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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3760-3762 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report magneto-photoluminescence measurements on stacked self-assembled InAs quantum dots. By applying a magnetic field parallel to the growth direction, we determined the exciton reduced mass and exciton radius from the photoluminescence (PL) peak energy. We observed an asymmetric increase of the full width at half maximum of the quantum dots PL peak to the high-energy side that we associate to the size selectivity of the oscillator strength of the ground state transitions. The observed increase of the integrated intensity of the quantum dots line is explained in terms of the reabsorption of the photons emitted by the GaAs substrate and the InAs wetting layer. These effects are related to the multilayer structure of the sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4259-4262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the characteristic temperature T0 on the cavity length and lasing wavelength is theoretical and experimentally analyzed. The devices are straight separate confinement heterostructure lasers with active layer thickness of 30 and 12 nm grown by low temperature liquid phase epitaxy. The recent observation that for very short lasers T0 is an increasing function of the cavity length is confirmed, and explained in terms of the threshold current cavity length dependence. The temperature dependence of the threshold current Ith gives T0 as high as 307 K for a quantum well laser with cavity length L=168 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3796-3797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the peak power conversion efficiency ηcpeak on the cavity length and lasing wavelength is theoretically and experimentally analyzed for straight separate confinement heterostructures AlGaAs lasers with an active layer thickness of 30 nm. A simple model that considers the dependence on cavity length of different diode parameters was used for theoretical estimations. The internal quantum efficiency is considered cavity-length dependent. It was found that the optimum cavity length which maximizes the power conversion efficiency depends upon the laser emission wavelength. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3764-3769 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012 cm−2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10−12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3400-3402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experiments aimed at producing three-dimensional self-organization in InAs quantum-dot multilayers embedded in GaAs. These InAs/GaAs quantum-dot multilayers have been grown by molecular beam epitaxy. Employing atomic force microscopy, we have analyzed the island density in samples with different number of periods of InAs/GaAs bilayers The results reveals a decrease and a tendency to saturation of the island density with an increase in the number of periods, as a three-dimensional self-organization characteristic of these samples. Optical properties of the samples are examined via photoluminescence spectroscopy. The evolution of the quantum-dot photoluminescence peak position indicates an increment in the mean size of the buried islands and a relative homogenization in size of the quantum dots, as the number of periods increases. The results of the optical measurements agree with the morphological data, and characterize a spatial process of self-organization, related to the increment of the number of periods in the multilayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1567-1569 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority-carrier diffusion lengths of electrons and holes were measured in a GaN-based light-emitting diode using the electron-beam-induced current technique in the line-scan configuration. A theoretical model with an extended generation source and a nonzero surface recombination velocity was used to accurately extract the diffusion length of the p- and n-type layers. A minority-carrier diffusion length of Ln=(80±6) nm for electrons in the p-type GaN layer, Lp=(70±4) nm for holes in the n-type GaN:Si,Zn active layer, and Ln=(55±4) nm for electrons in the p-type Al0.1Ga0.9N layer were determined. The results from this model are compared with two simpler and widely used theoretical models. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1056-1058 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of vertical alignment of InAs quantum dots in InAs/GaAs(001) multilayers was studied using grazing incidence x-ray scattering. We show that it is necessary to access one of the weak (200) x-ray reflections to observe the modulation of the GaAs lattice periodicity produced by the stacking of the InAs dots. The degree of alignment of the dots was assessed by fitting the x-ray diffuse scattering profiles near a GaAs (200) reciprocal lattice point. By using a model of gaussian lateral displacement of the dots, we show that we can determine the average value of the mistake in stacking positions of the islands from one bilayer to the next. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 6 (1987), S. 111-112 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Astrophysics and space science 171 (1990), S. 319-322 
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract So as to meet the requirements of high spatial resolution techniques, two data acquisition interfaces for ITV and IPD detectors have been developed. These permit a synchronized and simultaneous observation between both of them. The synchronized temporal resolution is 20ms, as well as the data of the ITV, while the reading interface from the IPD permits a temporal resolution of 50μs. The ITV signal is stored on the video-recorder while the IPD interface is developed through transputers which store the data, with the time tags, on computer disc.
    Type of Medium: Electronic Resource
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