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  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 55 (1976), S. 373-374 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2298-2300 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic layers of ErP0.6As0.4 have been grown by molecular beam epitaxy on GaAs at 500 °C. The growth has been achieved by adjusting the PH3 and AsH3 flows to obtain a good lattice match to the substrate, the erbium flux remaining below the flux of the V elements. The 10–100 nm thick epitaxial layers reproducibly showed lattice mismatch below 5×10−4 and unlike the ErAs layers, they do not degrade in the atmosphere. Due to its low resistivity (ρ=80 μΩ cm), this compound is an ideal candidate for the realization of epitaxial III-V semiconductor/metal/III-V semiconductor heterostructures.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5218-5224 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polar angle distributions of core level photoemission intensities recorded on YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures are presented. They allow first the surface roughness of thin YbAs overlayers to be seen, second to estimate the tetragonal distortion of a strained ScAs film and, third, the most interesting point, to demonstrate in a direct fashion that the mixed (Yb-As) (010) planes of YbAs grow in the prolongation of the As planes of GaAs. The results are compared to those obtained by other authors with various techniques. The main advantage of the photoelectron diffraction method over the other techniques is that it can be performed on very thin epitaxial films (some monolayers) directly in situ under ultrahigh vacuum.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful growth of ErSb(001) single crystal layers on GaSb(001) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4×4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by-monolayer growth and continuity of the Sb sublattice at the ErSb/GaSb interface. The ErSb has a low room temperature resistivity equal to 30 μΩ cm but may be used as a metallic reflector only for wavelengths greater than 2.4 μm. The overgrowth of GaSb on ErSb leads to mirrorlike surfaces but the overlayers contain symmetry-related defects. On the contrary, nearly perfect GaSb overlayers were grown on [ErSb,GaSb] superlattices which exhibit metallic behavior.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4171-4175 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical properties of erbium-doped and ytterbium-doped GaAs are reported in this article. The studied samples are semi-insulating and have been grown by molecular beam epitaxy. The Yb and Er concentrations in the GaAs epitaxial layers measured by secondary ion mass spectroscopy are 2–3×1017 cm−3. The photoluminescence of Yb intra-4f shell has not been observed, while that of Er has been widely reported. Photoinduced current transient spectroscopy measurements (PICTS) reveal that the Yb doping (Er doping) creates a level in the gap with an activation energy of 0.65 eV (0.67 eV). The depth of such levels may be responsible for the absence of Yb 4f photoluminescence in GaAs:Yb. Moreover, photoconductivity experiments show the presence of rare earth related traps. The energies of these traps correspond exactly to the difference between the gap energy and the corresponding activation energy found by PICTS. These observations confirm the excitation model based on the energy transfer from recombination to the rare earth transitions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5061-5066 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-state interdiffusions at the Ni/GaSb(111) and (001) interfaces were investigated in the temperature range 200–600 °C using 1.8 MeV He+ ion backscattering and channeling and also using x-ray diffraction. The starting point was the experimental determination of the Ni-Ga-Sb phase diagram. The steps of the interaction were the same for GaSb(111) and GaSb(001). Three various phases were observed: the ternary A phase with the Ni2.5GaSb atomic composition, Ni2Ga3, and Ni2Ga0.25Sb1.75, the Ga-rich limit of the substituted NiSb binary compound. All these phases had a hexagonal pseudocubic structure. First, an epitaxial Ni2.5GaSb A phase reacted layer was obtained. This phase was not in thermodynamical equilibrium with GaSb and the final product was a mixture of Ni2Ga3 and Ni2Ga0.25Sb1.75 grains with an average atomic composition equal to Ni1.6GaSb. The metallurgical behavior of the Ni/GaSb contacts was compared to that of the Ni/GaAs and Ni/AlAs contacts. It was concluded that the experimental ternary diagram allowed a correct estimation of the sequence of phase formation in metal/compound semiconductor contact. In contrast, due to major differences in the ternary phase diagrams, the steps of the solid phase interdiffusion cannot be deduced from the results obtained on a priori equivalent contacts.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8221-8226 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1.8 MeV He+ ion backscattering and channeling was used to study various lattice matched and mismatched ScxYb1−xAs and ScyEr1−yAs films grown on GaAs (001). The lattice matching leads to excellent epitaxy with χmin as low as 1.5% along the [001] direction. It is demonstrated unambiguously that the interface peaks result from the first atoms of the Ga rows of the substrate, indicating that the As sublattice is continuous across the rare-earth monoarsenide/GaAs interface. These lattice matched heterostructures are proposed as ideal tools for studying ion channeling phenomena. Concerning the mismatched heterostructures, it is shown that the mosaic resulting from the strain relaxation, and the lattice tilt occurring for thick films can be evaluated directly from aligned spectra.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6632-6635 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful growth by molecular beam epitaxy of YbSb2 (010) single crystal films on GaSb(001) has been demonstrated. The YbSb2 films have a room temperature resistivity equal to 40 μΩ cm. YbSb2 has a basal plane rectangular (but almost square) and nearly lattice matched to GaSb. The memory of the GaSb(001) surface orientation is transferred to the YbSb2 surface films, avoiding the formation of inversion domains in the GaSb overlayers. The effects of the lattice mismatches in the basal plane and in the growth direction are discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2129-2136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid-state interactions at the Ni/(111) and (001) GaAs interfaces were investigated in the temperature range 25–600 °C by Rutherford backscattering spectrometry and channeling experiments, x-ray diffractometry, and four-point probe. The samples were prepared by depositing nickel films, 70 nm thick, onto clean (111) and (001) GaAs single-crystal substrates under 5×10−10 Torr vacuum. Then they were annealed for 1 h at increasing temperatures under a flow of forming gas (90% N2-10% H2). The sequence of phase formation was the following: first, a ternary phase at 200 °C, then a mixture of two ternary phases at 250 and 350 °C, and finally from 400 to 580 °C a mixture of a ternary phase and NiAs. This last structure was stable up to 600 °C on (111) GaAs, but at this temperature a further consumption of GaAs led to a mixture of (NiGa+NiAs) onto (001) GaAs. Small differences were observed versus the orientation of the GaAs samples but all the ternary and binary phases exhibited epitaxial arrangements with both the (111) and (001) GaAs substrates. The ternary-phase diagram for the bulk Ni-Ga-As system provides the basis for understanding the sequence of the above results and much of the information in the literature about Ni/GaAs interfacial reactions.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-state interactions of Ni thin films on (111) GaAs and (111) AlAs were investigated using transmission electron microscopy. We show that the experimental determination of the Ni-Ga-As and Ni-Al-As ternary phase diagrams, and the accurate determination of the atomic composition and crystalline structure of the various ternary solid solutions are absolutely required to understand the x-ray and electron diffraction patterns, and thus identify the compounds in the reacted layers and explain the different steps of the reactions. For this purpose, we report the results obtained on three typical samples, where hexagonal superstructured ternary phases have been observed.
    Type of Medium: Electronic Resource
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