [Si(100)/Ta50/NiFe50/CoFe20/Cu28/CoFe22/IrMn50/Ta50 in Å] has a GMR ratio of 5.0% with Hex〈200 Oe. The synthetic sample also showed a superior thermal stability with a RT GMR value of 6.9% (compared to 6.1% for conventional sample) after an anneal at 250 °C for 10 h. Shielded narrow track synthetic SV readers demonstrated high amplitude, large dynamic range, and excellent magnetic stability, indicating extendibility for ultrahigh density read head applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369883
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  • 5
    Electronic Resource
    Electronic Resource
    Micromagnetic simulation of tunneling magnetoresistance junctions with parallel hard bias (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7003-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling magnetoresistance (TMR) films and devices were simulated to understand the response of the free layer with a parallel hard bias. In order to determine the effect of the granular hard bias material micromagnetic simulation was used to model both the hard bias and TMR material. Minimizing hysteresis and Barkhausen jumps in the response of the device involves an optimization of the spacing between the free layer and the hard bias coupled with the shape of the device edges. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355331
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  • 6
    Electronic Resource
    Electronic Resource
    Exchange biasing and thermal stability of CoFe/PtPdMn films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4915-4917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sets of PtPdMn exchange biased films Ta 50 Å/CoFe 100 Å/PtPdMn (tAF) Å/Ta 50 Å, with PtPdMn thickness, tAF=350, 600 Å, were deposited on Si substrates by dc magnetron sputtering techniques. After magnetic annealing, these two sets of films exhibited values of exchange bias field, Hex=229 and 254 Oe, respectively. The PtPdMn layer was then thinned to various thicknesses from 600 down to 50 Å by ion beam etching. Hex does not retain its original value. It decreases with decreasing tAF and becomes zero at tAF∼75 Å. In addition, we have observed that the training effect or the anomalous hysteresis loss becomes more pronounced with decreasing tAF. This confirms that not only face-centered-tetragonal phase but, more critically, tAF plays role in determining exchange biasing and its thermal stability. The blocking temperature, TB, appears unaffected by the thinning of the PtPdMn layer, and no apparent change occurs in the local blocking temperature distribution, as suggested by the finite size effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373201
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of ultrathin NiFe and CoFe films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6618-6620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report the magnetic properties of ultrathin (15–200 Å) NiFe and CoFe films deposited using ion beam deposition techniques. They are symmetrically sandwiched between Ta, Cu, or Ta/Cu under and capping layers. NiFe and CoFe films grown between Ta/Cu and Cu/Ta bilayers exhibit the smallest magnetic thickness loss of about 1 Å. This interfacial magnetic dead layer thickness, t0, is about 5 Å for Cu-sandwiched films and about 15 Å for Ta-sandwiched films. As the film thickness becomes thinner than 100 Å, the magnetic properties are found to be more sensitive to the choice of material and growth environment. CoFe films show an interfacial contribution, λi, about ten times larger than that for NiFe films. Among others, NiFe and CoFe films sandwiched by Ta/Cu and Cu/Ta bilayers exhibit the smallest values of λi. The magnetic anisotropy in Ta-sandwiched CoFe films appears to be predominantly magnetoelastic in nature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372789
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  • 8
    Electronic Resource
    Electronic Resource
    High coercivity CoPtCr, CoPt films deposited at high power and high bias conditions for hard bias applications in magnetoresistive heads : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4894-4896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report, for the first time, coercivity values greater than 2000 Oe with Mrt values of 3.0 memu/cm2 for Cr/CoPt12Cr13 and Cr/CoPt20 bilayer films deposited by dc magnetron sputtering at room temperature. CoPtCr films sputtered at a deposition rate of 98 Å/s and high bias voltage showed Hc of 1965 Oe with Mrt of 3 memu/cm2, while CoPt films sputtered at 99 Å/s and moderate substrate bias showed Hc of 2350 Oe with Mrt of 3 memu/cm2. X-ray diffraction studies indicated that Co(10.0) and (11.0) texture leading to in-plane orientation of c axis are promoted in the films sputtered at high deposition rate and bias conditions. Furthermore, the grain-to-grain epitaxy between the Cr underlayer and the Co alloy layer as well as the dense Co grains growing in a columnar shape without voids resulted in higher Hc and Mrt without degradation of coercive squareness. Plots of vs Mrt for films deposited under the optimum bias conditions offer a wide range of useful Hc and Mrt combinations for hard bias applications in magnetoresistive heads. ©1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364870
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