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  • 1
    Electronic Resource
    Electronic Resource
    In-Plane Rotated Crystal Structure in Continuous Growth of Bismuth Cuprate Superconducting Film (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 139 (Apr. 2008), p. 53-58 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Bismuth cuprate superconductor has a unique structure called a structural modulation(supercell, SC) consisting of modulated several unit cells. Strain induced by multilayered structureincreases the intensity of SC modulation, while an oxygen deficient sample shows expansion of SCsize. In this study, as opposed to the multilayer strain, by preparing samples with thick filmthicknesses the effect of strain on crystal structure was investigated including SC structure. Epitaxialgrowth was verified by x-ray diffraction, and the thicker film showed other epitaxial phase rotated 32°around the surface normal with respect to the initial epitaxial phase. The SC size estimated by x-rayreciprocal space mapping was double the size of the initial epitaxial phase. Interestingly, the initialepitaxial phase became a dominant structure after further deposition. In order to evaluate the differentSC size and SC modulation, a new index related with an incline of the modulation vector wasproposed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.139.53.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 320 (Sept. 2006), p. 49-52 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The electrical properties of perovskite-based ferroelectric films were improved by ion modification usingrare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on(111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatilecations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating propertiesof the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and theamount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.320.49.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO〈sub〉3〈/sub〉 Thin Film Prepared by MOCVD (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 157-158 (May 1998), p. 167-174 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/44/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.157-158.167.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of Bi into ZnO Film Prepared by CVD and Its I-V Characteristics (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 157-158 (May 1998), p. 175-180 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/44/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.157-158.175.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Site definition and characterization of La-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6533-6535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of La content on crystal structure and ferroelectric property of La-substituted Bi4−xLaxTi3O12 were investigated. We utilized as-deposited thin films prepared on (111)Pt/SiO2/Si substrates at 680 °C by metalorganic chemical vapor deposition. The films showed (117) preferred orientation, and the lattice spacing of the (117) plane increased with increasing La content. With the aid of Raman spectroscopy, we found a pronounced site selectivity of La ions for the Bi site (A site) in the pseudoperovskite layer. Even for a small content (x=0.2), an incorporation of La ion into the pseudoperovskite layer greatly enhanced both remanent polarization and coercive field, but improved properties were almost irrespective of La content for x〉0.2. For (Bi3.27La0.73)Ti3O12 thin film, we confirmed a good fatigue endurance up to 2×1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417988
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  • 6
    Electronic Resource
    Electronic Resource
    Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3934-3938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The film thickness dependence of the ferroelectricity of c-axis-oriented epitaxially grown Bi4Ti3O12 thin films was investigated. The c-axis-oriented Bi4Ti3O12 films with thicknesses from 35 to 400 nm were epitaxially grown on (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition. The dielectric constant and the coercive field of the films were almost independent of the film thickness. These values were about 151 and 18.8 kV/cm, respectively. The spontaneous polarization Ps was almost constant at 4.0 μC/cm2 and was independent of the film thickness above 140 nm. This value is almost the same as the reported value for the single crystal along the c axis. However, the Ps value decreased with decreasing film thickness below 100 nm. Moreover, the remanent polarization continuously decreased as the film thickness decreased below 400 nm. As a result, the ferroelectric property of the epitaxially grown Bi4Ti3O12 films also depended on the film thickness and was similar to that of simple perovskite-structured ferroelectric thin films, such as Pb(Zr, Ti)O3 and (Pb, La)(Zr, Ti)O3 thin films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352566
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of atmosphere during heating of substrate on the low temperature deposition of metalorganic chemical vapor deposited Pb(Zrx,Ti1−x)O3 thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 898-900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the atmosphere during the heating of a substrate before starting the deposition on the characteristics of the deposited Pb(Zrx,Ti1−x)O3 (PZT) films was investigated. Rhombohedral PZT films were prepared on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) from 415 to 580 °C. PZT films with smooth surfaces and low leakage current densities were obtained when the substrate was heated under an Ar atmosphere at the heating rate of 7 °C/min. Moreover, a crystalline PZT film having good ferroelectricity was obtained at as low as 415 °C when the substrate was heated under the Ar atmosphere, while the film consisted of an amorphous phase when the substrate was heated under an O2 atmosphere. These results clearly show that heating the substrate under an Ar atmosphere before starting the deposition is effective for obtaining a film with a large ferroelectricity at a low deposition temperature for the MOCVD process. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497446
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  • 8
    Electronic Resource
    Electronic Resource
    Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8018-8023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and electrical properties were investigated for (001)- and (116)-oriented SrBi2Ta2O9 (SBT) thin films deposited on (100) SrTiO3 and (100)SrRuO3(parallel)(100)SrTiO3 substrates, and (110) SrTiO3 and (110)SrRuO3(parallel)(110)SrTiO3 substrates, respectively. Both oriented SBT films were epitaxially grown with high crystal perfection, and twinning existed in the (116)-oriented one. Both oriented SBT films were found to form c/6 lattice displacements to relax the stress. The interface of the (001)-oriented film did not include misfit dislocations, defects, and an interfacial layer, and that of the (116)-oriented film included the lattice strain contrast due to an irregular atomic arrangement. The electrical property of the SBT film shows anisotropy of the ferroelectricity along the c- and a-axis directions; the remanent polarizations of the (001)- and (116)-oriented SBT films were 0 and 10.5 μC/cm2, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373490
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation and characterization of Pb(Nb,Ti)O3 thin films by metalorganic chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4559-4564 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead niobium titanate, Pb(Nb,Ti)O3, thin films were prepared on various substrates by metalorganic chemical vapor deposition from the Pb(C11H19O2)2–Nb(O⋅C2H5)5–Ti(O⋅i-C3H7)4–O2 system. Polycrystalline films with (111) orientation and epitaxially grown films with c-axis orientation were deposited on the (111)Pt/Ti/SiO2(100)Si and PbTiO3/(111)Pt/Ti/SiO2/(100)Si substrates, and (100)SrRuO3//(100)LaAlO3 substrate, respectively, at 620 °C. Nb content in the film can be controlled only by changing the input gas flow rate of Nb(O⋅C2H5)5 under the excess gas flow rate of Pb(C11H19O2)2. The composition of the film was independent of the deposition temperature from 400 to 620 °C. The single phase of Pb(Nb,Ti)O3 was deposited up to the Nb content of about 5 at % and pyrochlore phase was codeposited above this Nb content. Leakage current density decreased with the increasing Nb content in the film up to 6.5 at %. Coercive field (Ec) of the film was about 130 kV/cm and was independent of the Nb content and the kinds of substrates. On the other hand, the remanent polarization (Pr) of the film on the (111)Pt/Ti/SiO2/(100)Si substrate increased from 9 to 29 μC/cm2 with the increasing Nb content from 2.1 to 4.8 at %. Pr of the film on the (100)SrRuO3//(100)LaAlO3 substrate was smaller than those of the (111)Pt/Ti/SiO2/Si and PbTiO3/(111)Pt/Ti/SiO2/Si substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371403
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  • 10
    Electronic Resource
    Electronic Resource
    Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1−x)O3 thin films prepared by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4517-4522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Pb(ZrxTi1−x)O3 films with (001) and (100), (101) and (110), and (111) orientations were grown on (100)SrRuO3//(100)SrTiO3, (110)SrRuO3//(110)SrTiO3, and (111)SrRuO3//(111)SrTiO3 substrates, respectively. The two composition films with Zr/(Zr+Ti) ratios of 0.42 and 0.68 were prepared with the Pb/(Pb+Zr+Ti) ratio of 0.5. Well saturated and good square shape hysteresis loops with large remanent polarization (Pr) above 40 μC/cm2 were observed for all films. The Pr increased in the following order: (101), (111), and (001) orientations for the film with the Zr/(Zr+Ti) ratio of 0.42 and (100), (110), and (111) orientations for the Zr/(Zr+Ti) ratio of 0.68. On the other hand, the Ec value mainly depended on the Zr/(Zr+Ti) ratio and not on the orientation of the film; the Ec value of the film with a Zr/(Zr+Ti) ratio of 0.42 was larger than that of 0.68. The saturation behavior did not strongly depend on the orientation, especially for the films with the Zr/(Zr+Ti) ratio of 0.42. The frequency dependence of the dielectric constant was small regardless of the orientation of the films with a Zr/(Zr+Ti) ratio of 0.42. On the other hand, for 0.68, it was also small for the (100) and (110) orientations, but increased by about 15% from 103 to 106 Hz for the (111) orientation due to the relative large leakage. The (101)-oriented film with the Zr/(Zr+Ti) ratio of 0.42 and the (100)- and (111)-oriented films with 0.68 did not show deterioration up to 1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355718
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