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  • 1
    Electronic Resource
    Electronic Resource
    Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4136-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heavy-hole and light-hole excitons of a CdTe epilayer, pseudomorphically grown on an InSb epilayer by molecular beam epitaxy, are studied with a diamond anvil cell as a function of applied hydrostatic pressure via photoluminescence (PL) and photomodulated reflectivity (PR) spectroscopies. They are compared with the excitonic features in the simultaneously measured PL spectra of a sample of bulk CdTe. Under applied pressure, the lattice mismatch-induced splitting between the light-hole and heavy-hole related transitions increases in a continuous and reversible manner because of the additional pressure-induced compression due to the difference in the compressibilities of CdTe and InSb. The unusually large strain sustained by the CdTe epilayer under pressure is discussed in the light of various models. The PR signal vanishes after the InSb epilayer goes through a structural phase transition at approximately 20 kbar, while the PL signal persists until it is irreversibly quenched by the CdTe epilayer undergoing a structural phase transition at approximately 30 kbar. For pressures between 20 and 30 kbar, the behavior of the CdTe epilayer is similar to that of the bulk sample; the strain appears to have been relaxed due to the structural phase transition which has taken place in InSb. Values of the first- and second-order pressure coefficients for bulk CdTe and for the CdTe epilayer as well as values of the hydrostatic and shear deformation potentials are obtained at 14 and 80 K and compared with previously quoted values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354415
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2532-2534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346475
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  • 3
    Electronic Resource
    Electronic Resource
    Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5630-5635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparative photoluminescence and excitation spectra of ZnSe/GaAs epilayers grown by molecular beam epitaxy (MBE) and hot-wall epitaxy (HWE) show likewise features in the exciton energy regime. Two strain-split components of the free exciton are observed, as well as characteristic sets of transitions from or into ground and excited states of acceptor- and donor-bound excitons. However, all respective lines are shifted to lower energies in the HWE samples, due to the increased thermally induced strain as a consequence of the substrate temperatures being enhanced compared to the MBE growth. Whereas the dominant donors are of the same nature in both kinds of samples, specific acceptor centers are incorporated in the HWE films. Although the MBE-grown layers are of superior quality, it is shown that HWE under optimized growth conditions is a cheap and useful alternative to obtain ZnSe epilayers of reliable properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346975
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  • 4
    Electronic Resource
    Electronic Resource
    On degradation of ZnSe-based blue-green diode lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4150-4152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation mechanism of ZnMgSSe/ZnSSe/ZnCdSe separate confinement heterostructure laser diodes is studied under continuous wave and pulsed operation at room temperature. The degradation of the active quantum well is caused by formation of optically inactive areas which nucleate at paired stacking faults. These "dark defects'' are identified as areas of dislocation network and point defect segregation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359507
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6569-6573 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360477
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104762
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  • 7
    Electronic Resource
    Electronic Resource
    Low-resistivity p-type ZnSe through surface Fermi level engineering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 379-381 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-resistivity p-type ZnSe is difficult to make. This has been associated with the equilibrium thermodynamics of self-compensation of the p-type dopant by donor-like Se vacancies. We suggest that the bulk Se vacancy concentration can be vastly reduced by positioning the surface Fermi level near the conduction-band edge during the low-temperature epitaxial growth of p-doped ZnSe. This procedure is expected to minimize the equilibrium Se vacancy concentration at the surface, leading to a much lower than equilibrium Se vacancy concentration in the bulk. Experiments which could test this concept include liquid phase epitaxy growth of ZnSe from As or Li doped low work function melts such as Sn, and As doping during molecular beam epitaxy growth of ZnSe on (111)A surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104640
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  • 8
    Electronic Resource
    Electronic Resource
    Structure of the ZnSe/GaAs heteroepitaxial interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 449-451 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103662
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  • 9
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering and exciton-optical phonon coupling in CdTe/(Cd,Mn)Te quantum wells (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 667-669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering at the E0 gap from longitudinal optical phonons in CdTe/(Cd,Mn)Te multiple quantum wells has been studied near the strain split n=1 exciton ground state. A large resonance enhancement is observed with distinct incoming and outgoing channels, in agreement with luminescence excitation spectra. Phonons are observed from CdTe wells and (Cd,Mn)Te barriers, indicative of small valence-band offsets for this superlattice system. At extreme resonance, striking linewidth broadening and damping effects for the alloy phonon modes are witnessed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98328
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1272-1274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance-voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102534
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