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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 99-100 (July 2004), p. 49-54 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Optical communication wavelength emissions from the quantum dots (QDs) structures prepared on (001)-oriented GaAs substrates are discussed. A new growth technique of low-stressed InAs QDs on the AlGaSb layer in a low lattice-mismatched (1.3%) InAs/AlGaSb system is presented. The average height and diameter of the 4-ML InAs QDs on AlGaSb are evaluated to 5.8 nm and 45.2 nm respectively with an average density of 2.18 x 1010 /cm2 using atomic force microscope (AFM) measurements. There is structural selectivity between the QDs layer and the flat hetero-interface under changing growth conditions in the InAs/AlGaSb system. Long-wavelength PL emissions around 1.3 µm and 1.55 µm can be achieved by embedding InAs QDs in AlGaSb layers. Therefore it is expected that low-stressed InAs QDs grown on a AlGaSb layer prepared on a GaAs substrate will be useful in the fabrication of novel QDs devices for optical-communication networks
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8017-8021 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amounts of spontaneous spin splittings were estimated from low-temperature magnetoresistances in two-dimensional electron gases created at In0.75Ga0.25As/In0.75Al0.25As heterojunctions under a gate bias. Typical sheet electron densities and mobilities in the raw wafers were ∼1.0×1012/cm2 and 2–5×105 cm2/V s at 1.5 K, respectively. A maximum spin-orbit coupling constant αzero of ∼30(×10−12 eV m) was obtained for the van der Pauw sample. In gated Hall-bar samples, a decrease in the αzero value with decreasing gate voltage (Vg) was first confirmed in a normal heterojunction. The main origin for such a large αzero, which is a few times larger than any previously reported, was found to be a structure-dependent so-called interface contribution in the Rashba term. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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