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  • 1
    Electronic Resource
    Electronic Resource
    Electric-field-induced exciton ionization in a GaAs/AlGaAs superlattice (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1759-1762 
    Details
    ISSN: 0392-6737
    Keywords: Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical mutation) ; Excitons and related phenomena (including electron-hole drops) ; Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Optical properties of thin films, surfaces and thin layer structures (including superlattices, heterostructures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined from transient four-wave-mixing experiments and theoretical model calculations. They are found to lie between the field ionization times of excitons in bulk semiconductors, and in strongly confined quantum well systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457276
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  • 2
    Electronic Resource
    Electronic Resource
    Coherent exciton-photon dynamics in single, double, and quintuple quantum wells (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1769-1774 
    Details
    ISSN: 0392-6737
    Keywords: Optical transient phenomena (including quantum beats, dephasings and revivals, photon echoes, free induction decay, and optical nutation) ; Excitons and related phenomena (including electron-hole drops) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We have studied experimentally the coherent exciton-photon dynamics in a single, a double, and a quintuple quantum well structure under resonant excitation. In pump and probe experiments we observe an initial fast decay of the exciton population. This initial decay depends on the number of quantum wells. The population decay is accompanied by a coherent light emission induced by the first-order polarization, the intensity of which increases quadratically with the quantum well number. Interference effects and electromagnetic coupling effects between polarizations located in distinct quantum wells probably play a crucial role in the superlinear coherent emission process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457278
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  • 3
    Electronic Resource
    Electronic Resource
    Homogeneous and inhomogeneous linewidths of excitons in partially ordered Ga0.52In0.48P (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2347-2349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report picosecond four-wave mixing experiments on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112742
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  • 4
    Electronic Resource
    Electronic Resource
    Time resolved photoluminescence studies of perpendicular transport in CdTe/Cd1−xMnxTe short-period superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5272-5274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present time-resolved photoluminescence studies of perpendicular transport and the subsequent capture of photoexcited carriers in II–VI semiconductor superlattices with an enlarged quantum well. The trapping dynamics are investigated as a function of the superlattice period in the range of 30–80 A(ring). We observed an efficient collection of electrons and holes in an enlarged CdTe quantum well confined by a short-period CdTe/Cd1−xMnxTe superlattice. Both the characteristic time and the efficiency of carrier collection are found to be strongly dependent on the superlattice period. A time constant less of than 25 ps is determined for the carrier collection in a 30-A(ring)-period superlattice. Our experimental findings give evidence of Bloch type perpendicular transport in electron and heavy-hole minibands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354270
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier trapping in single quantum wells with different confinement structures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 226-228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The trapping efficiency and trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells with different confinement structures are examined at low temperature by means of picosecond luminescence as well as photoluminescence excitation spectroscopy. The trapping efficiency is 100% only in graded-index separate confinement heterostructures with a linear band-gap profile. The lower trapping efficiency of other confinement structures is due to radiative and nonradiative recombination in the confinement layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98456
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of the picosecond carrier relaxation in silicon-irradiated silicon-on-sapphire films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1850-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the free-carrier relaxation in ion-irradiated silicon-on-sapphire films has been investigated by picosecond photoconductivity measurements in the temperature range 90–295 K. The relaxation time of the photoconductivity decreases markedly with decreasing temperature in samples irradiated with small doses (〈1014 cm−2) of Si ions, whereas nearly amorphized samples show no temperature dependence. This behavior is well described within a multiple-trapping model taking into account structural defects that are built in during the evaporation of the films as well as introduced by the ion irradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339568
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  • 7
    Electronic Resource
    Electronic Resource
    Optical switching in a superconductor–semiconductor–superconductor Josephson junction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 94-96 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Josephson junctions with a two-dimensional electron gas based on InAs/AlSb/GaSb as the barrier. The behavior of the junction during and after illumination with different wavelengths was studied. Due to a persistent positive and negative photoeffect, depending on the excitation wavelength, the carrier density and hence the critical current as well as the normal resistance could be switched between two different stable states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124287
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  • 8
    Electronic Resource
    Electronic Resource
    Investigations of the structural stability of highly strained [(Al)GaIn]As/Ga (PAs) multiple quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2249-2251 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural stability of highly strained [(Al)GaIn]As/Ga (PAs) strained layer superlattice (SLS) structures as a function of the average lattice mismatch is investigated. The SLS structures, grown by metalorganic vapor-phase epitaxy, are studied by using high-resolution x-ray diffraction. The range of stable SLS structures obtained experimentally is compared to a recent theoretical model assuming strain relaxation by formation of misfit dislocations [D. C. Houghton, M. Davies, and M. Dion, Appl. Phys. Lett. 64, 505 (1994)]. In particular, the influence of the surface migration length of the group-III species on the growth surface is investigated by varying the Al concentration in the compressively strained [(Al)GaIn]As layers. Structurally stable [(Al)GaIn]As/Ga(PAs) SLS structures having a total layer thickness of 1 μm and an average lattice mismatch of up to (Δd/d)⊥=1.2×10−2 have been realized. These values exceed by far the values of the misfit dislocation model. This behavior indicates that surface morphology changes rather than misfit dislocation formation are the primary cause for the instability of highly strained SLSs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117143
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  • 9
    Electronic Resource
    Electronic Resource
    Inhomogeneous gain saturation in a mode-locked semiconductor laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 169-171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of the light-dc prebias current characteristic of an actively mode-locked GaAs/AlGaAs semiconductor laser with external resonator reveals a pronounced dependence on lasing wavelength and peak intensity of the mode-locked pulses. The latter effect is attributed to inhomogeneous gain saturation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100164
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  • 10
    Electronic Resource
    Electronic Resource
    Cascade four-wave mixing in semiconductor lasers (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1298-1300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly efficient cascade frequency mixing signals are generated in a nearly degenerate intracavity four-wave mixing experiment in a GaAs/(GaAl)As semiconductor laser. This method allows a consistent quantitative determination of the third-order nonlinear optical susceptibility within the gain bandwidth of a semiconductor laser. The dependence of this susceptibility on light intensity reveals the contribution of the free-carrier plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98708
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