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  • 1
    Digitale Medien
    Digitale Medien
    A study of binary hard core Yukawa mixtures by molecular dynamics and the mean spherical approximation (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5121-5125 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The static bulk properties of several types of binary mixtures of hard spheres interacting through an attractive Yukawa tail are studied by molecular dynamics (MD) simulation, and the results compared with the predictions of the mean spherical approximation (MSA) using the energy, compressibility, and virial routes. For mixtures with components of equal diameter, our MD results differ significantly, under certain working conditions, from recently reported results of Monte Carlo calculations. For both these mixtures and mixtures with appreciable size mismatch, comparison with the MSA results shows that the "exact'' MD data are always more closely approximated by the energy route. These results, which are all consistent with those of a previous study of pure Yukawa fluids, show that, using the energy route, the MSA allows good description of the thermodynamic properties of binary Yukawa mixtures, even in situations departing considerably from ideality.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.463834
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  • 2
    Digitale Medien
    Digitale Medien
    Structure and thermodynamics of mixtures of hard D-dimensional spheres: Overlap volume function approach (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5132-5141 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A very simple ansatz for the partial direct correlation functions of binary mixtures of hard D-dimensional spheres, which allows a unified treatment of both the odd and even space dimensionalities D and reduces, for D=1 and D=3, to the Percus–Yevick theory is presented in this paper. A generalized Carnahan–Starling equation of state is proposed, which is in excellent agreement with the available computer simulation results. Finally, two generalized Verlet–Weis procedures for the partial pair distribution functions gij(r) are proposed. The interesting case of hard disks (D=2) is studied in detail leading to excellent results for the gij(r).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.463810
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  • 3
    Digitale Medien
    Digitale Medien
    Periodically kicked hard oscillators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 51-62 
    Details
    ISSN: 1089-7682
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model of a hard oscillator with analytic solution is presented. Its behavior under periodic kicking, for which a closed form stroboscopic map can be obtained, is studied. It is shown that the general structure of such an oscillator includes four distinct regions; the outer two regions correspond to very small or very large amplitude of the external force and match the corresponding regions in soft oscillators (invertible degree one and degree zero circle maps, respectively). There are two new regions for intermediate amplitude of the forcing. Region 3 corresponds to moderate high forcing, and is intrinsic to hard oscillators; it is characterized by discontinuous circle maps with a flat segment. Region 2 (low moderate forcing) has a certain resemblance to a similar region in soft oscillators (noninvertible degree one circle maps); however, the limit set of the dynamics in this region is not a circle, but a branched manifold, obtained as the tangent union of a circle and an interval; the topological structure of this object is generated by the finite size of the repelling set, and is therefore also intrinsic to hard oscillators.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.165978
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  • 4
    Digitale Medien
    Digitale Medien
    Disease-free interval and recurrence pattern after the Okabayashi variant of Wertheim’s radical hysterectomy for stage IB and IIA cervical carcinoma (1996)
    Suite 500, 5th Floor, 238 Main Street, Cambridge, Massachussets 02142, USA : Blackwell Science Inc.
    International journal of gynecological cancer 6 (1996), S. 0 
    Details
    ISSN: 1525-1438
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: From January 1982 to December 1991 271 patients underwent radical hysterectomy according to the Okabayashi modification for cervical carcinoma stage IB and IIA. Intraoperative complications occurred in 3.3%. The urinary fistula rate was only 2.2%. The 5-year Disease-free Interval (DFI) was 90%. In a univariate analysis tumor size 〈inlineGraphic alt="geqslant R: gt-or-equal, slanted" extraInfo="nonStandardEntity" href="urn:x-wiley:1048891X:IJG06020120:ges" location="ges.gif"/〉 3 cm (n = 99), positive pelvic nodes (n = 53), adenocarcinoma (n = 58) and parametrial involvement (n = 36) were all associated with a significantly decreased DFI. Recurrence occurred in 27 patients (10%) of whom 22 died of disease. In adenocarcinoma, DFI was poor when positive pelvic nodes were present. In squamous cell carcinoma however, DFI was not influenced by pelvic node status. In patients with squamous cell carcinoma the locoregional recurrence rate was 3.4% when pelvic nodes were negative, whereas in those with positive nodes it was 5.8%. These data show that the Okabayashi modification of Wertheim’s radical hysterectomy is a safe procedure resulting in very good locoregional tumor control, especially in patients with squamous cell cancer of the cervix.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1525-1438.1996.06020120.x
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  • 5
    Digitale Medien
    Digitale Medien
    Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3632-3634 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comparison between compositionally stepped and alternating step-graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The latter shows higher efficiency in relieving the strain. A simple balance force model permits us to understand the reason for a higher generation of threading dislocations observed in the alternating step-graded structures. The presented results can be applied as new design rules for buffer fabrication that contrast in some key points with previous published rules as, for example, the "zero-net-strain'' precept [D. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, L. González, Y. González, A. Sacedón, and F. González-Sanz, Appl. Phys. Lett. 65, 845 (1994)]. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115341
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  • 6
    Digitale Medien
    Digitale Medien
    Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1875-1877 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using previously published relaxation models [D. J. Dunstan, P. Kidd, L. K. Howard and R. H. Dixon, Appl. Phys. Lett. 59, 3390 (1991) and D. González, D. Araújo, G. Aragón, and R. García, Appl. Phys. Lett. 71, 2475 (1997)] that predict the strain relaxation in the InGaAs/GaAs system, before and during the stage of relaxation saturation, the critical thickness where dislocation interactions begin to limit the plastic relaxation is estimated. The approximations used to deduce an analytical expression are shown to be appropriate for describing the regime of relaxation considered. A good agreement with experimental data previously published by other authors permits a physical explanation for the different observed regimes of relaxation to be given. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121212
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  • 7
    Digitale Medien
    Digitale Medien
    Work-hardening effects in the lattice relaxation of single layer heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A modelization of the strain relaxation in single heteroepitaxial layers is presented in this letter. The calculations consider the energetic variations of the heteroepitaxial structure when introducing one new dislocation into the existing interfacial array of fixed misfit dislocations without continuous readjustment of the spacing array. The interaction energy of the new dislocation with both lattice mismatch and dislocation array is shown to be the limiting factor that controls the mechanism of strain relaxation at the saturation stage of relaxation. The model is shown to be in good agreement with the lattice relaxation behavior of previously published strain/thickness data. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120092
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  • 8
    Digitale Medien
    Digitale Medien
    Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2649-2651 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ternary and quaternary semiconductor alloys are usually limited in their band gap engineering by problems related to modulation of composition. In this contribution, we point out the importance of the growth rate in the evolution of a modulation profile in epitaxial films. As a consequence, a diagram of phases for the epitaxial growth is proposed where a window of homogeneous composition is evidenced at low temperatures of growth. The model provides a framework for the epitaxial growth where temperature and growth rate regulation permits the control of the composition modulation in heteroepitaxies. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123926
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  • 9
    Digitale Medien
    Digitale Medien
    A work-hardening based model of the strain relief in multilayer graded-buffer structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3099-3101 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This paper describes the modeling of the dislocation distribution and of the strain relief in linearly and step-graded structures, based on work-hardening considerations. The model considers the energy variation in an InGaAs/GaAs system upon introducing a new dislocation into the interfacial fixed array of misfit dislocations. An analytical expression for the strain relaxation in graded-buffer structures is proposed. Transmission electron microscopy observation confirms the model predictions and reveals that the saturation state of relaxation is reached in the buried layers. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120258
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  • 10
    Digitale Medien
    Digitale Medien
    Control of phase modulation in InGaAs epilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3236-3238 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A theoretical description of the phase modulation state of epitaxial InGaAs layers has been recently published [D. González et al. Appl. Phys. Lett. 74, 2649 (1999)]. To verify experimentally the deduced phase diagram, InGaAs structures with In compositional steps were grown using different growth conditions. Transmission electron microscopy studies have revealed the modulation state in each layer and have allowed us to define the experimental In composition and temperature dependence of the phase transition. The results show that InGaAs layers with and without composition modulation can be obtained by changing the growth temperature. An excellent agreement with the model predictions is observed. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126592
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