ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfullydeveloped in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform.Both room temperature and 300 oC characterizations are presented. The HV JFET shows aspecific-on resistance of 12.8 mΩ·cm2 and is capable of conducting current larger than 3 A atroom temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observedwhen temperature varies from room temperature to 300 oC. The measured increase ofspecific-on resistance with temperature due to a reduction of electron mobility agrees withthe numerical prediction. The first demonstration of SiC power integrated circuits (PIC) isalso reported, which shows 5 MHz switching at VDS of 200 V and on-state current of 0.4 A
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1091.pdf
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