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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Machine vision and applications 8 (1995), S. 79-84 
    ISSN: 1432-1769
    Keywords: Slit-ray projection ; Position-sensitive device ; 3D range data ; High-speed range finders
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Abstract A new system for high-speed and continuous 3D measurement is presented. It is based on the slit-ray projection method. The key component is the image plane constructed by a position-sensitive device (PSD) array that is horizontally un segmented and linear, but vertically numbered. All PSD row elements are attached to their respective analog signal processors. The analog signals are multiplexed and digitized by multiplexers and A/D converters at appropriate sampling intervals and stored in memory. By virtue of this configuration of the image plane, basis data for 3D measurement are acquired during only one scan of the slit ray at high speed in the form of memory addresses and data. Moreover, if we use large capacity and/or dual port memories, we can continuously obtain 3D range data for as many scenes as needed. The trial system has been implemented with a newly designed 128-channel PSD array and has verified our method, enabling us to obtain successive 3D range data at video rates with an error within±0.3%.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0922-338X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6145-6145 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Ba ferrite films are promising media for magneto-optical (MO) recording because they have strong perpendicular magnetic anisotropy. However, MO activity of the Ba ferrites is low, which makes the feasibility as a practical medium poor. The MO activity is reported to be prominently enhanced by specific ions such as Bi3+, Co2+, and light rare earth ions in garnet ferrites, while, in Ba ferrites, the MO enhancement ions except Co2+ have not yet been known. We have recently found that Ni2+ substitution also enhances Faraday rotation in the visible region around hν=2.5 eV. In this paper we describe MO properties as well as microstructures of Ba1−xMxFe12−xNixO19 (M=La, Pr, x=0, 0.3, 0.6) films prepared by rf sputtering. The films were deposited on Gd3Ga5O12 (GGG) single crystal substrates at substrate temperature (Ts) of 400–600 °C by the conventional rf diode sputtering. When Ts≥550 °C for the incident rf power over 19 W/cm2, the films in situ crystallized in Ba–ferrite single phase. They had c-crystal axis well oriented normal to the film plane. The SEM and TEM observations revealed that the grain size in the films increases from several nm to ∼300 nm with increasing the incident power. The films with larger grains showed higher saturation magnetization and lower coercivity. Faraday rotation of the films was clearly enhanced in the visible around 2.5 eV with increasing Ni2+ substitution, though they showed rather complicated spectral structure inherent to the Ba ferrites. The enhancement factor of specific Faraday rotation at 2.5 eV was as large as 2×104 deg/x, independent of the kind of the rare earth ion substituted for Ba2+ for charge compensation. This implies that the substitution of the rare earth ion itself enhances no Faraday rotation in Ba ferrites. Thus, the MO enhancement around 2.5 eV may be attributed to the octahedrally coordinated Ni2+.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6146-6146 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Off diagonal terms (which give magneto-optical effects) of "effective dielectric tensor'' of composite material with magnetic fine particles dispersed in a dielectric matrix have been derived by the authors.1 In this study, we extended the effective tensor to the composite in which surface-oxidized metal ferromagnetic fine particles are clustered in the matrix. We proposed "magnetic cluster model'' as follows. The surface-oxidized metal particles of size d, which is much smaller than light wavelength λ (d(very-much-less-than)λ), aggregate in the matrix to form the magnetic clusters of average size D which is much larger than the wavelength (D(very-much-greater-than)λ). The composite as a whole contains the magnetic clusters at a volume fraction of F(0〈F〈1). In the cluster the surface-oxidized metal particles are dispersed at an average volume fraction of f(0〈f〈1). The surface-oxidized metal particles contain metal at an average volume fraction of g(0〈g〈1). Since d(very-much-less-than)λ, we can apply to the magnetic fine particle the effective dielectric tensor, in terms of which we can calculate the effective dielectric tensor of the magnetic cluster. On the contrary, we cannot apply the effective tensor to the composite as a whole, because D(very-much-greater-than)λ. However, Faraday rotation of the composite is given by F times the Faraday rotation of the magnetic clusters which is expressed in terms of the effective dielectric tensor of the cluster. Faraday rotation spectrum was measured at λ=0.5–0.8 μm for a composite film (0.25 μm in thickness) in which Ni fine particles (∼20 μm in size) were dispersed in PVC (polyvinyl chloride) matrix by spin coating. The result was successfully interpreted by our magnetic cluster model assuming parameters F=0.15, f=0.78, g=0.9, which conforms to our experimental conditions.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5126-5131 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hexaferrite thin films of Ba1−xRxFe12−xNixO19 (R=Pr, La) were grown on nonmagnetic garnet substrates by rf sputtering. When deposited at a substrate temperature of 550 °C at rf power density (PDrf) larger than 19 W/cm2, the films were completely crystallized, with the c axis preferentially oriented normal to the film plane. Transmission electron microscopy revealed that the films deposited at low PDrf were amorphous but locally contained microcrystallites several nm in size. On the other hand, the films deposited at PDrf larger than 20 W/cm2 were polycrystalline with a crystallite size as large as 300 nm. Faraday rotation measurements showed that the Ni substitution induced a large negative rotation in the photon energy range of 2.1–2.6 eV. This Ni contribution was predominantly attributed to the crystal-field transition of octahedrally coordinated Ni2+ ions lying in the 2 eV range. No contribution by Pr3+ ions to the Faraday rotation was observed within the photon energy range measured. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6804-6804 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cerium substitution to iron garnet strongly enhances magneto-optical (MO) effect in the visible region around hν=1.4 and 3.1 eV. We have previously proposed a Ce3+(4f)-Fe3+ (tet.) charge transfer model as an electronic transition inducing the strong MO effect. In this study, we have measured Faraday spectra of CeYIG films in which Fe ions were diluted with Al or In ions. These ions, respectively, are known to preferentially occupy tetrahedral and octrahedral iron sites in the garnet structure, giving us some information on the role of Fe3+ in the MO enhancement. The Y2Ce1Fe5−xMxO12 (M=Al, In; x=0–5) films were epitaxially grown in situ on (111)-oriented Gd3Ga5O12 (GGG) single crystal substrates by conventional rf diode sputtering. With the amounts of substitutions increasing, Faraday rotation and ellipticity of the films at hν=1.4 eV reduced at nearly the same rates for both ions of Al and In. We found from the analysis using molecular field theory that these reductions are in proportion to the magnetic moment of the tetrahedral iron sublattice. This indicates that the tetrahedral Fe3+ contributes to the electronic transition at 1.4 eV, supporting the proposed charge transfer model.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6414-6414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently we succeeded in growing epitaxial films of Ce-substituted iron garnet (Y3−xCexFe5O12) with so much substitution as up to x=1.5, which strongly enhances magneto-optical (MO) effect in the near IR region around hν=1.4 eV.1 The enhancement per Ce ion surpasses that by Bi3+ ion in the IR region which has been the champion of the MO enhancement for 20 years. In this study we have measured the Faraday effect of the Ce-substituted garnet films in an extended photon energy range of hν=1–4 eV in order to elucidate the role of Ce3+ in the MO enhancement. The films (R3−xCexFe5O12: R=Y, Gd, Yb, x=0–3.0) were epitaxially grown in situ on Gd3Ga5O12 (GGG) and Nd3Ga5O12 (NGG) single-crystal substrates by conventional rf diode sputtering. For R=Y the Ce substitution was successfully extended to x=2.5 by sputtering under the reduced atmosphere of Ar+H2. The Ce substitution prominently enhanced Faraday effect not only in the IR region at hν=1.4 eV but also in the UV region at hν=3.1 eV, both having a paramagnetic dispersion relation with nearly equal magnitude though opposite in sign. We also found a new optical absorption due to Ce3+ at hν =2.0 eV which does not enhance the Faraday effect.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6301-6303 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline films of Y3−xBixFe5−yAlyO12 (x=0.5–2.0, y=0–1.2) were prepared on glass substrates by pyrolysis combined with spin-coating techniques. SEM and TEM studies revealed that the grain size increases with x but decreases with y. This means that enhancing the magneto-optical effect by increasing x results in large grain size, which causes a strong media noise due to light scattering at grain boundaries. To solve this problem we have made double-layer films. An underlayer of polycrystalline film low in x, hence small in grain size, was first made by a conventional pyrolysis process. On this an upper layer high in x was made. The upper layer was crystallized at a temperature ∼50 °C lower and was ten times smaller in grain size than the single-layer film with an equal x. Furthermore, the upper layer crystallized at the lower temperature (590 °C) was exceedingly homogeneous.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7065-7067 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Faraday rotation and ellipticity spectra were measured at photon energies hν=0.9–4.0 eV for R3−xCexFe5O12 (R=Y, Gd, Yb) films with substitutions up to x=2.5, expitaxially grown by rf sputtering. The Ce substitution prominently enhances the Faraday effect not only in the IR region at hν=1.4 eV but also in the UV region at hν=3.1 eV. Both transitions have a paramagnetic dispersion relation, which are nearly equal in magnitude but opposite in sign. Optical absorption is also induced by a new transition due to Ce3+ at hν=2.1 eV, which does not enhance Faraday rotation. These electronic transitions may be attributed to charge transfer transition Ce3+(4f)-Fe3+(tet.).
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4768-4771 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the growth conditions and electrical properties of MgO epitaxial thin films, which have potential applications as insulating layers for spin-dependent tunneling devices where Fe3O4 serves as one of the magnetic electrodes. Our investigation showed that epitaxial MgO films with high crystalline quality can be successfully grown at temperatures as low as 473 K in oxygen pressures less than 1×10−5 Torr. This is a very important result because it indicates that the oxidation of the underlying Fe3O4 electrode is not a factor in fabrication of spin-dependent tunneling devices. We also examined the electron tunneling properties of Au/MgO/Fe3O4 junction with an ultrathin MgO layer prepared under the conditions described above and found excellent electron tunneling properties, as will be discussed. Barrier height and thickness estimated by curve fitting current density–voltage curves using the Simmons equation yielded barrier height and thicknesses of 0.9 eV and 2.5 nm, respectively. These values were consistent with those estimated by taking into account the reduction of the barrier height due to image forces. These results indicate that the MgO insulating layers grown under the restricted conditions have satisfactory electrical qualities required for spin tunneling devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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