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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5759-5764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a peel strength of larger than 70 g/mm adhesion can be achieved between Cu and Parylene-N surfaces using the partially ionized beam (PIB) deposition technique while the conventional deposition techniques such as thermal evaporation, e-beam evaporation, and sputtering give no measurable adhesion. With the PIB process, neither an adhesion enhancement layer nor substrate pretreatment is required. In the PIB deposition, up to 5% of self-ions and 3 kV substrate bias were used during deposition. Secondary-ion-mass spectroscopy revealed a Cu–Parylene-N intermixed layer located at the Cu/Parylene-N interface. It is proposed that the mechanical interlocking provided by the graded interface region may play a role for the observed adhesion enhancement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1824-1826 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the diffusion of Cu into the Ni layer of a Ni/Cu bilayer film after thermal annealing is significantly reduced when the deposition temperature of the Ni layer is raised from approximately 50 to 200 °C. The effect of the deposition temperature on the physical structure of the Ni layer and the possible connection between the Ni layer physical structure and the diffusion reduction are investigated. The effect of the diffusion on the resistivity of the Cu layer is also studied.
    Type of Medium: Electronic Resource
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